Method for preparing nitrogen oxygen silicon thin film
A silicon oxynitride and thin film technology, which is used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of high deposition temperature and difficult control of various indicators of thin films.
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no. 1 example
[0027] The first example of the present invention prepares the method for silicon oxynitride thin film, concrete steps are as follows:
[0028] 1) Deposition chamber stage such as figure 1 The stage 2 in the middle reaction chamber, that is, the temperature of the heating plate is 400°C,
[0029] Its control method is to monitor and control the temperature in real time through thermocouples
[0030] 2) Put the wafer 3 on the stage 2 of the reaction chamber, pass the gas silane, laughing gas, helium and nitrogen into the reaction chamber through the upper electrode shower head 1, and the gas flow rate is 300 sccm for silane; 1100sccm; 5000sccm for helium; 900sccm for nitrogen.
[0031] 3) While the chamber is being ventilated, set the reaction chamber pressure to 3.5 torr, which is the reaction pressure during the deposition process;
[0032] 4) On the basis of the ventilation step, the radio frequency is provided by the radio frequency system to start the film deposition pr...
Embodiment approach 2
[0038] The second example of the present invention prepares the method for silicon oxynitride thin film, concrete steps are as follows:
[0039] 1) Deposition chamber stage such as figure 1 The stage 2 in the middle reaction chamber, that is, the temperature of the heating plate is 400°C, and its
[0040] The control method is to monitor and control the temperature in real time through thermocouples
[0041] 2) Put the wafer 3 on the stage 2 of the reaction chamber, pass the gas silane, nitrous oxide, helium and nitrogen into the reaction chamber through the upper electrode shower head 1, and change the flow ratio of silane and nitrous oxide, 270 / 900, 285 / 1000, 300 / 1100, 315 / 1200 and 330 / 1300 sccm.
[0042] 3) While the chamber is being ventilated, set the reaction chamber pressure to 3.5 torr, which is the reaction pressure during the deposition process;
[0043] 4) On the basis of the aeration step, the radio frequency is provided by the radio frequency system, and the r...
Embodiment 2
[0047] Example 2 shows that by changing the flow ratio of the reaction gas silane and laughing gas, the deposition rate can also be changed, and at the same time the optical constants of the film can be changed to realize different applications of the film in semiconductor integrated circuits.
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