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A kind of preparation method of high thermal conductivity hexagonal boron nitride/polyimide composite material

A technology of hexagonal boron nitride and polyimide, which is applied in the field of composite material preparation, can solve problems such as poor compatibility, and achieve the effects of improving thermal conductivity, improving compatibility and high purity

Active Publication Date: 2018-01-30
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the compatibility between hexagonal boron nitride and polyimide matrix is ​​poor, resulting in large interface thermal resistance. Therefore, solving the compatibility problem between hexagonal boron nitride and polyimide matrix is ​​one of the effective ways to improve thermal conductivity.

Method used

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  • A kind of preparation method of high thermal conductivity hexagonal boron nitride/polyimide composite material
  • A kind of preparation method of high thermal conductivity hexagonal boron nitride/polyimide composite material
  • A kind of preparation method of high thermal conductivity hexagonal boron nitride/polyimide composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Preparation of surface modified hexagonal boron nitride

[0032] (1) After mixing 2g h-BN with 30ml concentrated nitric acid (65-68% solute mass fraction) and 90ml concentrated sulfuric acid (95-95% solute mass fraction), ultrasonically disperse at room temperature for 2h, then react in a water bath at 70°C After 72h, the product was washed with water to neutrality after the reaction was completed, and the pretreated hexagonal boron nitride product was obtained after drying, which was recorded as BN-1. After drying in an oven, an infrared test was carried out, as shown in figure 1 shown.

[0033](2) Put the activated 4A molecular sieve into N,N-dimethylacetamide for 24h, then distill under reduced pressure, collect fractions at about 75°C to obtain anhydrous N,N-dimethylacetamide.

[0034] (3) Add 1g of BN-1 to a 250ml three-necked flask, add 100ml of N,N-dimethylacetamide solvent treated in step (2) under nitrogen protection, and stir ultrasonically for 2 hours, so...

Embodiment 2

[0041] 1. Preparation of surface modified hexagonal boron nitride

[0042] (1) After mixing 2g h-BN with 30ml concentrated nitric acid (65-68% solute mass fraction) and 90ml concentrated sulfuric acid (95-95% solute mass fraction), ultrasonically disperse at room temperature for 2h, then react in a water bath at 70°C After 72 hours, after the reaction, the product was washed with water until neutral, and dried to obtain a pretreated hexagonal boron nitride product, which was designated as BN-1.

[0043] (2) Put the activated 4A molecular sieve into N,N-dimethylacetamide for 24h, then distill under reduced pressure, collect fractions at about 75°C to obtain anhydrous N,N-dimethylacetamide.

[0044] (3) Add 1g of BN-1 to a 250ml three-necked flask, add 100ml of N,N-dimethylacetamide solvent treated in step (2) under nitrogen protection, and stir ultrasonically for 2 hours, so that the hexagonal boron nitride is evenly dispersed in N,N-dimethylacetamide solvent.

[0045] (4) Un...

Embodiment 3

[0049] 1. Preparation of surface modified hexagonal boron nitride

[0050] (1) After mixing 2g h-BN with 30ml concentrated nitric acid (65-68% solute mass fraction) and 90ml concentrated sulfuric acid (95-95% solute mass fraction), ultrasonically disperse at room temperature for 2h, then react in a water bath at 70°C After 72 hours, after the reaction, the product was washed with water until neutral, and dried to obtain a pretreated hexagonal boron nitride product, which was designated as BN-1.

[0051] (2) Put the activated 4A molecular sieve into N,N-dimethylacetamide for 24h, then distill under reduced pressure, collect fractions at about 75°C to obtain anhydrous N,N-dimethylacetamide.

[0052] (3) Add 1.5g of BN-1 to a 250ml three-necked flask, add 150ml of N,N-dimethylacetamide solvent treated in step (2) under nitrogen protection, and stir ultrasonically for 2h, so that the hexagonal boron nitride is uniformly Dispersed in N,N-dimethylacetamide solvent.

[0053] (4) Un...

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Abstract

The invention is a method for preparing a high thermal conductivity hexagonal boron nitride / polyimide composite material, the method comprising the following steps: the first step: mixing h-BN with mixed acid, reacting in a water bath, washing the product until neutral, drying; second step: add solvent, ultrasonically disperse, then add dibasic isocyanate, stir and reflux for 24 hours; third step: add aromatic diamine, continue to stir and reflux for 24 hours; fourth step: place the aminated hexagonal boron nitride In the reactor, add a solvent, then stir and ultrasonically; then add aromatic diamine, and add aromatic dianhydride equal to the molarity of the aromatic diamine to prepare a polyamic acid solution, and apply the polyamic acid solution on a glass plate, heat sub- Aminated to prepare hexagonal boron nitride / polyimide composite film. The invention improves the interaction force between the hexagonal boron nitride and the polyimide, achieves the purpose of improving the dispersibility of the filler and the compatibility with the matrix, is simple and easy to implement, and has low requirements on equipment.

Description

technical field [0001] The invention belongs to the field of composite material preparation, and relates to surface modification of hexagonal boron nitride and a preparation method of polyimide composite material. Background technique [0002] As a member of electronic packaging materials and electrical insulation materials, polyimide (Polyimide, PI) is widely used in microelectronics and aerospace due to its excellent thermal stability, mechanical properties and low dielectric constant. field. However, traditional PI also has some defects that limit its application, such as poor thermal conductivity, and when it is used as an electronic packaging material, it cannot dissipate heat in time, which affects the service life of the device. Therefore, in the case of ensuring the excellent comprehensive performance of PI itself, improving the thermal conductivity of PI has aroused extensive interest in the fields of academic and engineering research. [0003] Thermally conductiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08L79/08C08K9/02C08K3/38C08G73/10
Inventor 于晓燕杨曦马伟佳单书燕
Owner HEBEI UNIV OF TECH
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