Electric conduction slurry and application of electric conduction slurry in N type silicon wafer solar cells

Abstract

The invention discloses electric conduction slurry and application of the electric conduction slurry in N type silicon wafer solar cells. The electric conduction slurry is composed of, by weight, 65% to 94% of silver powder, 0.1% to 20% of second metal powder, 0.1% to 10% of doping agents, 0.6% to 12% of glass powder, 0.1% to 4% of additives and 4% to 20% of organic carriers, wherein the sum of the weight percents of all the components of the electric conduction slurry is 100%, and the eutectic point temperature of the second metal powder and silicon is smaller than the sintering temperature peak value of silicon wafers. P type transmitters of the N type silicon wafer solar cells are prepared through the electric conduction slurry, and then the N type silicon wafer solar cells are formed. The electric conduction slurry can make contact with the silicon wafers in a self-doping mode, and therefore the contact resistance is lowered, the filling factor is increased, the composition speed of minority carriers on the lower surface of the electric conduction slurry is decreased, the open-circuit voltage and the short-circuit current of the cells are improved, and therefore the conversion efficiency of the N type silicon wafer solar cells is improved.

Description

technical field [0001] The invention relates to the technical field of conductive paste and solar cells, in particular to a conductive paste and its application in N-type silicon wafer solar cells. Background technique [0002] A solar cell is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and uses renewable resources, solar cells have broad prospects for development in today's energy shortage situation. [0003] There are various types of solar cells, among which, N-type solar cells have attracted more and more attention from people in the industry because of their high conversion efficiency. The "boron-oxygen pair" of the P-type silicon substrate will cause the problem of efficiency attenuation, but the use of the N-type silicon substrate does not have this problem. Generally, the minority carrier lifetime of N-type silicon is longer, generally above 100 μ...

AI Technical Summary

Problems solved by technology

However, if the surface doping concentration of the entire emitter is too high, the recombination of minority carriers in the emitter will increase, and the photoelectric conversion efficiency will decrease.

Therefore, the effect of reducing the contact resistance cannot be achieved by simply increasing the doping concentration on the surface of the N-type silicon wafer.