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Preparation and application of insulating core shell composite structure high in heat conduction and high in reflectivity

A high reflectivity, composite structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the luminous efficiency of the chip, affecting the heat dissipation efficiency of the device, and deteriorating the reliability of the light source, achieving excellent insulation and low cost. , The effect of improving heat dissipation efficiency

Inactive Publication Date: 2015-09-09
EAST CHINA NORMAL UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Al with high reflectivity in visible light 400-700nm 2 o 3 、TiO 2 , ZnO and other oxides have low thermal conductivity, which affects the overall heat dissipation efficiency of the device, reduces the luminous efficiency of the chip, makes the reliability of the light source worse, and shortens the service life

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Weigh 10 g of 6-8um AlN powder, use a satellite ball mill to disperse by high-speed ball milling, and disperse the ball-milled AlN powder in an ethanol solution for ultrasonic cleaning for 5-10 hours. Weigh 13ml of butyl titanate and dissolve it in 27ml of ethanol solution as a precursor, stir magnetically for 30 minutes, add the pretreated AlN powder to the above solution, and disperse it ultrasonically for 1 hour; then take a certain amount of deionized water and 5ml Acetic acid is dissolved in ethanol solution to make the solution acidic. After magnetic stirring for 20 minutes, it is added dropwise to the above-mentioned butyl titanate solution while stirring, and stirred for 4-5 hours to form TiO containing AlN. 2 The sol, after the reaction is completed, is placed in an oven for drying at 60-100°C, and the dried composite material is calcined at 500-900°C for 5-6 hours. Prepare a mixed solution of deionized water and ethanol at a volume ratio of 1:5, disperse the c...

Embodiment 2

[0043]Weigh 10 g of 500nm-4um diamond powder, use a satellite ball mill to disperse by high-speed ball milling, and disperse the ball-milled diamond powder in an ethanol solution for ultrasonic cleaning for 5-10 hours. Weigh 15g of aluminum nitrate (nine water) and dissolve it in 45ml of aqueous solution as a precursor, stir it magnetically for 30 minutes, add the pretreated diamond powder to the above solution, and disperse it ultrasonically for 1 hour; then take 4-12 ml of concentrated ammonia water, Add it dropwise to the above aluminum nitrate solution while stirring, and add 0.4-1.2ml concentrated nitric acid at the same time to promote the reaction. Stir for 3-5 hours to form a boehmite sol containing diamond. After the reaction is completed, put it in an oven for 85- drying at 100°C, and calcining the dried composite at 500-900°C for 5-6 hours. Prepare SiO by step in example 1 2 thin film layer to obtain diamond Al 2 o 3 SiO 2 The multi-layer edge core-shell composi...

Embodiment 3

[0045] Weigh 10 g of 500nm-1um BN powder, use a satellite ball mill to disperse by high-speed ball milling, and disperse the ball-milled BN powder in an ethanol solution for ultrasonic cleaning for 5-10 hours. Weigh 17-22 g of zinc acetate (dihydrate) and dissolve it in ethanol solution as a precursor, stir it magnetically for 30 minutes, add the pretreated BN powder into the above solution, and disperse it ultrasonically for 1 hour; then take 4-5 ml The diethanolamine is dissolved in the ethanol solution, and is added dropwise to the above-mentioned zinc acetate solution while stirring, and deionized water is added to slow down the reaction rate, and stirred for 4-5 hours to form a ZnO sol containing BN. After the reaction is completed, put it in an oven Dry at 60-100°C, and calcinate the dried composite at 500-900°C for 5-6 hours. Prepare SiO by step in example 1 2 thin film layer to obtain BNZnOSiO 2 The multilayer edge core-shell composite structure, in which the BN cont...

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Abstract

The invention relates to the preparation field of insulating core shell composite structures, and concretely relates to preparation and applications of insulating core shell composite structures high in heat conduction and high in reflectivity. Compared with insulating core shell composite structures produced by the prior art, nano to micron insulating core shell composite structures prepared are high in heat conduction and high in reflectivity, and exhibit excellent insulating properties. Meanwhile, the insulating core shell composite structures can disperse steady in silica gel. An adopted synthesis process is environment-friendly, simple, and low in cost. Furthermore, a one-step packaging method is provided to enable LED chip packaging to be realized while highly reflective film layers can be printed. Module packaging steps are simplified, and the heat dissipation efficiency of devices is improved.

Description

technical field [0001] The invention relates to the field of preparation of an insulating core-shell composite structure, in particular to the preparation and application of an insulating core-shell composite structure with high thermal conductivity and high reflectivity. Background technique [0002] Light-emitting diode is a kind of semiconductor lighting with the advantages of energy saving, green environmental protection, long life, small size, high brightness, etc. It is regarded as the mainstream technology that may replace incandescent lamps and fluorescent lamps and become general lighting. [0003] At present, due to the limited luminous flux based on the single-chip packaging mode, for practical lighting applications, multiple LEDs need to be integrated. However, after the in-line LED is integrated, the glare makes people feel uncomfortable. Therefore, multi-chips are generally connected in series or in parallel to adhere or weld on the aluminum substrate to make a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64H01L33/60H01L33/52H01L33/48H01L33/00
CPCH01L33/005H01L33/48H01L33/483H01L33/52H01L33/60H01L33/641H01L2933/005H01L2933/0058H01L2933/0075
Inventor 蒋婷婷陆婷孙卓张哲娟
Owner EAST CHINA NORMAL UNIV
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