A two-dimensional nano snse 2 Preparation method of crystal material

Abstract

The invention discloses a preparation method of a two-dimensional nano SnSe2 crystal material, which can deposit a SnSe2 crystal with required thickness on a substrate by using a simple substance selenium and tin halide by a chemical vapor deposition process, wherein the deposition equipment is a horizontal tube furnace which is sequentially provided with an upstream low-temperature region, a central temperature region and a downstream low-temperature region, the simple substance selenium and tin halide are respectively independently and closely arranged in the upstream low-temperature region, and the substrate is arranged in the downstream low-temperature region; by utilizing the temperature difference of different temperature regions, the simple substance selenium steam and tin halide steam are formed on the upstream low-temperature region; and the simple substance selenium steam and tin halide steam react to generate SnSe2, and the SnSe2 is taken into the downstream temperature region through a deposition carrier gas and deposits on the substrate to obtain the two-dimensional nano SnSe2 crystal material. The method can be utilized to prepare the two-dimensional nano SnSe2 crystal material with uniform thickness and consistent shape, and the two-dimensional nano SnSe2 crystal material is 3-10 atomic layers thick (1-3 layers of SnSe2) and has wide application prospects in electronic devices.

Description

technical field [0001] The invention belongs to the field of nano-semiconductor materials, and more specifically relates to a two-dimensional nano-SnSe 2 Preparation method of crystalline material. Background technique [0002] The discovery of graphene has greatly promoted the study of two-dimensional materials, which can have very different fundamental properties with a thickness of only a few atoms (Science 2004, 306, 666-669). Many researchers have since exploited the substance's many applications, from making bendable screens to energy storage. However, the graphene band gap is zero, and the transistor made of graphene cannot be turned off, which limits its application in optoelectronic devices and digital electronic devices to some extent (Nature Photonics 2013, 7, 888-891). For this field, the ideal material is a semiconductor. Although there are many methods for modifying graphene to make the bandgap adjustable, they all encounter the problems of complex process a...

AI Technical Summary

Problems solved by technology

Bottom-up synthesis methods, such as hydrothermal synthesis, can obtain the two-dimensional structure of molybdenum disulfide, but also because of the liquid environment, the size of the product is small and the properties change

Another bottom-up method is vapor deposition technology, which has obtained two-dimensional nanocrystalline materials with a thickness of several atomic layers in some materials (such as molybdenum disulfide and tungsten diselenide) (Nature nanotechnology 2012, 7, 699-712) , but the growth process requires extremely high temperature to evaporate the precursor, and the energy consumption is high

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