A kind of preparation method of copper indium gallium sulfide selenide film material
A technology of copper indium gallium sulfide selenide and thin film materials, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of difficult control of composition, poor uniformity, unfavorable impurities, etc., and achieve volume expansion Small size, low equipment requirements, high equipment requirements
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0032] Prefabricated layer preparation working conditions: on Mo-coated soda-lime glass, using In target and CuGa target as sputtering targets, using radio frequency sputtering, the power is 30W and 50W respectively, using Ar gas and H 2 The mixed gas composed of S is the working gas, the pressure of the working gas in the sputtering furnace is 0.8Pa, the substrate temperature is 25°C, the sputtering time is 30min, Ar gas and H 2 The flow rates of S are 30mL / min and 10mL / min respectively, the distance from the target to the substrate is 10cm, and the prepared prefabricated layer is CuIn 0.76 Ga 0.32 S 2.18 . ,
[0033] Process parameters of the post-selenization process: use solid Se as the selenium source, use argon as the working gas, heat the solid Se to 400°C at a heating rate of 0.2°C / s to obtain a gaseous selenium source at 400°C, and put CuIn 0.76 Ga 0.32 S 2.18 After the prefabricated layer is heated to 500°C (the heating rate is 0.2°C / s), a gaseous selenium sour...
Embodiment 2
[0039] Prefabricated layer preparation working conditions: on Mo-plated stainless steel, using CuInGa target, CuInGaS 2 Target double target sputtering, using intermediate frequency sputtering, the power is 80W, 100W respectively, with Ar gas and H 2 The mixed gas composed of S is the working gas, the pressure of the working gas in the sputtering furnace is 1.6Pa, the substrate temperature is controlled at 200°C, the sputtering time is controlled at 15min, and Ar gas and H 2 The flow rates of S are 20mL / min and 30mL / min respectively, the distance from the target to the substrate is controlled to be 12cm, and the prepared prefabricated layer is CuIn 0.94 Ga 0.24 S 2.38 .
[0040] Process parameters of the post-selenization process: use solid Se as the selenium source, use argon as the working gas, raise the temperature of the solid Se to 450°C at a heating rate of 0.5°C / s to obtain a gaseous selenium source at 450°C, and put CuIn 0.94 Ga 0.24 S 2.38 After the prefabricate...
Embodiment 3
[0042] Prefabricated layer preparation working conditions: on the FTO Mo plating substrate, use CuIn target, CuGa target, CuInS 2 The target is a sputtering target, using radio frequency sputtering, the sputtering power is 40W, 40W and 60W, the substrate temperature is 300°C, and the sputtering time is 60min. 2 The mixed gas composed of S is the working gas, the pressure of the working gas in the sputtering furnace is 0.4Pa, Ar gas and H 2 The flow rates of S are 40mL / min and 50mL / min respectively, the distance from the target to the substrate is 10cm, and the prepared prefabricated layer is CuIn 0.77 Ga 0.51 S 2.58 .
[0043] Post-selenization process process parameters: select diethyl selenium ((C 2 h 5 ) Se 2 :DESe) is the selenium source, with argon as the working gas, diethyl selenium ((C 2 h 5 ) Se 2 :DESe) at a heating rate of 1°C / s to 350°C to obtain a gaseous selenium source at 350°C. CuIn 0.77 Ga 0.51 S 2.58 The prefabricated layer was heated to 650°C, an...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 
PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.
