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Organic inorganic hybrid perovskite film and manufacturing method of perovskite solar cell

A perovskite and inorganic technology, applied in the field of solar cells, can solve the problems of complex preparation process, rough film surface, and many film grain boundaries, and achieve the effects of simple reaction device, less harmful gas emission, and smooth film surface.

Active Publication Date: 2016-04-06
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve many problems such as rough surface of the film, more grain boundaries of the film, complex preparation process and high equipment cost in the method of preparing hybrid perovskite film reported in the literature at present, and invents a sublimation-assisted in-situ gas-phase Preparation of hybrid perovskite thin films by solid-state reaction method and preparation of perovskite solar cells by this method

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preparation example Construction

[0034] The invention adopts sublimation-assisted in-situ gas-solid phase reaction method to prepare hybrid perovskite film, and the chemical formula of the perovskite film is ABX 3 . where A is a cation of an organic amine, including but not limited to CH 3 NH 3 + ,NH 2 -CH=NH 2 + , C 4 h 9 NH 3 + Wait. B=Pb 2+ ,Sn 2+ , Ge 2+ ,Co 2+ , Fe2+ , Mn 2+ , Cu 2+ , and Ni 2+ at least one of the That is, the B site may be one of these ions, or may be a mixed structure of any two or more of these ions. In one example, ABX 3 ASn 1-x Pb x x 3 (0- , Br - , I - at least one of the That is, X may be a single halogen or a mixed halogen such as a mixture of any two halogens. For example, the perovskite film includes but is not limited to lead iodide methylamine, lead iodide formamidine, and the like. Specifically, as an example, its preparation method may include the following steps.

[0035] 1) Spin coating the halide solution of B on the substrate to obtain the ha...

Embodiment 1

[0068](1) Clean the substrate. Use acetone, alkaline detergent, deionized water, and acetone to ultrasonically clean for ten minutes, and finally blow dry with high-pressure gas;

[0069] (2) Preparation of lead iodide film. Absorb 1mol / L lead iodide (PbI 2 ) of N,N-dimethylformamide (DMF) solution was added dropwise on the substrate in step (1), so that the solution covered the entire surface of the substrate, and the spin coating speed was 6500 rpm for 5 s. Then bake on a hot plate at 90°C for 4 minutes;

[0070] (3) Preparation of organic-inorganic hybrid perovskite CH 3 NH 3 PB 3 film. Put a certain amount of CH at the bottom of the vacuum oven 3 NH 3 I powder; PbI after drying in step (2) 2 The thin film is placed on the support so that the PbI 2 Thin film facing CH 3 NH 3 I powder, the distance between the two is 15 mm, and CH is grown at 90 °C and 0.5 kPa 3 NH 3 PB 3 Film, holding time is 1.5 hours.

Embodiment 2

[0072] (1) Clean the transparent conductive substrate. Use alkaline detergent, deionized water, acetone, and ethanol to ultrasonically clean the FTO for ten minutes, then dry;

[0073] (2) Preparation of a hole blocking layer. The precursor solution solvent is ethanol, which includes the following components: tetraisopropyl titanate (0.3mol / L), acetylacetone (0.45mol / L), hydrochloric acid (0.09mol / L), water (1.8mol / L). Take the precursor solution and add it dropwise on the FTO in step (1), so that the solution covers the entire surface of the FTO, spin coating at a speed of 3000 rpm for 20 s. Then sinter at 510°C for 30min in a muffle furnace;

[0074] (3) Preparation of organic-inorganic hybrid perovskite CH 3 NH 3 PB 3 absorbent layer. Spin-coat 578 mg / mL of PbI on the sample sintered in step (2) 2 The dimethylimide solution, the rotation speed is 6500rpm, and the time is 5s. After drying at 90°C for 5 minutes, the PbI 2 The thin film sample is placed at the bottom ...

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Abstract

The invention relates to an organic inorganic hybrid perovskite film and a manufacturing method of a perovskite solar cell. A chemical formula of the perovskite film is ABX3, wherein the A is a positive ion of organic amine; the B is at least one of Pb<2+>, Sn<2+>, Ge<2+>, Co<2+>, Fe<2+>, Mn<2+>, Cu<2+> and Ni<2+>; and the X is at least one of Cl<->, Br<-> and I<->. The manufacturing method comprises the following steps of (1) carrying out spin coating on a halogenide solution of the B on a substrate and acquiring a halide film of the B; and (2) placing a halide powder of the A in a closed cavity and placing the halide film of the B acquired through the step (1) at a position with a certain height above the halide powder of the A as a mode of facing the halide powder of the A so that pressure in the cavity is less than 5 kpas, and carrying out heat preservation for 10 mins-24 hs at 80-150 DEG C so that the perovskite film can be obtained. A surface of the manufactured perovskite film is flat, a grain is large and a grain boundary is small so that excellent photovoltaic conversion performance is possessed.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing a thin film for a solar cell, and more specifically, to a method for preparing an organic-inorganic hybrid perovskite thin film and a perovskite solar cell. Background technique [0002] With the development of human society, the demand for energy is increasing day by day. As a clean and non-polluting energy source, solar energy has received extensive attention and in-depth research at home and abroad. Solar cells based on organic-inorganic hybrid perovskite films are a new type of solar cells developed in recent years, and their advantages are very prominent: 1. Organic-inorganic hybrid perovskite materials are easy to manufacture and low in cost; 2. More suitable bandgap width (1.5-2.3eV), larger range of light absorption; 3. The charge diffusion length is up to micron level, and the charge lifetime is longer. Therefore, perovskite solar cells and r...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/30H10K30/15Y02E10/549Y02P70/50
Inventor 杨松旺解俊杰高潜潜雷磊曹启鹏刘岩
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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