Rapid tunable semiconductor laser and preparation method based on reconstitution-equivalent chirp
An equivalent chirp and laser technology, applied in the field of optoelectronics, can solve the problems of slow writing speed, high cost, and increased laser cost, and achieve the effects of various coupling methods, improved tuning, and fast switching
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Embodiment 1
[0059] Embodiment 1. The grating of the laser and the grating design and manufacturing method based on reconstruction-equivalent chirp technology:
[0060]The DFB semiconductor laser in the present invention generally uses III-V group compound semiconductor materials, such as GaAlAs / GaAs, InGaAs / InGaP, GaAsP / InGaP, InGaAsP / InP, InGaAsP / GaAsP, AlGaInAs, etc.). At the same time, it can also be applied to various ternary compounds and quaternary compound semiconductor materials such as II-VI compound semiconductor materials and IV-VI compound semiconductor materials. In order to reduce the influence of laser end face reflection, an anti-reflection coating can be coated on both end faces. Laser of the present invention manufactures key is to do sampling grating structure, and its concrete manufacturing method is:
[0061] (1) First design and fabricate a sampling pattern based on reconstruction-equivalent chirp technology on the photolithography plate (photomask), that is, the sa...
Embodiment 2
[0063] Embodiment 2. Manufacturing method and process of fast tunable DFB semiconductor laser array matrix:
[0064] Such as figure 1 As shown, the epitaxial material of the device is described as follows: First, an N-type InP buffer layer (thickness 200nm, doping concentration of about 1.1X10 18 cm -2 ), 100nm thick amorphous doped lattice matching InGaAsP waveguide layer, strained InGaAsP multi-quantum well layer (optical fluorescence wavelength 1.52 microns, 7 quantum wells: well width 8nm, 0.5% compressive strain; barrier width 10nm, lattice matching material ), 70nm thick InGaAsP grating material layer. Then, a mask plate containing the sampling period distribution required by the equivalent grating is fabricated using common microelectronics technology. Next, the grating structure is produced by sampling mask and holographic interference exposure, and then the second epitaxial 100nm thick P-type lattice matching InGaAsP waveguide layer (the doping concentration is abo...
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