Highly conductive substrate and manufacturing method thereof

Abstract

The present disclosure relates to highly conductive substrates and methods of making the same. A method for manufacturing a high-conductivity substrate, comprising the following steps: firstly, a substrate is provided; then, a conductive polymer layer is formed on the substrate; finally, a graphene is conductively deposited by electrophoretic deposition through an electrophoretic suspension A thin film is correspondingly formed on the conductive polymer layer, wherein the electrophoretic suspension contains 250 to 750 ppm of graphene dispersion and electrolyte. Compared with the existing production process in the industry, the new method disclosed by the invention is easy to control, easy to operate and low in cost, and has considerable economic value and wide applicability. The present invention further discloses a high-conductivity substrate manufactured by the above-mentioned manufacturing method.

Description

technical field [0001] The invention relates to a manufacturing process of a conductive thin film, in particular to a manufacturing method of a high-conductivity substrate using electrophoretic deposition technology. Background technique [0002] For a long time, people have been committed to the research and development of various optoelectronic components such as liquid crystal displays, solar cells, and light-emitting diodes. Compared with other conductive materials, indium tin oxide (ITO) is distinguished by its high conductivity and light transmittance. Become the main transparent conductive film material today. However, ITO has problems such as high production costs and rising prices due to the scarcity of raw materials. At the same time, the brittleness of ITO makes it unable to meet the performance requirements of some new applications. Therefore, the industry has tried to develop alternative materials for ITO. [0003] Graphene has many excellent properties, which ...

AI Technical Summary

Problems solved by technology

Among them, although graphene with better quality can be obtained by mechanical exfoliation and epitaxial growth, neither of these two methods can synthesize large-area graphene.

In addition, although high-quality graphene with a relatively perfect structure can be obtained by chemical vapor deposition, this method must use a production process temperature of nearly 1,000 degrees and expensive metal substrates (such as copper or nickel), so there are still requirements for equipment. higher defect

[0010] The chemical exfoliation method can be roughly divided into two methods: ultrasonic vibration (ultrasonication) exfoliation or ion intercalation of graphite materials, and exfoliation of oxides from graphite oxide blocks. Although the chemical exfoliation method has the advantages of large-scale mass production and solution solution processed fabrication and easy subsequent chemical functionalization, etc., but it may lead to the problem of poor light transmittance of the film

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