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Method for preparing ultramicro boron-carbide powder by using waste slurry from fine grinding of sapphire

A fine grinding and boron carbide technology, which is applied in the field of preparing boron carbide ultrafine powder, can solve the problems of increasing sapphire processing cost, environmental protection, impurity increase, unusable and other problems, so as to avoid multi-stage crushing process, less pollution and reduce processing cost Effect

Active Publication Date: 2016-06-22
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During the grinding process, the boron carbide particles gradually become finer, the particle size gradually decreases, and the impurities increase greatly, which eventually causes the boron carbide abrasive to become a waste slurry and cannot be used any longer. This not only increases the cost of sapphire processing but also has a great impact on environmental protection. pressure

Method used

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  • Method for preparing ultramicro boron-carbide powder by using waste slurry from fine grinding of sapphire
  • Method for preparing ultramicro boron-carbide powder by using waste slurry from fine grinding of sapphire

Examples

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Effect test

Embodiment 1

[0039] The method for preparing boron carbide superfine powder with sapphire fine grinding waste slurry comprises the following steps:

[0040] Step 1, solid-liquid separation:

[0041] The sapphire waste slurry is finely ground for solid-liquid separation to obtain solid materials, wherein:

[0042] The solid-liquid separation adopts the centrifugation method, and the rotating speed of the centrifugation method is 2000r / min; in the obtained solid material, B 4 The particle size range of C is 0.1~15μm, D50≤5.0μm; the composition is by mass percentage: B 4 C: 85wt%, Fe: 5wt%, Al 2 o 3 : 10wt%;

[0043] Step 2, ball mill crushing:

[0044] The solid material is crushed by ball milling with water as the medium to obtain the crushed material with a particle size range of 0.1 to 5 μm, wherein: the ball milling parameters are: the mass ratio of solid material: water: steel ball is 1:2:2, and the diameter of the steel ball is 3~5mm, ball milling time is 5h;

[0045] Step 3, al...

Embodiment 2

[0063] The method for preparing boron carbide superfine powder with sapphire fine grinding waste slurry comprises the following steps:

[0064] Step 1, solid-liquid separation:

[0065] The sapphire waste slurry is finely ground for solid-liquid separation to obtain solid materials, wherein:

[0066] The solid-liquid separation adopts the gravity sedimentation method, and the sedimentation time of the gravity sedimentation method is 16h; in the obtained solid, B 4 The particle size range of C is 0.1~15μm, D50≤5.0μm; the composition is by mass percentage: B 4 C: 95wt%, Fe: 1wt%, Al 2 o 3 : 4wt%;

[0067] Step 2, ball mill crushing:

[0068] The solid material is crushed by ball milling with water as the medium to obtain the crushed material with a particle size range of 0.1 to 5 μm, wherein: the ball milling parameters are: the mass ratio of solid material: water: steel ball is 1:0.4:4, and the diameter of the steel ball is 2~5mm, ball milling time is 3h;

[0069] Step 3...

Embodiment 3

[0087] The method for preparing boron carbide superfine powder with sapphire fine grinding waste slurry comprises the following steps:

[0088] Step 1, solid-liquid separation:

[0089] The sapphire waste slurry is finely ground for solid-liquid separation to obtain solid materials, wherein:

[0090] The solid-liquid separation adopts the centrifugation method, and the rotating speed of the centrifugation method is 8000r / r / min; in the obtained solid material, B 4 The particle size range of C is 0.1~15μm, D50≤5.0μm; the composition is by mass percentage: B 4 C: 90wt%, Fe: 4wt%, Al 2 o 3 : 6wt%;

[0091] Step 2, ball mill crushing:

[0092] The solid material is crushed by ball milling with water as the medium to obtain a crushed material with a particle size range of 0.1 to 5 μm, wherein: the ball milling parameters are: the mass ratio of solid material: water: steel ball is 1:3:0.3, and the diameter of the steel ball is 6~10mm, ball milling time is 7h;

[0093] Step 3, ...

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Abstract

The invention discloses a method for preparing ultramicro boron-carbide powder by using waste slurry from fine grinding of sapphire, and belongs to the technical field of processing of ultra-hard materials. The method is mainly characterized in that the boron carbide from the waste slurry of fine grinding of the sapphire can be recovered by procedures of solid-liquid separation, crushing, purification, water separation and drying, and are used for preparing boron-carbide ultra-fine refractory materials, boron-carbide pressureless sintering materials and boron-carbide hot-pressing sintering materials. The method disclosed by the invention has the advantages that comprehensive recovery of the boron carbide in the waste slurry from fine grinding of the sapphire is realized, so that the environmental pollution is reduced and the processing cost of the sapphire is greatly reduced; the method for preparing the ultramicro boron-carbide powder by adopting the waste slurry as raw materials is provided, so that wastes are changed into valuables, and secondary utilization of resources is realized; in addition, due to finer granularity of the boron carbide in the waste slurry, the redundant multi-stage crushing procedure in the conventional ultramicro-powder processing process can be avoided, and the processing difficulty of the ultramicro powder is obviously reduced. The method disclosed by the invention has the advantages of short process, low energy consumption, less pollution, simple and easy implementation and strong practicability and the like.

Description

technical field [0001] The invention belongs to the technical field of superhard material processing, in particular to a method for preparing boron carbide superfine powder from sapphire fine grinding waste slurry. Background technique [0002] Sapphire is an aluminum oxide (α-Al 2 o 3 ) single crystal has excellent characteristics such as high hardness (Mohs hardness 9.0), high melting and boiling point, stable chemical properties, good electrical insulation, excellent optical properties and mechanical properties, and is widely used in infrared military devices, satellite space technology And high-intensity laser window materials, etc. In recent years, sapphire has been used as a semiconductor GaN / Al 2 o 3 The most ideal substrate material for light-emitting diodes (LEDs) is widely used in semiconductor LED lighting; in addition, sapphire, with its first-class strength, wear resistance, and scratch resistance, has begun to be gradually used in high-end mobile phones. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/563C04B35/66C04B35/626
CPCC04B35/563C04B35/62605C04B35/66C04B2235/5436C04B2235/5445
Inventor 李欣高帅波王帅王建飞邢鹏飞曹宝胜都兴红
Owner NORTHEASTERN UNIV
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