Flake diamond-reinforced metal matrix composite and preparation method

A diamond-reinforced and composite material technology, which is applied in the field of composite diamond material preparation, can solve the problems of loose two-phase interface, poor wettability between diamond rod and matrix metal, etc., and achieve high production efficiency and high flexibility.

Active Publication Date: 2016-01-06
CENT SOUTH UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The copper-based diamond composite material prepared by this method has good directional thermal conductivity, but due to the extremely poor wettability between the diamond rod and the base metal, the two-phase interface is not tightly combined, and the interface between the diamond rod and the base metal A large thermal resistance is formed at the place, and its thermal conductivity needs to be further optimized

Method used

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  • Flake diamond-reinforced metal matrix composite and preparation method
  • Flake diamond-reinforced metal matrix composite and preparation method
  • Flake diamond-reinforced metal matrix composite and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0074] A tungsten foil with a thickness of 0.05mm is selected as the metal substrate. First, the surface of the metal substrate is pre-treated according to step (1); and then the diamond film is deposited by hot wire CVD according to step (2). The deposition process parameters: the distance between the hot wire and the wire is 6mm , substrate temperature 800°C, filament temperature 2200°C, deposition pressure 3KPa, deposition time 40 hours, CH 4 / H 2The volume flow ratio is 1:99, and the thickness of the diamond film is 60 μm, that is, the diamond sheet is obtained; (3) a layer of metal Ni film is first sputtered on the surface of the cored diamond sheet by magnetron sputtering, the sputtering power is 150W, and the pressure is 0.4 Pa, substrate temperature 300°C, argon flow rate 20sccm, Ni film thickness 1.0 μm; then use chemical vapor deposition technology to deposit a layer of graphene film on the surface of Ni film, film thickness 0.34nm; then use electroplating technology...

Embodiment 2

[0076] A copper foil with a thickness of 0.05mm is selected as the metal substrate, and it is rolled into a cylindrical shape with a diameter of 12mm, 10mm, and 8mm. Firstly, the surface of the metal substrate is pre-treated according to step (1); then, according to step (2), a diamond film is deposited on the inner and outer surfaces of each barrel-shaped metal substrate by hot-wire CVD deposition. The arrangement of the hot wire is shown in Figure 7. Show. Deposition process parameters: hot wire distance 6mm, substrate temperature 850°C, hot wire temperature 2200°C, deposition pressure 3KPa, deposition time 50 hours, CH4 / H2 volume flow ratio 1:99, to obtain a diamond film thickness of 100 μm, that is, a metal-lined (3) A layer of metal Cu film is sputtered on the inner and outer surfaces of the diamond sheet by magnetron sputtering, the sputtering power is 150W, the pressure is 0.4Pa, the substrate temperature is 300°C, the argon flow rate is 20sccm, and the Cu film thicknes...

Embodiment 3

[0078] Choose a silicon wafer with a thickness of 1.5mm as the sheet substrate, firstly carry out pre-treatment on the surface of the silicon substrate according to step (1); then follow step (2) to deposit a diamond film by hot wire CVD, deposition process parameters: hot wire distance 6mm, Substrate temperature 900°C, filament temperature 2300°C, deposition pressure 3KPa, deposition time 300 hours, CH 4 / H 2 The volume flow ratio is 3:97, and the thickness of the diamond film is 600 μm. After etching the sheet silicon substrate, the sheet-shaped self-supporting diamond is obtained; (3) a layer of metal Ni film is sputtered on the surface of the diamond sheet by magnetron sputtering method , the sputtering power is 200W, the pressure is 0.3Pa, the substrate temperature is 350°C, the argon gas flow rate is 50sccm, and the thickness of the Ni film is 0.5μm; the graphene film is prepared on the surface of the Ni film by chemical vapor deposition technology, and the thickness is ...

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Abstract

The invention provides a flake diamond-reinforced metal matrix composite and a preparation method. The composite is formed by arranging diamond sheets in a matrix metal, and the diamond sheets and the matrix metal are in metallurgical bonding. The preparation method comprises the steps that one of the casting, infiltration, cold-press sintering, hot-press sintering and plasma sintering processes is adopted, the matrix metal or the matrix metal containing surface modification diamond particles and the diamond sheets are compounded, and the flake diamond-reinforced metal matrix composite with the diamond sheets and the matrix metal in metallurgical bonding is obtained. As flake diamond frameworks are distributed in the matrix metal, a certain number of diamond particles are added in the matrix metal, and the diamond sheets are subjected to surface modification through the sandwich structure that a graphene layer is clamped between bottom metal film and surface metal film, the composite has the excellent heat conducting property and can be taken as electronic packaging and heat sink materials and the like, and package of high-temperature, high-frequency and large-power electronic devices is achieved.

Description

technical field [0001] The invention discloses a method for preparing a sheet-like diamond-reinforced metal matrix composite material, which belongs to the technical field of composite diamond material preparation. Background technique [0002] With the rapid development of modern electronic information technology, the integration and power consumption of electronic components are constantly increasing, and heat dissipation has become one of the key factors affecting the reliability of electronic products. The thermal conductivity of traditional electronic packaging materials has been difficult to meet the needs of modern electronic device cooling tasks. At the same time, the development of electronic products toward miniaturization, light weight, and complexity also puts forward higher requirements for electronic packaging materials. [0003] In recent years, metal matrix composites with diamond as a reinforcing phase have been hailed as the fourth generation of new electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C26/00C22C49/14C22C101/08C22C121/02
Inventor 马莉魏秋平周科朝余志明李志友
Owner CENT SOUTH UNIV
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