Antireflection film manufacture method for raising efficiency of crystalline silicon solar cell
A technology of solar cells and anti-reflection coatings, applied in the field of solar photovoltaics, can solve the problems of high reflectivity and suboptimal passivation effect, achieve simple process, improve photoelectric conversion efficiency, and improve passivation effect
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Embodiment 1
[0024] A method for preparing an anti-reflection film for improving the efficiency of a crystalline silicon solar cell, comprising the steps of:
[0025] 1) Take 500pcs of P-type polycrystalline silicon wafers with a resistivity of 1-3Ω.cm and a specification of 156mm×156mm, and texture the silicon wafers;
[0026] 2) Diffuse the textured silicon wafer to prepare a P / N junction, etch to remove the P / N junction around the crystalline silicon wafer, and clean and remove the phosphosilicate glass;
[0027] 3) After inserting the cleaned silicon-based substrate into the graphite boat, place it in the deposition chamber of the tubular PECVD coating equipment to evacuate and raise the temperature to 400°C;
[0028] 4) When the vacuum chamber of the PECVD equipment reaches 1600mtor, CO is introduced into the vacuum chamber of the PECVD equipment 2 Gas, the power of the high-frequency power supply is set to 3500W, the high-frequency power supply is turned on, and CO with a gas flow r...
Embodiment 2
[0032] A method for preparing an anti-reflection film for improving the efficiency of a crystalline silicon solar cell, comprising the steps of:
[0033] 1) Take 500pcs of P-type polycrystalline silicon wafers with a resistivity of 1-3Ω.cm and a specification of 156mm×156mm, and texture the silicon wafers;
[0034] 2) Diffuse the textured silicon wafer to prepare a P / N junction, etch to remove the P / N junction around the crystalline silicon wafer, and clean and remove the phosphosilicate glass;
[0035] 3) After inserting the cleaned silicon-based substrate into the graphite boat, place it in the deposition chamber of the tubular PECVD coating equipment to evacuate and raise the temperature to 440°C;
[0036] 4) When the vacuum of the vacuum chamber of the PECVD equipment reaches 2600mtor, CO is introduced into the vacuum chamber of the PECVD equipment 2 Gas, the power of the high-frequency power supply is set to 6500W, the high-frequency power supply is turned on, and CO wit...
Embodiment 3
[0040] A method for preparing an anti-reflection film for improving the efficiency of a crystalline silicon solar cell, comprising the steps of:
[0041] 1) Take 500pcs of P-type polycrystalline silicon wafers with a resistivity of 1-3Ω.cm and a specification of 156mm×156mm, and texture the silicon wafers;
[0042] 2) Diffuse the textured silicon wafer to prepare a P / N junction, etch to remove the P / N junction around the crystalline silicon wafer, and clean and remove the phosphosilicate glass;
[0043] 3) After inserting the cleaned silicon-based substrate into the graphite boat, place it in the deposition chamber of the tubular PECVD coating equipment to evacuate and raise the temperature to 480°C;
[0044] 4) When the vacuum of the vacuum chamber of the PECVD equipment reaches 2000mtor, N 2 O gas, the power of the high-frequency power supply is set to 6500W, the high-frequency power supply is turned on, and the gas flow rate of 8000 sccm / min is passed into the furnace tube...
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