An Organic Ultraviolet Detector Based on Iridium Complex Phosphorescent Material Doping

A technology of iridium complexes and phosphorescent materials, applied in the field of organic ultraviolet detection devices, can solve problems such as low photoresponsivity, and achieve the effects of high responsivity, strong ultraviolet light absorption, and good thermochemical stability

Inactive Publication Date: 2018-05-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of low photoresponsivity of existing organic ultraviolet detection devices, the present invention provides an organic ultraviolet detection device based on iridium complex phosphorescent material doping, by adding iridium with strong ultraviolet absorption into the ultraviolet active layer Complex Phosphorescent Materials for Improving the Photoresponsivity of Organic Ultraviolet Detection Devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Organic Ultraviolet Detector Based on Iridium Complex Phosphorescent Material Doping
  • An Organic Ultraviolet Detector Based on Iridium Complex Phosphorescent Material Doping
  • An Organic Ultraviolet Detector Based on Iridium Complex Phosphorescent Material Doping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment one (control group)

[0047] Clean the substrate composed of the substrate and the transparent conductive anode ITO, and dry it with nitrogen after cleaning; spin-coat PEDOT:PSS (1500rpm, 15nm) on the surface of the transparent conductive anode ITO to prepare the anode buffer layer, and the formed The film is baked (150°C, 30min); the electron blocking layer TAPC5nm is evaporated on the anode buffer layer, and the electron blocking layer is prepared by spin coating PVK:ZnO (60%:40%) ultraviolet photoactive layer (1500rpm, 120nm ), and baked (100° C., 15 min); a hole-blocking layer Bphen 5 nm was prepared by evaporation on the surface of the ultraviolet photoactive layer, and a metal cathode Ag (100 nm) was evaporated on the hole-blocking layer. Under standard test conditions: 350nm, 0.6mW / cm 2 Under the condition of -2V for ultraviolet light, the measured responsivity of the device is 1.5A / W.

Embodiment 2

[0049] Clean the substrate composed of the substrate and the transparent conductive anode ITO, and dry it with nitrogen after cleaning; spin-coat PEDOT:PSS (1500rpm, 15nm) on the surface of the transparent conductive anode ITO to prepare the anode buffer layer, and the formed The film was baked (150°C, 30min); the electron blocking layer TAPC 5nm was evaporated on the anode buffer layer, and PVK:FIrpic:ZnO(60%:1%:39%) was prepared by spin coating on the electron blocking layer with ultraviolet light The active layer (1500rpm, 120nm) was baked (100°C, 15min); the hole blocking layer Bphen 5nm was prepared by evaporation on the surface of the ultraviolet photoactive layer, and the metal cathode Ag (100nm) was evaporated on the hole blocking layer. Under standard test conditions: 350nm, 0.6mW / cm 2 Under the condition of -2V for ultraviolet light, the measured responsivity of the device is 3.2A / W.

Embodiment 3

[0051] Clean the substrate composed of the substrate and the transparent conductive anode ITO, and dry it with nitrogen after cleaning; spin-coat PEDOT:PSS (1500rpm, 15nm) on the surface of the transparent conductive anode ITO to prepare the anode buffer layer, and the formed The film was baked (150°C, 30min); the electron blocking layer TAPC 5nm was evaporated on the anode buffer layer, and PVK:FIrpic:ZnO(60%:5%:35%) was prepared by spin coating on the electron blocking layer with ultraviolet light The active layer (1500rpm, 120nm) was baked (100°C, 15min); the hole blocking layer Bphen 5nm was prepared by evaporation on the surface of the ultraviolet photoactive layer, and the metal cathode Ag (100nm) was evaporated on the hole blocking layer. Under standard test conditions: 350nm, 0.6mW / cm 2 Under the condition of -2V for ultraviolet light, the measured responsivity of the device is 4.5A / W.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of organic optoelectronics, and discloses an organic ultraviolet detection device based on iridium complex phosphorescent material doping, which is used to solve the problem of low photoresponsivity of the organic ultraviolet detection device. The present invention includes a bottom-up transparent substrate, a conductive anode, an anode buffer layer, an electron blocking layer, an ultraviolet photoactive layer, a hole blocking layer and a metal cathode, and is characterized in that the components of the ultraviolet photoactive layer and The weight percentage of each component is: 56-60% of electron donor; 34-39% of electron acceptor; 1-10% of iridium complex phosphorescent material. The iridium complex phosphorescent material of the present invention has strong ultraviolet light absorption, relatively long phosphorescence lifetime and good thermochemical stability, and is effectively combined with the donor-acceptor mixed material, and through the phosphorescence effect of the iridium complex, the The absorbed short-wavelength ultraviolet light is transferred to the electron acceptor through the triplet state energy, which improves the generation efficiency of excitons and improves the photoresponsivity of the device.

Description

technical field [0001] The invention belongs to the technical field of organic optoelectronics, and discloses an organic ultraviolet detection device based on iridium complex phosphorescent material doping. Background technique [0002] Ultraviolet light has a huge impact on human activities, so people started research on devices that can accurately measure ultraviolet radiation - ultraviolet detectors. Ultraviolet detectors have many applications in practice. They can be used to detect the intensity of ultraviolet rays in the atmosphere to prevent ultraviolet rays from harming the human body. Ultraviolet detectors can also be used to detect ultraviolet exposure, ultraviolet photochemical reactions, and UV germicidal lamps. In the military, ultraviolet detectors can be used for missile tracking. In addition, the UV detectors are available for smoke and fire detection. [0003] Ultraviolet photodetection devices based on inorganic wide-bandgap semiconductor materials have m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/342H10K30/15H10K30/10H10K30/20Y02E10/549Y02P70/50
Inventor 于军胜王晓王瀚雨钟建
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap