Thin film arranged on substrate and preparation method of thin film

A substrate and thin-film technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of difficult to obtain thin films, high heating temperature, and difficult to prepare thin films, so as to improve machinability, excellent performance, and film thick and even effect

Active Publication Date: 2015-07-15
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, this method is only effective when the thermal expansion coefficients of the target substrate and the original substrate are not significantly different. When the thermal expansion coefficients of the target substrate and the original substrate are greatly different, it is difficult to prepare a thin film by heating, and the heating temperature is low, and the implanted ions are difficult. Absorb enough energy to grow into bubbles, making i

Method used

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preparation example Construction

[0038] The present invention also includes a method for preparing a thin film disposed on a substrate, comprising the following steps:

[0039] (1) Take two identical original substrates, namely the first original substrate and the second original substrate, and use ion implantation to treat the first original substrate, and implant ions into the first original substrate, so that the first original substrate is removed from the It is divided into a thin film layer, a separation layer and a residual layer from top to bottom, and the implanted ions are distributed in the separation layer; a layer of inorganic silicon material is deposited on the second original substrate to obtain the original substrate layer and a sacrificial layer; the inorganic silicon material It is one of silicon dioxide, polysilicon or silicon nitride; the ions are hydrogen ions or helium ions;

[0040] (2) Bond the first original substrate and the second original substrate processed in step (1) by wafer ...

Embodiment 1

[0059] The lithium niobate thin film arranged on the silicon substrate, the thickness of the lithium niobate thin film is 10 nanometers.

[0060] The preparation method of the lithium niobate film that is arranged on the silicon substrate comprises the following steps:

[0061] (1) Provide two original substrates of lithium niobate, which are the first original substrate and the second original substrate. The first original substrate is treated by ion implantation, and helium ions are implanted into the first original substrate. The energy of helium ion implantation is 500 keV, the dose is 5×10 16 ions / cm 2, so that the first original substrate is divided into thin film layer, separation layer and residual layer from top to bottom, implanted helium ions are distributed in the separation layer; on the second original substrate, it is deposited by plasma enhanced chemical vapor deposition (PECVD) A layer of loose silicon dioxide with a thickness of 2.2 μm, where the power is 2...

Embodiment 2

[0067] Lithium tantalate film on a silicon substrate. The thickness of lithium tantalate film is 30×10 3 Nano.

[0068] The preparation method of the lithium tantalate thin film arranged on the silicon substrate comprises the following steps:

[0069] (1) Provide two original substrates of lithium tantalate, which are the first original substrate and the second original substrate. The first original substrate is treated by ion implantation, and hydrogen ions are implanted into the first original substrate. The hydrogen ion implantation energy is 2500keV, the dose is 7×10 17 ions / cm 2 , so that the first original substrate is divided into a thin film layer, a separation layer, and a residual layer from top to bottom, and hydrogen ions are injected to distribute in the separation layer; a layer of polysilicon material with a thickness of 3 μm is deposited on the second original substrate by PECVD , where the power is 250W, the pressure is 500 mTorr, and the temperature is 25...

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Abstract

The invention discloses a thin film arranged on a substrate and a preparation method of the thin film. The thin film comprises a substrate layer and a thin film layer, wherein the thickness of the thin film layer ranges from 10*103 nanometers to 30*103 nanometers, and the thermal expansion coefficients of the base layer material and the thin film layer material are different. The preparation method includes the steps of preparing the thin film layer on the substrate of the same material, wherein a sacrificial layer is arranged between the thin film layer and the substrate of the same material; bonding the thin film layer on the target substrate, removing the sacrificial layer, and obtaining the thin film layer on the target substrate. When the expansion coefficient difference of the substrate material and the thin film material is large, the thin film layer which is uniform in film thickness and low in defect density is formed, and the thickness of the thin film reaches the nanometer grade; by means of the thin film prepared on different materials, compatibility of production processes and production lines of various materials can be achieved, semiconductor devices and thin film devices of the substrate material can be integrated, the machinable property of the thin film material is improved, and novel devices excellent in performance are produced.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and photoelectric materials, in particular to a thin film arranged on a substrate and a preparation method thereof. Background technique [0002] Lithium niobate or lithium tantalate materials are widely used in the field of optoelectronic integration due to their excellent electro-optic, acousto-optic, piezoelectric, photorefractive and good mechanical properties, such as waveguide modulators in the field of optical fiber communications, It has the advantages of small size, high performance, and low power consumption, and can also be used in the field of information storage to achieve high-density information storage. However, lithium niobate or lithium tantalate materials can only exert their performance when they are well fused with the base material. If a lithium niobate film is formed on a silicon-based film, it can be compatible with the existing production process and produ...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/78
CPCH01L21/02521H01L21/7806
Inventor 胡文胡卉
Owner JINAN JINGZHENG ELECTRONICS
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