A method for preparing a monocrystalline silicon wafer maskless reactive ion etching textured surface

Abstract

The present invention discloses a single-crystal silicon wafer maskless reactive ion etching suede preparation method. The process gas applied by the preparation method comprises a gas mixture of CF4, O2, and SF6. The method comprises the following specific steps: in the etching process of a single-crystal silicon wafer completed in a reaction chamber, firstly placing the single-crystal silicon wafer that needs to be etched in the reaction chamber; then after the CF4, O2 and SF6 are mixed according to the ratio required by etching, filing the mixture gas into the reaction chamber according to the speed and pressure required by the etching, and meanwhile ionizing the CF4, O2 and SF6 filled into the reaction chamber into plasma through a radio-frequency power source ARF in the reaction chamber, and accelerating the plasma through a radio-frequency power source BRF in the reaction chamber; and finally etching the single-crystal silicon wafer through the plasma. The single-crystal silicon wafer maskless reactive ion etching suede preparation method provided by the present invention has the advantages that the mixture gas used in the method is reasonable in proportioning and high in production and preparation efficiency, the photoelectric conversion efficiency of solar cells is improved, and the process is simple.

Description

technical field [0001] The invention relates to a monocrystalline silicon etching method, in particular to a method for preparing a monocrystalline silicon wafer without a mask reactive ion etching suede. Background technique [0002] At present, in order to overcome the randomness brought by wet chemical etching to prepare the textured surface, there are attempts to prepare the textured surface by mask reactive ion etching, but the method of mask reactive ion etching is complicated in process and high in cost. Not suitable for mass production. [0003] The invention patent with the patent number 200910181549.4 mentions a method of reducing the surface reflectivity of textured monocrystalline silicon wafers. The monocrystalline silicon wafers with textured surfaces made by alkali etching are put into plasma etching equipment for maskless processing. plasma etching, thereby further reducing the surface reflectivity of monocrystalline silicon wafers; the method for reducing t...

AI Technical Summary

Problems solved by technology

[0002] At present, in order to overcome the randomness brought by wet chemical etching to prepare the textured surface, there are attempts to prepare the textured surface by mask reactive ion etching, but the method of mask reactive ion etching is complicated in process and high in cost. not suitable for mass production

[0003] Invention patent No. 200910181549.4 mentions a method of reducing the surface reflectivity of textured monocrystalline silicon wafers, which involves making the textured monocrystalline silicon Crystalline silicon wafers are put into plasma etching equipment for maskless plasma etching, thereby further reducing the surface reflectivity of single crystal silicon wafers; the method for reducing the surface reflectivity of textured single crystal silicon wafers in the above patents is being implemented The process has the following disadvantages: the mixed gas described in the patent is not the most effective ratio; and the plasma is not accelerated, and the production efficiency is not high; the method described in the patent requires the previous process to provide Monocrystalline silicon wafers prepared by wet chemical etching, the process is relatively cumbersome