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A kind of silicon carbide epitaxial material and its production method

A production method and technology of epitaxial materials, which are applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as limitations and lack of versatility, and achieve the effects of quality improvement, quality improvement, and easy operation

Active Publication Date: 2019-03-05
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the prior art, Chen (J. Appl. Phys. 2005. 98, 114907) et al. reported that epitaxy on a substrate with a small off-angle can effectively reduce the base sagittal plane dislocation density in SiC epitaxial materials, but this method is limited by Limited to SiC substrates, lack of versatility, and cannot fundamentally solve the problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A method for producing a silicon carbide epitaxial material, the method comprising the following steps:

[0027] (1) Substrate preparation: Select a 4-inch (0001) silicon-surface silicon carbide substrate with a 4° deviation from the direction, and perform standard cleaning and stand-by;

[0028] (2) Put the silicon carbide substrate into the reaction chamber of the CVD equipment and evacuate to 5×10 -6 Below mbar;

[0029] (3) The temperature is raised to 1650 °C under the condition that the carrier gas hydrogen flow is 60 slm and the pressure is controlled at 100 mbar, and the silane growth source and the propane growth source are passed in for epitaxial growth, and the N-type doping source used in the growth is nitrogen; After the first growth, the thickness of the obtained first epitaxial layer is 1 micron;

[0030] (4) Take out the wafer for inductively coupled plasma etching, and the etching atmosphere is SF 6 and O 2 mixture, SF in the mixture 6 and O 2 T...

Embodiment 2

[0034] A method for producing a silicon carbide epitaxial material, the method comprising the following steps:

[0035] (1) Substrate preparation: select a 3-inch (0001) silicon-surface silicon carbide substrate with a 4° deviation from the direction, clean it in a standard manner and set it aside for use;

[0036] (2) Put the silicon carbide substrate into the reaction chamber of the CVD equipment and evacuate to 5×10 -6 Below mbar;

[0037] (3) Under the condition that the carrier gas hydrogen flow is 30 slm and the pressure is controlled at 900 mbar, the temperature is raised to 1500 °C, and the dichlorosilane growth source and the ethylene growth source are passed in for epitaxial growth. The P-type doping source used in the growth is Trimethyl aluminum, the thickness of the obtained first epitaxial layer is about 5 microns;

[0038] (4) Take out the wafer for inductively coupled plasma etching, and the etching atmosphere is SF 6 and O 2 mixture, SF in the mixture 6...

Embodiment 3

[0042] A method for producing a silicon carbide epitaxial material, the method comprising the following steps:

[0043] (1) Substrate preparation: Select a 4-inch (0001) silicon-surface silicon carbide substrate with an 8° deviation from the direction, perform standard cleaning and set aside for use;

[0044] (2) Put the silicon carbide substrate into the reaction chamber of the CVD equipment and evacuate to 5×10 -6 Below mbar;

[0045] (3) Under the condition that the carrier gas hydrogen flow is 5 slm and the pressure is controlled at 500 mbar, the temperature is increased to 1350 °C, and the trichlorosilane growth source and the chloromethane growth source are passed in for epitaxial growth, and the growth time is 30 min without adding Doping source, after the first growth, the thickness of the obtained first epitaxial layer is 10 microns;

[0046] (4) Take out the wafer for inductively coupled plasma etching, and the etching atmosphere is SF 6 and O 2 mixture, SF in ...

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Abstract

The invention discloses a silicon carbide epitaxial material and a production method thereof, and relates to the technical field of semiconductors. The silicon carbide epitaxial material comprises a silicon carbide substrate, a first epitaxial layer and a second epitaxial layer sequentially. The production method comprises the steps including first epitaxial growth, inductively coupled plasma etching and second epitaxial growth. The dislocation density of the basis vector surface in the second epitaxial layer can be reduced, the whole quality of the silicon carbide epitaxial material is improved, and the material can be widely popularized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon carbide epitaxial material. Background technique [0002] Silicon carbide (SiC), as a wide-bandgap semiconductor material, has outstanding advantages such as high thermal conductivity, high breakdown electric field, high saturation electron drift rate and high bonding energy. , high power and radiation resistance requirements. [0003] Since the quality and surface of the SiC substrate material cannot meet the requirements for direct fabrication of devices, it is necessary to epitaxially grow a SiC epitaxial layer on the surface of the SiC wafer, which has higher quality and better electrical properties than the SiC wafer. , and has better controllability and repeatability. [0004] In the prior art, there are many methods for epitaxial growth of silicon carbide. Among them, chemical vapor deposition (CVD) growth technology has become the current mass productio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02378H01L21/02529H01L21/0259H01L21/0262H01L21/02664
Inventor 芦伟立李佳房玉龙尹甲运冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP