Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method

A technology of texturing liquid and pyramid, which is applied in the field of solar cells, can solve the problems of long reaction time and achieve the effects of shortening time, reducing cost and simplifying operation process

Active Publication Date: 2016-03-16
深圳市石金科技股份有限公司
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the alkaline texturing solution needs to be heated to 7...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method
  • Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method
  • Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] 1) Surface cleaning steps

[0061] Take a P-type silicon wafer with a size of 156cm×156cm (resistivity 1Ω·cm~3Ω·cm), put it in acetone and ultrasonically clean it for 5 minutes, put it in ethanol for 5 minutes, and then place it in sulfuric acid solution and In the mixed liquid of hydrogen peroxide solution (the concentration of sulfuric acid solution is 70wt.%, the concentration of hydrogen peroxide solution is 35wt.%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3:1), heat and boil the silicon chip and keep it for 0.5 hours, and finally Clean it ultrasonically with deionized water.

[0062] 2) Etching step

[0063] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in the acidic texturing solution consisting of copper nitrate, hydrofluoric acid and nitric acid (wherein the concentration of copper nitrate is 8.0mmol / L, and the concentration of hydrofluoric acid is 4.8 mol / L, the concentration of nitric acid is 1.2 mol / L...

Embodiment 2

[0067] 1) Surface cleaning steps

[0068] Take a P-type silicon wafer with a size of 156cm×156cm (resistivity 1Ω·cm~3Ω·cm), put it in acetone and ultrasonically clean it for 5 minutes, put it in ethanol for 5 minutes, and then place it in sulfuric acid solution and In the mixed solution of hydrogen peroxide solution (the concentration of sulfuric acid solution is 70wt.%, the concentration of hydrogen peroxide solution is 35wt.%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3:1), silicon wafer is heated and boiled and kept for 0.5 hours, and finally Clean it ultrasonically with deionized water.

[0069] 2) Etching step

[0070] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in an acidic texturing solution consisting of copper nitrate, hydrofluoric acid and nitric acid (wherein the concentration of copper nitrate is 10mmol / L, and the concentration of hydrofluoric acid is 4.8mol / L, the concentration of nitric acid is 1.2mol / L...

Embodiment 3

[0075] 1) Surface cleaning steps

[0076] Take a P-type silicon wafer with a size of 156cm×156cm (resistivity 1Ω·cm~3Ω·cm), put it in acetone and ultrasonically clean it for 5 minutes, put it in ethanol for 5 minutes, and then place it in sulfur solution and In the mixed liquid of hydrogen peroxide solution (the concentration of sulfuric acid solution is 70wt.%, the concentration of hydrogen peroxide solution is 35wt.%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3:1), heat and boil the silicon chip and keep it for 0.5 hours, and finally Clean it ultrasonically with deionized water.

[0077] 2) Etching step

[0078] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in an acidic texturing solution consisting of copper nitrate, hydrofluoric acid and nitric acid (wherein the concentration of copper nitrate is 10mmol / L, and the concentration of hydrofluoric acid is 4.8mol / L, the concentration of nitric acid is 1.8mol / L), at room...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Heightaaaaaaaaaa
Resistivityaaaaaaaaaa
Sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides an acidic texturing liquid for silicon wafer pyramid texturing, a texturing method and a silicon wafer formed in a texturing manner through adoption of the texturing method. The acidic texturing liquid comprises a copper ion source for providing 0.1-25.0 mmol/L copper ions, a fluoride ion source for providing 0.5-10.0 mol/L fluoride ions, and a 0.1-5.0mol/L oxidant for capable of oxidizing silicon in the silicon wafer into silicon oxide and copper into the copper ions. A surface of the silicon wafer is preferably textured by virtue of the acidic texturing solution and thus an independent, complete and compactly arranged positive-pyramid structure textured structure is formed on the surface of the silicon wafer at an indoor temperature condition and a relatively short time. Surface reflectivity of textured structure is between 10% and 25%, and a difference between the reflectivity of the positive-pyramid structure textured structure and reflectivity of a pyramid textured structure, obtained through adoption of alkali texturing in great industry production, of a surface of a silicon wafer is very small. The acidic texturing liquid and the texturing method, which are used in the method, can reduce production cost and reaction temperature, shorten reaction time and increase the production capacity.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an acidic texturing solution for pyramid texturing of silicon wafers, a texturing method and silicon wafers produced by using the texturing method. Background technique [0002] With the development of society, the demand for energy in all countries in the world has increased sharply, while non-renewable resources such as fossil energy are decreasing day by day, and fossil energy is seriously polluting the environment. As a new type of green renewable energy, solar energy is expected to become one of the main energy sources in the future. At present, crystalline silicon solar cells are one of the effective ways to utilize solar energy, and occupy a mainstream position in the photovoltaic industry. In the photovoltaic industry, solar cells have been developing towards high conversion efficiency and low cost. An important part of improving the conversion efficiency of solar cel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/306H01L31/18H01L31/0236
CPCH01L21/30608H01L31/02363H01L31/1804Y02P70/50
Inventor 陈伟刘尧平杨丽霞梁会力梅增霞杜小龙
Owner 深圳市石金科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap