A low-temperature preparation of α‑al 2 o 3 coating method
A double-glow plasma infiltration and coating technology, which is applied in the direction of metal material coating process, coating, ion implantation plating, etc., can solve problems such as adverse effects on adhesion, impact on structure and performance, and substrate damage, and achieve corrosion resistance And anti-oxidation and other performance improvement, no holes, the effect of smooth and dense surface
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022] (1) 10 wt% Y, 10 wt% α-Al 2 o 3 Seed crystals and 80 wt% Al powder were uniformly ball-milled and mixed on a planetary ball mill, pressed into discs on a small cold press, and then sintered in a vacuum hot-press furnace to obtain Al / Y / α-Al 2 o 3 target;
[0023] (2) Preparation of doped α-Al on the surface of 316L stainless steel by double glow plasma metallization technology 2 o 3 Al coating of seed crystal and rare earth element Y. The experimental parameters are: vacuum degree, 2×10 -4 Pa; source voltage, -700 V, substrate voltage, -300 V, electrode spacing, 15 mm; air pressure, 30 Pa; sputtering time, 3h; sputtering temperature, 580 o C;
[0024] (3) Plasma oxidation is used to prepare Y and α-Al 2 o 3 The seeded co-doped Al coating is heat-treated. The oxidation temperature is 580 o C, the argon gas flow rate is 40 sccm, the air pressure is 40 Pa, and the oxidation time is 1 h. By changing the oxygen flow rate of the single factor, a coating meeting the ...
Embodiment 2
[0026] (1) 10 wt% Y, 10 wt% α-Al 2 o 3 Seed crystals and 80 wt% Al powder were uniformly ball-milled and mixed on a planetary ball mill, pressed into discs on a small cold press, and then sintered in a vacuum hot-press furnace to obtain Al / Y / α-Al 2 o 3 target;
[0027] (2) Preparation of doped α-Al on the surface of 316L stainless steel by double glow plasma metallization technology 2 o 3 Al coating of seed crystal and rare earth element Y. The experimental parameters are: vacuum degree, 2×10 -4 Pa; source voltage, -700 V, substrate voltage, -300 V, electrode spacing, 15 mm; air pressure, 30 Pa; sputtering time, 3h; sputtering temperature, 580 o C;
[0028] (3) Plasma oxidation is used to prepare Y and α-Al 2 o 3 The seeded co-doped Al coating is heat-treated. The oxidation temperature is 580 o C. The argon gas flow rate is 40 sccm, the air pressure is 40 Pa, and the oxidation time is 1 h. By changing the oxygen flow rate of the single factor, a coating meeting the ...
Embodiment 3
[0030] (1) 10 wt% Y, 10 wt% α-Al 2 o 3 Seed crystals and 80 wt% Al powder were uniformly ball-milled and mixed on a planetary ball mill, pressed into discs on a small cold press, and then sintered in a vacuum hot-press furnace to obtain Al / Y / α-Al 2 o 3 target;
[0031] (2) Preparation of doped α-Al on the surface of 316L stainless steel by double glow plasma metallization technology 2 o 3 Al coating of seed crystal and rare earth element Y. The experimental parameters are: vacuum degree, 2×10 -4 Pa; source voltage, -700 V, substrate voltage, -300 V, electrode spacing, 15 mm; air pressure, 30 Pa; sputtering time, 3h; sputtering temperature, 580 o C;
[0032] (3) Plasma oxidation is used to prepare Y and α-Al 2 o 3 The seeded co-doped Al coating is heat-treated. The oxidation temperature is 580 o C. The argon gas flow rate is 40 sccm, the air pressure is 40 Pa, and the oxidation time is 1 h. By changing the oxygen flow rate of the single factor, a coating meeting the ...
PUM
Property | Measurement | Unit |
---|---|---|
electric potential / voltage | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com