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Rapid tunable semiconductor laser and preparation method based on reconstitution-equivalent chirp

An equivalent chirp and laser technology, applied in the field of optoelectronics, can solve the problems of slow writing speed, high cost, and increased laser cost, and achieve the effects of various coupling methods, improved tuning, and fast switching

Inactive Publication Date: 2015-07-15
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high cost of the electron beam exposure technology, the writing speed is very slow, and due to the characteristics of the electron beam itself, the accuracy of the working wavelength of the laser array produced by it is not enough, which affects the quality or cost of the laser array, thereby reducing the laser. performance, increasing the cost of the laser

Method used

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  • Rapid tunable semiconductor laser and preparation method based on reconstitution-equivalent chirp
  • Rapid tunable semiconductor laser and preparation method based on reconstitution-equivalent chirp
  • Rapid tunable semiconductor laser and preparation method based on reconstitution-equivalent chirp

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Embodiment 1

[0059] Embodiment 1. The grating of the laser and the grating design and manufacturing method based on reconstruction-equivalent chirp technology:

[0060]The DFB semiconductor laser in the present invention generally uses III-V group compound semiconductor materials, such as GaAlAs / GaAs, InGaAs / InGaP, GaAsP / InGaP, InGaAsP / InP, InGaAsP / GaAsP, AlGaInAs, etc.). At the same time, it can also be applied to various ternary compounds and quaternary compound semiconductor materials such as II-VI compound semiconductor materials and IV-VI compound semiconductor materials. In order to reduce the influence of laser end face reflection, an anti-reflection coating can be coated on both end faces. Laser of the present invention manufactures key is to do sampling grating structure, and its concrete manufacturing method is:

[0061] (1) First design and fabricate a sampling pattern based on reconstruction-equivalent chirp technology on the photolithography plate (photomask), that is, the sa...

Embodiment 2

[0063] Embodiment 2. Manufacturing method and process of fast tunable DFB semiconductor laser array matrix:

[0064] Such as figure 1 As shown, the epitaxial material of the device is described as follows: First, an N-type InP buffer layer (thickness 200nm, doping concentration of about 1.1X10 18 cm -2 ), 100nm thick amorphous doped lattice matching InGaAsP waveguide layer, strained InGaAsP multi-quantum well layer (optical fluorescence wavelength 1.52 microns, 7 quantum wells: well width 8nm, 0.5% compressive strain; barrier width 10nm, lattice matching material ), 70nm thick InGaAsP grating material layer. Then, a mask plate containing the sampling period distribution required by the equivalent grating is fabricated using common microelectronics technology. Next, the grating structure is produced by sampling mask and holographic interference exposure, and then the second epitaxial 100nm thick P-type lattice matching InGaAsP waveguide layer (the doping concentration is abo...

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Abstract

The invention discloses a rapid tunable semiconductor laser based on reconstitution-equivalent chirp. DFB lasers which are different in working wavelengths, on the basis of a reconstitution-equivalent chirp technology, are integrated on the same laser integration chip in a mixing manner of serial connection and parallel connection, so that a laser matrix structure is formed; the wavelength of each laser in the chip is fixed and conforms to the international standard; the laser matrix is provided with corresponding matrix voltage control; one of the lasers is selected to work by controlling the flow amount of the electric current and option switches of circuits; the lasers in serial connection in the laser matrix structure respectively adopt an electrical isolation area to decrease the electrical crosstalk between the two adjacent lasers, so that the independent control of the wavelength of each laser is realized; after coupled, optical signals with different wavelengths in the matrix of lasers in serial connection and in parallel connection are output from the same waveguide; the reconstitution-equivalent chirp technology is used for designing a single DFB semiconductor laser in the laser array matrix, and when a certain wavelength is needed, the corresponding DFB laser is lightened.

Description

1. Technical field [0001] The invention belongs to the field of optoelectronic technology, and is related to distributed feedback (DFB) semiconductor lasers, in particular to the design and manufacture of complex distributed feedback tunable semiconductor lasers, and more specifically, is a low-cost and fast method based on reconstruction-equivalent chirp technology. Method and device for tunable DFB semiconductor laser. 2. Background technology [0002] Modern optical communication systems are based on wavelength division multiplexing (WDM) technology, and WDM technology itself is defined from the perspective of wavelength, so wavelength itself has become one of the most important resources in optical communication systems. The development of available wavelength channel resources and how to improve the utilization efficiency of these wavelength channels has become a hot research issue. Tunable laser (TL: Tunable Laser) research has continued for nearly 30 years, as a new ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40H01S5/12
Inventor 刘胜平陈向飞郑俊守陆骏郑吉林张云山施跃春
Owner NANJING UNIV
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