A kind of silicon carbide-based semiconductor circuit breaker and its preparation method

Abstract

The invention discloses a manufacturing method for a semiconductor cut-out switch based on silicon carbide. The method comprises the following steps: using silicon carbide as an N+ substrate, a phosphorus-doped N base region, an aluminum-doped P base region, and a boron-doped heavy-doping P+ region epitaxially growing in sequence on the substrate; respectively processing two ends of the formed device to form a cathode electrode and an anode electrode; using a mechanical cutting oblique angle method to execute platform modeling and gumming protection, so as to complete a manufacturing process of the semiconductor cut-out switch. The invention also discloses a semiconductor cut-out switch based on silicon carbide, the switch being manufactured by the method. The semiconductor cut-out switch manufactured by the manufacturing method has larger compromise among pumping, switching, and switching characteristics, heat radiation requirement under a high-frequency condition is reduced, and reliability under high-temperature condition is improved.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor switches, and more specifically relates to a silicon carbide-based semiconductor circuit breaker and a preparation method thereof. Background technique

[0002] Semiconductor opening switch SOS (Semiconductor Opening Switch) is a new type of solid switching device, which was first discovered in 1991 by S.K.Lyubutin and others from the Russian Institute of Electrophysics when they used high-voltage diodes (SDL) for rectification experiments. Forward current and reverse current (current density up to tens of kA / cm 2 , the current passing time is hundreds of ns) through p + -p-n-n + The structure of the semiconductor, the decay time of the reverse current is reduced to tens of ns. This phenomenon that the large current density is truncated in the nanosecond time is called the SOS effect. The compact all-solid-state high repetition frequency pulse power source based on SOS switch has the adv...

Examples

Embodiment 1

[0063] In Example 1, N + The thickness of the substrate is 300 μm; the concentration of phosphorus doped in the N base is 10 14 cm 3 , with a thickness of 10 μm; the concentration of doped aluminum in the P base region is 10 16 / cm 3 ~10 17 / cm 3 , and the concentration gradient is 9*10 14 / (cm 3 μm) incremental growth with a thickness of 100 μm; heavily doped P + region doped with boron at a concentration of 10 19 / cm 3 , with a thickness of 1 μm;

Embodiment 2

[0065] Example 2 according to figure 1 The illustrated process flow is used to complete the preparation of the silicon carbide-based semiconductor circuit breaker, the difference from Embodiment 1 is:

[0066] In step (2), the concentration of the N base region is controlled at 10 16 / cm 3 ~10 17 / cm 3 , and the concentration gradient is 9*10 14 / (cm 3 μm) incremental growth, with a thickness of 100 μm; under this parameter condition, when the switch PN junction is conducting forward, the accumulation of minority carriers on both sides of the space charge region, when the switch PN junction voltage reverses, can produce a large The reverse current realizes the SOS effect, which is beneficial to the miniaturization of the device;

[0067] And in step (3), the doping concentration of the P base region doped with aluminum is 10 14 / cm 3 ;

[0068] And in step (6), when the mesa is processed by mechanical cutting into an oblique angle, the PN junction is cut and penetrate...

technical field

[0001] The invention belongs to the technical field of semiconductor switches, and more specifically relates to a silicon carbide-based semiconductor circuit breaker and a preparation method thereof. Background technique

[0002] Semiconductor opening switch SOS (Semiconductor Opening Switch) is a new type of solid switching device, which was first discovered in 1991 by S.K.Lyubutin and others from the Russian Institute of Electrophysics when they used high-voltage diodes (SDL) for rectification experiments. Forward current and reverse current (current density up to tens of kA / cm 2 , the current passing time is hundreds of ns) through p + -p-n-n + The structure of the semiconductor, the decay time of the reverse current is reduced to tens of ns. This phenomenon that the large current density is truncated in the nanosecond time is called the SOS effect. The compact all-solid-state high repetition frequency pulse power source based on SOS switch has the adv...

Examples

Embodiment 1

[0063] In Example 1, N + The thickness of the substrate is 300 μm; the concentration of phosphorus doped in the N base is 10 14 cm 3 , with a thickness of 10 μm; the concentration of doped aluminum in the P base region is 10 16 / cm 3 ~10 17 / cm 3 , and the concentration gradient is 9*10 14 / (cm 3 μm) incremental growth with a thickness of 100 μm; heavily doped P + region doped with boron at a concentration of 10 19 / cm 3 , with a thickness of 1 μm;

Embodiment 2

[0065] Example 2 according to figure 1 The illustrated process flow is used to complete the preparation of the silicon carbide-based semiconductor circuit breaker, the difference from Embodiment 1 is:

[0066] In step (2), the concentration of the N base region is controlled at 10 16 / cm 3 ~10 17 / cm 3 , and the concentration gradient is 9*10 14 / (cm 3 μm) incremental growth, with a thickness of 100 μm; under this parameter condition, when the switch PN junction is conducting forward, the accumulation of minority carriers on both sides of the space charge region, when the switch PN junction voltage reverses, can produce a large The reverse current realizes the SOS effect, which is beneficial to the miniaturization of the device;

[0067] And in step (3), the doping concentration of the P base region doped with aluminum is 10 14 / cm 3 ;

[0068] And in step (6), when the mesa is processed by mechanical cutting into an oblique angle, the PN junction is cut and penetrate...

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