Method for preparing nano graphene powder by plasma chemical vapor synthesis

A nano-graphene, chemical vapor-phase technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of graphene with large structural defects, inability to produce large areas, and low production efficiency. Achieve the effect of low cost, less layers and less impurity content

Inactive Publication Date: 2015-10-07
HEFEI KAIER NANOMETER ENERGY & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the first two stripping methods have low production efficiency; the chemical vapor deposition method and the crystal epitaxial growth method are high in cost, complicated in operation and unable to produce large-area graphene; and although the redox method is low in cost and simple in process, the prepared graphene Large structural defects and high impurity content

Method used

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  • Method for preparing nano graphene powder by plasma chemical vapor synthesis
  • Method for preparing nano graphene powder by plasma chemical vapor synthesis
  • Method for preparing nano graphene powder by plasma chemical vapor synthesis

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1. Remove impurities from methane to make it more than 98% pure to ensure the purity of graphene;

[0036] 2. Turn on the power supply of the plasma generator, the operating voltage of the plasma generator is 280V, the load current is 190A, and the plasma arc is generated in the reaction chamber under the ionization action of the positive electrode 4 of the plasma generator and the negative electrode 5 of the plasma generator.

[0037] 3. Open the top blowing nitrogen delivery pipe 2, and set the nitrogen partial pressure to 0.5MPa.

[0038] 4. Raise the temperature of the plasma arc to 3000°C, and at this time, the temperature in the reaction furnace reaches 900°C.

[0039] 5. Open the methane feeding pipe 1, set the methane partial pressure to 0.8MPa, let the methane gas enter the reaction furnace 3, and the methane begins to ionize into carbon atoms and hydrogen atoms and rearrange them.

[0040] 6. After 10 minutes, turn off the power of the plasma generator, and c...

Embodiment 2

[0044] 1. Remove impurities from methane to make it more than 98% pure to ensure the purity of graphene;

[0045] 2. Turn on the power supply of the plasma generator, the operating voltage of the plasma generator is 300V, the load current is 200A, and the plasma arc starts to be generated in the reaction chamber under the ionization action of the positive pole 4 of the plasma generator and the negative pole 5 of the plasma generator.

[0046] 3. Open the top blowing nitrogen delivery pipe 2, and set the nitrogen partial pressure to 0.6MPa.

[0047] 4. Raise the temperature of the plasma arc to 3000°C, and at this time, the temperature in the reaction furnace reaches 900°C.

[0048] 5. Open the methane feeding pipe 1, set the methane partial pressure to 0.9MPa, let the methane gas enter the reaction furnace 3, and the methane begins to ionize into carbon atoms and hydrogen atoms and rearrange them.

[0049] 6. After 10 minutes, turn off the power of the plasma generator, and c...

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Abstract

The invention discloses a method for preparing nano graphene powder by plasma chemical vapor synthesis, which comprises the following steps: by using nitrogen as a working medium, the raw material methane is ionized into carbon ions and hydrogen ions under the ionization action of plasma arc, wherein the carbon ions are rearranged into a network in the reactor to generate complete-structure graphene powder, the hydrogen ions are combined into hydrogen gas to be discharged, and the graphene powder is led by the air flow to enter a powder collector. The graphene prepared by the method has the advantages of lower layer number (2-10), complete structure, large single-layer diameter, low oxygen content, no sulfur and low metal impurity content, and can implement continuous industrialized production.

Description

1. Technical field [0001] The present invention relates to a kind of preparation method of nano-graphene powder, specifically a kind of method for preparing nano-graphene powder by plasma chemical vapor phase synthesis method, the number of graphene layers prepared by this method is few (2-10 layers), The structure is complete, the diameter of the single layer is large, the content of oxygen is low, the content of sulfur is low, the content of metal impurities is low, and continuous industrial production can be realized, which belongs to the field of chemical technology. 2. Background technology [0002] Graphene is a two-dimensional material composed of a single layer of carbon atoms. Since its discovery in 2004, it has continuously demonstrated its excellent properties to the world. Graphene is favored because of its excellent light transmittance, huge thermal conductivity, and extremely low resistivity, and is known as the next-generation material that triggers the indust...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04B82Y30/00
CPCB82Y30/00
Inventor 张芬红
Owner HEFEI KAIER NANOMETER ENERGY & TECH
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