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Preparation method for plasma excimer enhanced quantum dot optical film

A plasma and quantum dot film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve difficult problems such as difficult to meet, achieve precise and controllable thickness, increase light field intensity, and improve overall luminous performance Effect

Active Publication Date: 2015-08-26
FUZHOU UNIVERSITY
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Problems solved by technology

For the former, currently limited by the characteristics of the quantum dot luminescent material itself, it is difficult to further increase the quantum yield of the quantum dot luminescent material, and it is necessary to find a new breakthrough
With the improvement of people's requirements for image quality and picture quality, higher requirements are put forward for quantum dot photoluminescence optical films. It is difficult to meet the needs of today's information society to produce high-quality photoluminescent optical films based on traditional semiconductor quantum dot photoluminescence optical films. Demand for high-quality, high-quality quantum dot photoluminescent optical films for displaying images

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  • Preparation method for plasma excimer enhanced quantum dot optical film
  • Preparation method for plasma excimer enhanced quantum dot optical film
  • Preparation method for plasma excimer enhanced quantum dot optical film

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preparation example Construction

[0034] The invention provides a method for preparing a plasmon-enhanced quantum dot optical film, which is realized according to the following steps:

[0035]S1: Using ITO glass as the substrate, the metal quantum dot film layer is prepared by spin-coating film forming process, and the metal quantum dot film layer is used as the plasmonic enhancement layer;

[0036] S2: preparing an organic insulating spacer layer on the ITO glass sample covered with the metal quantum dot film layer;

[0037] S3: Prepare a CdSe quantum dot film layer on the ITO glass sample covered with the metal quantum dot film layer and the organic insulating spacer layer, and compound the CdSe quantum dot film layer and the organic insulating spacer layer The film layer is used as a photoluminescent layer;

[0038] S4: preparing the plasmon-enhanced quantum dot optical film by organic spin-coating and encapsulation processes.

[0039] In this embodiment, the step S1 also includes the following steps:

...

Embodiment 1

[0064](1) Weigh 0.0207g of cadmium oxide powder, 0.112g of 1-tetradecylphosphoric acid and 2.0g of tri-n-butylphosphine oxide into a 50ml three-necked flask, first evacuate with argon for 30min, and then under argon protection Heat to 240°C until the solute is completely dissolved to form a transparent solution to prepare a cadmium precursor solution; then mix the cadmium precursor solution reactor and treat it under vacuum at 100°C for 0.5 hours, then adjust the reactor temperature to 250°C.

[0065] (2) Weigh 0.0316g of selenium powder and 1.0g of tributylphosphine into another 50ml three-necked flask, and then heat to 100°C under the protection of argon until the solute is completely dissolved to form a transparent solution to prepare the selenium precursor solution.

[0066] (3) Rapidly inject the selenium precursor solution into the cadmium precursor solution, then lower the temperature of the mixed solution to 220 °C, and keep it at this temperature for 1 min; then remove...

Embodiment 2

[0073] (1) Weigh 0.0825g of cadmium oxide powder, 0.336g of 1-tetradecylphosphoric acid and 1.5g of tri-n-butylphosphine oxide into a 50ml three-necked flask, first evacuate with argon for 80min, and then under argon protection Heat to 310°C until the solute is completely dissolved to form a transparent solution to prepare a cadmium precursor solution; then mix the cadmium precursor solution reactor and treat it under vacuum at 120°C for 2.4 hours, then adjust the reactor temperature to 315°C.

[0074] (2) Weigh 0.0948g of selenium powder and 2.5g of tributylphosphine into another 50ml three-necked flask, and then heat to 160°C under the protection of argon until the solute is completely dissolved to form a transparent solution to prepare the selenium precursor solution.

[0075] (3) Rapidly inject the selenium precursor solution into the cadmium precursor solution, then lower the temperature of the mixed solution to 250 °C, and keep it at this temperature for 15 minutes; then ...

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Abstract

The invention relates to a preparation method for a plasma excimer enhanced quantum dot optical film. A spin coating film forming process technology is utilized, and a metal quantum dot layer acts as a plasma excimer enhancement layer, an organic high-molecular compound acts as an isolation layer and a CdSe quantum dot / organic high-molecular composite film layer acts as a photoluminescence layer respectively to prepare the plasma excimer enhanced quantum dot optical film on an ITO glass substrate. The preparation method is novel, low in manufacturing cost and simple in preparation technology. Besides, the simple spin coating process technology is adopted so that thickness of each film layer in the composite film is accurate and controllable, dispersity is great, effective control of parameters like optical field intensity distribution of semiconductor quantum dots through metal quantum dots is realized by fully utilizing high-molecular compound blocking and adjusting and control of distance between the metal quantum dots and the semiconductor quantum dots, photoluminescence performance of the quantum dot optical film is effectively enhanced, and thus the preparation method has quite important application value in novel photoelectric display devices.

Description

technical field [0001] The invention relates to the field of photoelectric materials and devices, in particular to a method for preparing a plasmon-enhanced quantum dot optical film. Background technique [0002] With the development of science and technology and the progress of society, people are increasingly dependent on information exchange and delivery. As the main carrier and material basis of information exchange and transmission, display devices have become a hotspot and highland that many scientists engaged in information optoelectronic research are vying to seize. Quantum dot photoluminescent optical thin film devices, as a display device that is most likely to be practical, play a vital role in the fields of information exchange and transmission. However, as of now, quantum dot optical films basically use simple semiconductor quantum dots as the photoluminescent layer. Limited by the quantum yield of quantum dots, the luminous intensity and luminous efficiency of...

Claims

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Application Information

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IPC IPC(8): H01L21/368H01L33/44
CPCH01L21/02521H01L21/02568H01L21/02587H01L33/44
Inventor 杨尊先郭太良胡海龙周雄图严文焕刘佳慧
Owner FUZHOU UNIVERSITY
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