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Method for preparing absorption layer of CZTSSe thin film solar cell by co-evaporation

A thin-film solar cell, copper-zinc-tin-sulfur-selenium technology, which is used in circuits, electrical components, and final product manufacturing, can solve problems such as loss of Sn element, loss of Zn element, and difficulty in film composition, and achieve the effect of inhibiting re-evaporation.

Inactive Publication Date: 2016-06-15
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The currently used co-evaporation process uses simple metal Zn as the evaporation raw material. Since the evaporation temperature of metal Zn is lower than 500 ° C, when the substrate temperature reaches 500 ° C required for the preparation of copper-zinc-tin-sulfur-selenium materials, the deposited Zn will be removed from the surface of the film Re-evaporation causes the loss of Zn element; in addition, metal Sn reacts with S and Se to form binary phases SnSe and SnS that are also easy to re-evaporate from the substrate surface, which will lead to the loss of Sn element, and the film composition is difficult to control, etc. technical problem

Method used

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  • Method for preparing absorption layer of CZTSSe thin film solar cell by co-evaporation
  • Method for preparing absorption layer of CZTSSe thin film solar cell by co-evaporation
  • Method for preparing absorption layer of CZTSSe thin film solar cell by co-evaporation

Examples

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Embodiment 1

[0029] A method for preparing copper-zinc-tin-sulfur-selenium thin-film solar cell absorber layer by co-evaporation, using soda-lime glass as the substrate 11, and depositing a 1 μm thick Mo back electrode 12 on the substrate by magnetron sputtering; Copper-zinc-tin-sulfur-selenium absorbing layer is prepared on the electrode; the preparation process of the copper-zinc-tin-sulfur-selenium absorbing layer is: (1) the substrate of Mo plating is placed in the sample rack 4 of co-evaporation equipment chamber, and sample rack can be rotation; a substrate heating device 2 is placed above the substrate; Cu evaporation source 6, ZnS evaporation source 7, Sn evaporation source 8, and Se evaporation source 9 are evenly distributed under the evaporation chamber, and the inside of the evaporation source is equipped with a thermocouple for Monitor the evaporation temperature, and place evaporation source baffles 10 between the substrate and Cu, ZnS, Sn, Se evaporation sources; (2) Vacuumiz...

Embodiment 2

[0032] A stainless steel foil with a thickness of 40 μm was used as the substrate, and the other conditions were the same as in Example 1 to prepare a copper-zinc-tin-sulfur-selenium thin-film solar cell with a stainless steel substrate structure.

Embodiment 3

[0034] A titanium foil with a thickness of 40 μm was used as the substrate, and other conditions were the same as in Example 1 to prepare a copper-zinc-tin-sulfur-selenium thin-film solar cell with a titanium substrate structure.

[0035] This embodiment can effectively suppress the re-evaporation of the Zn element, obtain a copper-zinc-tin-sulfur-selenium film material with a composition close to the stoichiometric ratio, and promote the full diffusion and combination of elements in the film, thereby improving the crystal quality of the film and improving the copper-zinc-tin-sulfur selenium film material. Positive effects such as uniformity and optoelectronic properties of sulfur-selenide materials.

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Abstract

The invention relates to a method for preparing an absorption layer of a CZTSSe thin film solar cell by co-evaporation, belonging to the technical field of a thin film solar cell. The CZTSSe thin film solar cell is of a multi-layer structure. The method for preparing the absorption layer of the CZTSSe thin film solar cell by co-evaporation comprises the following steps of 1, placing a substrate plated with Mo in a co-evaporation device chamber, wherein Cu, ZnS, Sn and Se evaporation sources are arranged at the lower part of the evaporation chamber; 2, carrying out vacuum pumping of the evaporation chamber to be 3*10<-4>Pa, heating the substrate to 500 DEG C, heating all evaporation sources, and carrying out co-evaporation of Cu, ZnS, Sn and Se on an Mo back electrode; 3, stopping the heating of the Cu and ZnS evaporation sources, and carrying out co-evaporation of Sn and Se; and 4, stopping the heating of the Sn evaporation source until the temperature of the substrate is lower than 300 DEG C, stopping the heating of the Se evaporation source, and taking out the substrate after the substrate is cooled. The method has the advantages that a Zn element is effectively prevented from being evaporated again, a CZTSSe thin film material of which constituents are approximate to stoichiometric ratio is obtained, and the thin film is high in crystal quality and high in uniformity and photoelectric property.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, in particular to a method for co-evaporating an absorbing layer of a copper-zinc-tin-sulfur-selenium thin-film solar cell. Background technique [0002] At present, copper-zinc-tin-sulfur (CZTS) thin-film solar cells are considered to be one of the most promising directions among various compound semiconductor solar cells. Copper zinc tin sulfur is a p-type direct band gap quaternary compound semiconductor material with a kesterite or stannite structure, and its light absorption coefficient can reach 10 4 cm -1 , suitable for use as the absorbing layer of thin-film solar cells. Theoretical studies have shown that the limit photoelectric conversion efficiency of copper-zinc-tin-sulfur thin-film solar cells is as high as 32.2%. Compared with copper indium gallium selenide (CIGS) solar cells that use the rare element indium (In), zinc (Zn) and tin (Sn) materials used in copper zinc t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 杨亦桐王胜利李微赵彦民乔在祥
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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