Organic photoelectric detector with high external quantum efficiency and broad spectral response and preparation method thereof
A technology of external quantum efficiency and photodetectors, which is applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of wide response spectrum of difficult devices, reduction of external quantum efficiency, and low external quantum efficiency. Achieve the effect of improving the external quantum efficiency, high photoelectric multiplication effect, and improving the spectral response range
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Embodiment 1
[0066] First, the ITO anode 3 on the glass substrate 2 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, blown dry with nitrogen, and the glass is placed in a vacuum oven and baked at 110 degrees Celsius for 30 minutes. After plasma treatment for 2 minutes, the glass was placed in a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 1 to 5×10 -4 At the time of Pascal, a layer of 4P-NPB was evaporated on the side of the glass without ITO, and then the electron injection barrier layer 4 (TPBi), the electron transport layer 5 (C70), and the active layer 6 (SnPc) were evaporated on the ITO layer in sequence. and C70 mixed layer), hole injection blocking layer 7 (BCP) and cathode 8 (Al), wherein the two electrodes cross each other to form the effective photodetection area of the device, and its effective area is 16 square millimeters, and the injection blocking layer 4 The thickness is 3 nanometers, the thi...
Embodiment 2
[0069] First, the ITO anode 3 on the glass substrate 2 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, blown dry with nitrogen, and the glass is placed in a vacuum oven and baked at 110 degrees Celsius for 30 minutes. After plasma treatment for 2 minutes, the glass was placed in a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 1 to 5×10 -4 At the time of Pascal, a layer of 4P-NPB was evaporated on the side of the glass without ITO, and then the electron injection barrier layer 4 (TPBi), the electron transport layer 5 (C70), and the active layer 6 (SnPc) were evaporated on the ITO layer in sequence. and C70 mixed layer), hole injection blocking layer 7 (BCP) and cathode 8 (Al), wherein the two electrodes intersect each other to form the effective photodetection area of the device, and its effective area is 16 square millimeters, and the injection blocking layer 4 The thickness is 3 nanometers, the...
Embodiment 3
[0072] First, the ITO anode 3 on the glass substrate 2 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, blown dry with nitrogen, and the glass is placed in a vacuum oven and baked at 110 degrees Celsius for 30 minutes. After plasma treatment for 2 minutes, the glass was placed in a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 1 to 5×10 -4 At the time of Pascal, a layer of 4P-NPB was evaporated on the side of the glass without ITO, and then the electron injection barrier layer 4 (TPBi), the electron transport layer 5 (C70), and the active layer 6 (SnPc) were evaporated on the ITO layer in sequence. and C70 mixed layer), hole injection blocking layer 7 (BCP) and cathode 8 (Al), wherein the two electrodes cross each other to form the effective photodetection area of the device, and its effective area is 16 square millimeters, and the injection blocking layer 4 The thickness is 3 nanometers, the thi...
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