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Micro-arc discharge micro-cutting device and cutting method for sic single wafer

A technology of micro-arc discharge and cutting method, which is applied in the field of micro-arc discharge micro-cutting and micro-arc discharge micro-cutting device, can solve the problems of surface roughness of SiC single wafer warping deformation, save precious hard and brittle materials, reduce surface roughness, etc. Roughness, TTV reduction effect

Inactive Publication Date: 2016-10-05
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to provide a method for micro-arc discharge micro-cutting of SiC single wafers, which solves the problem that the SiC single wafers cut in the prior art will be warped and deformed and have high surface roughness

Method used

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  • Micro-arc discharge micro-cutting device and cutting method for sic single wafer
  • Micro-arc discharge micro-cutting device and cutting method for sic single wafer
  • Micro-arc discharge micro-cutting device and cutting method for sic single wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Step 1, moving the machine tool table to a position where the distance between the SiC single crystal rod 24 and the wire saw 10 is 100 microns;

[0048] Step 2. Fill the electrolyte tank 17 with an alkaline electrolyte whose pH value is 7. Make the alkaline electrolyte pass through the conduit 11 and spray it from the nozzle to the top of the cutting place where the wire saw 10 and the SiC single crystal rod 24 are located; make the rotating shaft drive the SiC single crystal rod 24 to rotate, and open the pulse power supply box 14, and the pulse current Under the action of an electric field, the alkaline electrolyte between the SiC single crystal rod 24 and the wire saw 10 undergoes electrolysis to generate oxygen and form an oxygen film; the voltage of the pulse power box 14 is 0-700V, the voltage pulse width is 6μs-18μs, and the peak value The current is 0-500A, and the current pulse width is 1000μs-3000μs.

[0049] Step 3. Adjust the pulse power supply box 14 so t...

Embodiment 2

[0051] Step 1. Move the machine tool table to a position where the distance between the SiC single crystal rod 24 and the wire saw 10 is 125 microns;

[0052] Step 2. Fill the electrolyte tank 17 with an alkaline electrolyte whose pH value is 8. Make the alkaline electrolyte pass through the conduit 11 and spray it from the nozzle to the top of the cutting place where the wire saw 10 and the SiC single crystal rod 24 are located; make the rotating shaft drive the SiC single crystal rod 24 to rotate, and open the pulse power supply box 14, and the pulse current Under the action of an electric field, the alkaline electrolyte between the SiC single crystal rod 24 and the wire saw 10 undergoes electrolysis to generate oxygen and form an oxygen film; the voltage of the pulse power box 14 is 0-700V, the voltage pulse width is 6μs-18μs, and the peak value The current is 0-500A, and the current pulse width is 1000μs-3000μs.

[0053] Step 3. Adjust the pulse power supply box 14 so tha...

Embodiment 3

[0055] Step 1. Move the machine tool table to a position where the distance between the SiC single crystal rod 24 and the wire saw 10 is 150 microns;

[0056] Step 2. Fill the electrolyte tank 17 with an alkaline electrolyte whose pH value is 9. Make the alkaline electrolyte pass through the conduit 11 and spray it from the nozzle to the top of the cutting place where the wire saw 10 and the SiC single crystal rod 24 are located; make the rotating shaft drive the SiC single crystal rod 24 to rotate, and open the pulse power supply box 14, and the pulse current Under the action of an electric field, the alkaline electrolyte between the SiC single crystal rod 24 and the wire saw 10 undergoes electrolysis to generate oxygen and form an oxygen film; the voltage of the pulse power box 14 is 0-700V, the voltage pulse width is 6μs-18μs, and the peak value The current is 0-500A, and the current pulse width is 1000μs-3000μs.

[0057] Step 3. Adjust the pulse power supply box 14 so tha...

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Abstract

The invention discloses a micro-arc discharge micro-cutting device for a SiC single wafer, comprising a bed, a conduit and a pulse power supply box, a wire saw system and a machine tool workbench are installed on the bed, a SiC single crystal rod is installed on the machine tool workbench, and one end of the conduit The hydraulic pump is connected to the electrolyte tank, and the other end of the conduit is located above the cutting point of the SiC single crystal rod and the wire saw system; the positive pole of the pulse power supply box is connected to one end of the SiC single crystal rod, and the negative pole of the pulse power supply box is connected to the wire saw system The jigsaw in it is connected. The invention also discloses a micro-arc discharge micro-cutting method for SiC single wafer. The invention shortens the cutting time of the SiC single wafer through the electrical discharge machining method of the micro-arc discharge body, improves the material removal rate, reduces the surface roughness and TTV of the wafer, reduces the wear of the wire saw, and saves precious hard and brittle materials.

Description

technical field [0001] The invention belongs to the technical field of non-good conductor processing methods, and in particular relates to a micro-arc discharge micro-cutting device for SiC single wafers, and also relates to a micro-arc discharge micro-cutting method for SiC single wafers. Background technique [0002] With the development of technology, SiC, as a third-generation semiconductor material, is more and more widely used in power devices and IC industries. After the breakthrough of its large-diameter growth process, its wafer manufacturing process has become the focus of attention. Due to high hardness and brittleness, the cutting, grinding and polishing of SiC single wafers become the bottleneck of the device manufacturing process, especially the cutting process, which accounts for about 50% of the entire wafer manufacturing workload. The quality of the wafer surface after dicing has an important impact on the subsequent grinding and polishing work and the serv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/00
Inventor 李淑娟麻高领梁列蒋百灵
Owner XIAN UNIV OF TECH