An organic photodetector with high external quantum efficiency and wide spectral response and its preparation method
A technology of external quantum efficiency and photodetectors, applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve difficult problems such as wide response spectrum of devices, low external quantum efficiency, and reduced external quantum efficiency. Achieve the effects of improving external quantum efficiency, improving spectral response range, and high photoelectric multiplication effect
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Embodiment 1
[0066] First, the ITO anode 3 on the glass substrate 2 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, blown dry with nitrogen, and the glass is placed in a vacuum oven and baked at 110 degrees Celsius for 30 minutes. After plasma treatment for 2 minutes, the glass was placed in a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 1 to 5×10 -4 At the time of Pascal, a layer of 4P-NPB was evaporated on the side of the glass without ITO, and then the electron injection barrier layer 4 (TPBi), the electron transport layer 5 (C70), and the active layer 6 (SnPc) were evaporated on the ITO layer in sequence. and C70 mixed layer), hole injection blocking layer 7 (BCP) and cathode 8 (Al), wherein the two electrodes cross each other to form the effective photodetection area of the device, and its effective area is 16 square millimeters, and the injection blocking layer 4 The thickness is 3 nanometers, the thi...
Embodiment 2
[0069] First, the ITO anode 3 on the glass substrate 2 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, blown dry with nitrogen, and the glass is placed in a vacuum oven and baked at 110 degrees Celsius for 30 minutes. After plasma treatment for 2 minutes, the glass was placed in a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 1 to 5×10 -4 At the time of Pascal, a layer of 4P-NPB was evaporated on the side of the glass without ITO, and then the electron injection barrier layer 4 (TPBi), the electron transport layer 5 (C70), and the active layer 6 (SnPc) were evaporated on the ITO layer in sequence. and C70 mixed layer), hole injection blocking layer 7 (BCP) and cathode 8 (Al), wherein the two electrodes cross each other to form the effective photodetection area of the device, and its effective area is 16 square millimeters, and the injection blocking layer 4 The thickness is 3 nanometers, the thi...
Embodiment 3
[0072] First, the ITO anode 3 on the glass substrate 2 is photoetched into an electrode with a width of 4 mm and a length of 30 mm, then cleaned, blown dry with nitrogen, and the glass is placed in a vacuum oven and baked at 110 degrees Celsius for 30 minutes. After plasma treatment for 2 minutes, the glass was placed in a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 1 to 5×10 -4 At the time of Pascal, a layer of 4P-NPB was evaporated on the side of the glass without ITO, and then the electron injection barrier layer 4 (TPBi), the electron transport layer 5 (C70), and the active layer 6 (SnPc) were evaporated on the ITO layer in sequence. and C70 mixed layer), hole injection blocking layer 7 (BCP) and cathode 8 (Al), wherein the two electrodes cross each other to form the effective photodetection area of the device, and its effective area is 16 square millimeters, and the injection blocking layer 4 The thickness is 3 nanometers, the thi...
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