A kind of n-type silicon solar cell and its preparation method

A technology of solar cells and n-type silicon, which is applied in the field of solar cells, can solve the problems of low conversion efficiency, achieve the effects of increasing life, increasing open circuit voltage, and reducing manufacturing costs

Inactive Publication Date: 2017-10-03
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] One of the purposes of the present invention is to provide an n-type silicon solar cell to solve the problem of low conversion efficiency of existing n-type silicon solar cells

Method used

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  • A kind of n-type silicon solar cell and its preparation method
  • A kind of n-type silicon solar cell and its preparation method
  • A kind of n-type silicon solar cell and its preparation method

Examples

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Embodiment 1

[0032] Embodiment 1, an n-type silicon solar cell.

[0033] like figure 1 As shown, the n-type silicon solar cell provided in this embodiment includes an n-type silicon substrate 5, and a p-doped layer 4, a front passivation layer 3 and Reflective layer 2, the material adopted in front passivation layer 3 is silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ). The front electrode 1 is prepared by screen printing and sintering process, and the front electrode 1 passes through the anti-reflection layer 2 and the front passivation layer 3 and is in contact with the p-doped layer 4 .

[0034] On the back side of the n-type silicon substrate 5, an n is formed by doping + doped layer 6, the n + The back passivation layer 7 is formed on the doping layer 6, and the main material of the back passivation layer 7 is a ferroelectric thin film material. The ferroelectric thin film material can be, for example, lead zirconate titanate (PZT), barium titanate (BTO), iron Bismuth oxid...

Embodiment 2

[0035] Embodiment 2, a preparation method of an n-type silicon solar cell.

[0036] The preparation method of the n-type silicon solar cell provided in this embodiment comprises the following steps:

[0037] ①. Select an n-type silicon substrate, and clean the selected n-type silicon substrate. After cleaning, texture the front and back of the n-type silicon substrate, so that the front and back of the n-type silicon substrate form a pyramid-like texture. surface structure. The average height of the pyramids in the suede structure is generally controlled between 1 μm and 15 μm.

[0038] ②. Phosphorus is used to form a heavily doped n+ doped layer on the back of the n-type silicon substrate, and then cleaned to remove PSG (phosphosilicate glass); boron is diffused on the front of the n-type silicon substrate to obtain p-doping layer, thereby forming a pn junction, and then cleaning to remove BSG (borosilicate glass).

[0039] ③. A front passivation layer is prepared on the p...

Embodiment 3

[0056] Compared with embodiment 2, this embodiment adds a step after step ① and before step ②: planarizing the back side of the n-type silicon substrate. In this embodiment, the step of "planarizing the back of the n-type silicon substrate" is added, the purpose of which is to process the pyramid-shaped back into a slightly smooth back, that is, to smooth the top tip of the pyramid, so that the pyramid The apex-like structure of the structure and the sharp-edged horn-like structure at the bottom of the valley become smooth, and at the same time, the surface of the pyramid changes from rough to relatively smooth. After planarizing the back of the n-type silicon substrate, it should be ensured that natural local contacts can still be formed after the subsequent formation of the back passivation layer, which is convenient for subsequent direct preparation of the full back metal film as the back electrode.

[0057] In this embodiment, the back surface of the n-type silicon substra...

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Abstract

The invention provides an n type silicon solar cell and a preparation method therefor. The n type silicon solar cell comprises an n type silicon substrate, wherein a p type doped layer, a front surface passivating layer and an anti-reflection layer are manufactured on the front surface of the n type silicon substrate from the bottom up in sequence; the front surface passivating layer is a monox or silicon nitride film layer; a front surface electrode is manufactured by penetrating the anti-reflection layer and the front surface passivating layer; the front surface electrode is connected with the p type doped layer; an n+ doped layer is formed on the back surface of the n type silicon substrate through a doping manner; a back surface passivating layer is manufactured on the n+ doped layer; the back surface passivating layer comprises a film layer prepared from a ferroelectric film material or a doped ferroelectric film material; a full-back metal film is manufactured on the back surface passivating layer; and a back surface electrode of the cell is formed by the full-back metal film. According to the n type silicon solar cell, the ferroelectric film material is adopted as the main raw material of the back surface passivating layer of the cell, so that the open-circuit voltage, the short-circuit current and the fill factor of the cell can be well improved, and the conversion efficiency of the cell can be improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an n-type silicon solar cell and a preparation method thereof. Background technique [0002] The surface defects of crystalline silicon solar cells have a great influence on the performance of the cells. The open circuit voltage (V oc ), short circuit current (J sc ), fill factor (FF) and other main parameters largely depend on the level of surface defect density. The recombination loss of photogenerated carriers is one of the main ways of solar cell efficiency loss, and the surface recombination is the most important recombination loss. Reducing the surface defect density and reducing surface recombination are important means to improve the energy conversion efficiency of silicon solar cells. Passivation can effectively reduce the recombination of carriers, thereby improving the conversion efficiency of solar cells. Passivation usually has two methods: chemical passivati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/056H01L31/068H01L31/18
CPCH01L31/02167H01L31/02327H01L31/068H01L31/1868Y02E10/52Y02E10/547Y02P70/50
Inventor 陈剑辉麦耀华陈兵兵许颖代秀红刘保亭
Owner HEBEI UNIVERSITY
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