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A method for preparing inas nanowires with specific morphology and crystal structure

A technology of crystal structure and nanowires, which is applied in the field of semiconductor material preparation, can solve the problems of many accidental factors, low repetition rate, difficulty in mass production of nanowires, etc., and achieve the effect of low cost

Inactive Publication Date: 2018-06-22
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the MOVPE method often uses highly toxic AsH3 gas as the arsenic source, and special metal organic compounds as the indium source, which poses a high risk to personnel and the environment, and has high requirements for the preparation process, making it difficult to achieve mass production of nanowires.
However, in the process of preparing InAs nanowires by CVD, the growth of nanowires has very strict requirements on the reaction environment, and the shape, diameter, growth direction, crystallinity, crystal structure, etc. of nanowires are greatly dependent on environmental factors. Because there are many environmental parameters that can be adjusted in this method, such as temperature, substrate, catalyst, chamber pressure, carrier gas flow, etc., there are many accidental factors in the process of nanowire preparation, and it is difficult to achieve accurate Controlled growth of nanowires with specific morphology and crystal structure, so the CVD method has poor controllability and low repetition rate

Method used

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  • A method for preparing inas nanowires with specific morphology and crystal structure
  • A method for preparing inas nanowires with specific morphology and crystal structure
  • A method for preparing inas nanowires with specific morphology and crystal structure

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Embodiment 1

[0031] The preparation method of Type 1 InAs nanowires, the specific operation steps are:

[0032] 1) The cut silicon (100) substrate was sonicated in acetone, absolute ethanol and deionized water for 5 minutes, and then dried with nitrogen. Use a disposable dropper to suck the gold aqueous solution and drop it on the silicon wafer, and slowly dry it with nitrogen.

[0033] 2) Weigh 200 mg of InAs powder into a small quartz boat, and place the substrate in a large quartz boat. Place the small quartz boat in the central area of ​​the rapid heating tube sintering furnace, and place the large quartz boat in the downstream area 16 cm from the central area, and then seal the reaction furnace.

[0034] 3) Turn on the mechanical pump to pump the vacuum in the furnace to 3×10 -4 Torr, then filled with argon to one atmosphere, and then evacuated. Cycle the scrubbing process three times. Finally, slowly fill in hydrogen, and keep the hydrogen flow rate at 50 sccm, and maintain the vacuum in...

Embodiment 2

[0039] The specific operation steps of the preparation method of Type 2 InAs nanowires are:

[0040] 1) The cut silicon (111) substrate is sonicated in acetone, absolute ethanol and deionized water for 5 minutes, and then dried with nitrogen. Use a disposable dropper to suck the gold aqueous solution and drop it on the silicon wafer, and slowly dry it with nitrogen.

[0041] 2) Weigh a quantitative amount of InAs powder into a small quartz boat, and place the substrate in a large quartz boat. Place the small quartz boat in the central area of ​​the rapid heating tube sintering furnace, and place the large quartz boat in the downstream area 16 cm from the central area, and then seal the reaction furnace.

[0042] 3) Turn on the mechanical pump to pump the vacuum in the furnace to 3×10 -4 Torr, then filled with argon to one atmosphere, and then evacuated. Cycle the scrubbing process three times. Finally, add hydrogen slowly, and keep the hydrogen flow rate at 200 sccm, and maintain ...

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Abstract

The invention discloses a method for preparing InAs nanowires with specific morphology and crystal structure. According to the invention, through adjusting carrier gas flow rate, the morphology and crystal structure of the nanowires can be effectively controlled. The method provides a reference for realizing low-cost and high-efficiency InAs nanowire growth, and provides partial guidance in the aspect of CVD nanowire growth controllability. Also, the invention has important significance to further learning and researches of the nucleation and growth mechanism of twin crystal superlattice nanowires.

Description

Technical field [0001] The invention relates to a method for preparing InAs nanowires, in particular to the controllable preparation of InAs nanowires with specific morphology and crystal structure by using a chemical vapor deposition method, and belongs to the technical field of semiconductor material preparation. Background technique [0002] With the development of the semiconductor industry, nanomaterials have long received extensive attention from the scientific field and all walks of life due to their special properties and wide range of uses. III-V semiconductor nanowires have great application value in nanoelectronic devices, nanophotonic devices, quantum devices, biological sensing and detection, nanophysics and chemistry due to their superior electrical and optical properties. As an important III-V nanowire, InAs nanowires have the characteristics of narrow direct band gap, high electron mobility, low effective mass, and large exciton Bohr radius, etc., and they have al...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B29/62C30B25/00
Inventor 李明王晶云李侃邢英杰徐洪起
Owner PEKING UNIV