Preparation method and application of Cu2ZnSnS4/graphene composite semiconductor film

A graphene composite, graphene film technology, applied in semiconductor devices, electrolytic capacitors, coatings and other directions, can solve the problems of low solar energy utilization, easy recombination of photogenerated electrons and holes, affecting light absorption efficiency, etc. Industrialized production, low cost, cost reduction effect

Inactive Publication Date: 2016-06-15
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there are two main defects in semiconductors: (1) It can only absorb ultraviolet light with a wavelength of less than 420nm and the proportion of ultraviolet light in the solar spectrum is less than 5%, so the utilization rate of solar energy is very low; (2) The photogenerated electrons produced It is very easy to recombine with holes, which will directly affect the light absorption efficiency of

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  • Preparation method and application of Cu2ZnSnS4/graphene composite semiconductor film
  • Preparation method and application of Cu2ZnSnS4/graphene composite semiconductor film
  • Preparation method and application of Cu2ZnSnS4/graphene composite semiconductor film

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Embodiment 1

[0028] a Cu 2 ZnSnS 4 The preparation method of / graphene composite semiconductor thin film comprises the following steps:

[0029] (1) Cleaning of FTO conductive glass substrate: SnO doped with F 2 Put the transparent conductive glass FTO into acetone, absolute ethanol and deionized water in turn for ultrasonic cleaning for 10 minutes, and then dry;

[0030] (2) Preparation of graphene film skeleton: add 0.01 g of redox graphene powder prepared by improved hummer method to 50 ml of ethylene glycol solution, disperse it ultrasonically for 10 min with an ultrasonic pulverizer, and then use a dropper to absorb 0.02 ml of graphene suspension , added dropwise on the conductive surface of FTO glass, placed in a blower dryer, and dried at a constant temperature of 60°C to obtain a graphene film;

[0031] (3) Preparation of chemical reaction precursor solution: add 4mmol copper chloride, 2mmol zinc chloride, 2mmol stannous chloride to 50ml of ethylene glycol in turn, stir until ful...

Embodiment 2

[0034] a Cu 2 ZnSnS 4 The preparation method of / graphene composite semiconductor thin film comprises the following steps:

[0035] (1) Cleaning of FTO conductive glass substrate: SnO doped with F 2 Put the transparent conductive glass FTO into acetone, absolute ethanol and deionized water in turn for ultrasonic cleaning for 10 minutes, and then dry;

[0036] (2) Preparation of graphene film skeleton: add 0.1 g of redox graphene powder prepared by improved hummer method to 50 ml of ethylene glycol solution, disperse it ultrasonically for 10 min with an ultrasonic pulverizer, and then use a dropper to absorb 0.1 ml of graphene suspension , dropped on the conductive surface of FTO glass, placed in a blower dryer, and dried at a constant temperature of 200°C to obtain a graphene film;

[0037] (3) Preparation of chemical reaction precursor solution: Add 4mmol copper chloride, 2mmol zinc chloride, 2mmol stannous chloride to 50ml of ethylene glycol in turn, stir until fully disso...

Embodiment 3

[0040] a Cu 2 ZnSnS 4 The preparation method of / graphene composite semiconductor thin film comprises the following steps:

[0041] (1) Cleaning of FTO conductive glass substrate: SnO doped with F 2 Put the transparent conductive glass FTO into acetone, absolute ethanol and deionized water in turn for ultrasonic cleaning for 10 minutes, and then dry;

[0042] (2) Preparation of graphene film skeleton: add 0.05g of redox graphene powder prepared by improved hummer method to 50ml of ethylene glycol solution, ultrasonically disperse for 10min with an ultrasonic pulverizer, and then use a dropper to absorb 0.06ml of graphene suspension , added dropwise on the conductive surface of FTO glass, placed in a blower dryer, and dried at a constant temperature of 100°C to obtain a graphene film;

[0043] (3) Preparation of chemical reaction precursor solution: add 4mmol copper chloride, 2mmol zinc chloride, 2mmol stannous chloride to 50ml of ethylene glycol in turn, stir until fully dis...

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Abstract

Belonging to the technical field of semiconductor film preparation, the invention relates to a preparation method and application of a Cu2ZnSnS4/graphene composite semiconductor film. The preparation method includes: taking ethanol as the solvent, using a cupric chloride hydrate as the copper source, zinc chloride as the zinc source, stannous chloride as the tin source, and thiourea as the sulfur source, and adopting cetyl trimethylammonium bromide (CTAB) as the surfactant to prepare a reaction precursor solution; putting a cleaned FTO glass conductive surface up, adding an ethylene glycol solution of graphene dropwise, putting the FTO glass into a drying box to conduct drying, then putting the FTO glass conductive surface up into a high pressure reaction kettle lining, pouring the prepared reaction precursor solution into the high pressure reaction kettle lining, performing sealing, then putting the high pressure reaction kettle into a blasting drying box, and carrying out constant temperature reaction so as to obtain a Cu2ZnSnS4/graphene composite semiconductor film on the FTO conductive glass substrate. The method provided by the invention has a simple process and is low in cost. The prepared Cu2ZnSnS4/graphene composite semiconductor film has good application effect, can be directly used a counter electrode of a dye-sensitized solar cell, and also can be used as an absorption layer of a copper-based film solar cell.

Description

technical field [0001] The invention relates to a preparation method and application of a compound semiconductor thin film, in particular to a Cu 2 ZnSnS 4 The invention discloses a preparation method and application of a graphene / graphene composite semiconductor film, belonging to the technical field of semiconductor film preparation. Background technique [0002] Energy crisis and environmental pollution are two major crises facing mankind at present. The way to solve this problem is: on the one hand, energy conservation and emission reduction in traditional industries, and on the other hand, the development of renewable clean energy. Solar energy is the renewable resource with the greatest development potential, and the utilization of solar energy supported by solar photovoltaic technology is bringing revolutionary changes to the human energy consumption structure. [0003] In recent years, I 2 -II-IV-VI 4 Quaternary compound copper zinc tin sulfur (Cu 2 ZnSnS 4 , r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34H01G9/042H01L31/0224H01L31/04
CPCY02E10/542C03C17/347C03C2217/241C03C2217/288C03C2217/475C03C2218/111H01G9/042H01L31/0224H01L31/04
Inventor 庞洲骏招瑜魏爱香刘俊肖志明陈镇海
Owner GUANGDONG UNIV OF TECH
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