Copper-plated graphene reinforced copper-based electrical contact material and preparation method thereof
A technology of copper-coated graphene and electrical contact materials, which is applied in the direction of cable/conductor manufacturing, equipment for manufacturing conductive/semiconductive layers, circuits, etc., can solve the problem of reducing the electrical and thermal conductivity of copper contact materials, and the difficulty in obtaining Comprehensive performance of copper-based contact materials and other issues to achieve the effect of being suitable for large-scale mass production, high hardness, and refined grain structure
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Embodiment 1
[0035] (1) Copper-coated graphene was prepared by depositing metallic copper on the surface of graphene (number of layers 1-10) by DC magnetron sputtering. The copper target with a purity of 99.99% was first ground with fine sandpaper to remove the surface oxide film before installation, then cleaned with acetone, dried, and pre-sputtered for 5 minutes before deposition by DC magnetron sputtering. Graphene separates, removes metal oxides and other impurities on the target surface, and ensures the purity of the copper film deposited on the subsequent graphene surface. The process parameters of DC magnetron sputtering are: when the vacuum degree reaches 0.1*10 -3 At Pa, argon gas with a purity of 99.99% was introduced, the working pressure was 0.5Pa, the sputtering power was 100W, and the deposition time was 30min.
[0036] (2) The copper-rare earth alloy is made into 200-mesh alloy powder by centrifugal atomization method, the rare earth in the copper-rare earth is cerium-rich...
Embodiment 2
[0041] (1) Copper-coated graphene was prepared by depositing metallic copper on the surface of graphene (number of layers 1-10) by DC magnetron sputtering. The copper target with a purity of 99.99% was first ground with fine sandpaper to remove the surface oxide film before installation, then cleaned with acetone, dried, and pre-sputtered for 5 minutes before deposition by DC magnetron sputtering. Graphene separates, removes metal oxides and other impurities on the target surface, and ensures the purity of the copper film deposited on the subsequent graphene surface. The process parameters of DC magnetron sputtering are: when the vacuum degree reaches 1*10 -3At Pa, argon gas with a purity of 99.99% was introduced, the working pressure was 1.2Pa, the sputtering power was 150W, and the deposition time was 5min.
[0042] (2) The copper-rare earth alloy is made into 300-mesh alloy powder by ultrasonic atomization. The rare earth in the copper-rare earth is lanthanum-rich mixed ra...
Embodiment 3
[0047] (1) Copper-coated graphene was prepared by depositing metallic copper on the surface of graphene (number of layers 1-10) by DC magnetron sputtering. The copper target with a purity of 99.99% was first ground with fine sandpaper to remove the surface oxide film before installation, then cleaned with acetone, dried, and pre-sputtered for 5 minutes before deposition by DC magnetron sputtering. Graphene separates, removes metal oxides and other impurities on the target surface, and ensures the purity of the copper film deposited on the subsequent graphene surface. The process parameters of DC magnetron sputtering are: when the vacuum degree reaches 0.3*10-3Pa, argon gas with a purity of 99.99% is introduced, the working pressure is 0.8Pa, the sputtering power is 120W, and the deposition time is 5min.
[0048] (2) The copper-rare earth alloy is made into 200-mesh alloy powder by gas atomization method, the rare earth in the copper-rare earth is cerium-rich mixed rare earth m...
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