High-performance BiOCl/SnO2 heterojunction material and preparing method thereof

A heterojunction, high-performance technology, applied in chemical instruments and methods, chemical/physical processes, light water/sewage treatment, etc., can solve the problems of low photocatalytic efficiency and low energy conversion efficiency, and achieve a simple preparation method. The effect of easy operation, large specific surface area and good application prospect

Inactive Publication Date: 2016-07-06
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But currently SnO 2 Low energy conversion efficiency and low photocatalytic efficiency limit its application, so it is necessary to improve its photocatalytic performance

Method used

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  • High-performance BiOCl/SnO2 heterojunction material and preparing method thereof
  • High-performance BiOCl/SnO2 heterojunction material and preparing method thereof
  • High-performance BiOCl/SnO2 heterojunction material and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1) Dissolve 2.6221 g of tin tetrachloride and 0.98545 g of bismuth chloride in 125 ml of deionized water and stir until dissolved to obtain a mixed solution;

[0025] 2) Add 2.5g of PEG2000 into the above solution and stir for 1h;

[0026] 3) Place the mixed solution obtained in the above 2) in a water bath stirring device, stir at 50°C for 30 minutes, then add ammonia water with a mass fraction of 18% dropwise until the pH of the system is 8, and continue stirring for 24 hours to obtain a white precipitate thing;

[0027] 4) Suction filter the white precipitate obtained in 3), wash with distilled water and absolute ethanol three times respectively, dry the obtained product at 50°C, and then place it in a muffle furnace for calcination at 700°C for 3 hours to obtain BiOCl / SnO 2 Semiconductor nanoheterojunctions.

[0028] BiOCl / SnO prepared above 2 The X-ray diffraction pattern of semiconductor nanoheterojunction is as follows: figure 1 As shown, the diffraction peak...

Embodiment 2

[0031] 1) 1) 2.134g of tin tetrachloride and 1.5g of bismuth chloride were dissolved in 125ml of deionized water and stirred until dissolved to obtain a mixed solution;

[0032] 2) Add 2.0 g of PEG2000 into the above solution and stir for 1 h;

[0033] 3) Place the mixed solution obtained in the above 2) in a water bath stirring device, stir at 80°C for 20 minutes, then add ammonia water with a mass fraction of 18% dropwise until the pH value of the system is 7, and continue stirring for 24 hours to obtain a white precipitate thing;

[0034] 4) Suction filter the white precipitate obtained in 3), wash with distilled water and absolute ethanol three times respectively, dry the obtained product at 50°C, and then place it in a muffle furnace for calcination at 750°C for 3 hours to obtain BiOCl / SnO 2 Semiconductor nanoheterojunctions.

[0035] BiOCl / SnO prepared above 2 The transmission electron microscope spectrum of the semiconductor nano-heterojunction is as follows: image...

Embodiment 3

[0038] 1) 1.524g of tin tetrachloride and 2.156g of bismuth chloride were dissolved in 250ml of deionized water and stirred until dissolved to obtain a mixed solution;

[0039] 2) Add 2.5g of PEG1500 into the above solution and stir for 1h;

[0040]3) Place the mixed solution obtained in the above 2) in a water bath stirring device, stir at 60°C for 30 minutes, then add ammonia water with a mass fraction of 18% dropwise until the pH of the system is 7, and continue stirring for 24 hours to obtain a white precipitate thing;

[0041] 4) Suction filter the white precipitate obtained in 3), wash three times with distilled water and absolute ethanol respectively, dry the obtained product at 70°C, and then place it in a muffle furnace for calcination at 700°C for 4h to obtain BiOCl / SnO 2 Semiconductor nanoheterojunctions.

[0042] BiOCl / SnO prepared above 2 Photocatalytic performance test of semiconductor nano-heterojunction: 0.8g of BiOCl / SnO 2 The semiconductor nano-heterojunc...

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Abstract

The invention relates to a high-performance BiOCl / SnO2 heterojunction material and a preparing method and application thereof.The heterojunction material is prepared in the mode that SnO2 nanometer particles are attached to the surfaces of BiOCl single crystal nanometer sheets, the size of the SnO2 nanometer particles ranges from 5 nm to 30 nm, the width of the BiOCl single crystal nanometer sheets ranges from 20 nm to 500 nm, and the thickness of the BiOCl single crystal nanometer sheets ranges from 10 nm to 50 nm.The preparing method includes the steps that inorganic tin salt and inorganic bismuth salt serve as raw materials and are subjected to an one-step precipitation reaction and solid-liquid separation, dried, calcined and the like to obtain the BiOCl / SnO2 heterojunction material.By means of the BiOCl / SnO2 heterojunction material, the performance of single constituent elements can be developed, and the novel characteristic can be shown through the synergistic effect of heterojunctions.According to the preparing method, the one-step precipitation reaction method is adopted, the preparing method has the advantages that the process is simple, the growth condition is easy to control, energy consumption and cost are low, the preparation cycle is short, and the environment is friendly, the performance of the SnO2 materials can be improved, the obtained BiOCl / SnO2 heterojunction material can be used for degrading organic compounds in water, and particularly treatment of a trace of toxic, harmful and refractory organic compounds in water is achieved.

Description

technical field [0001] The invention relates to the technical field of nanomaterials and environmental chemical photocatalytic water treatment, in particular to a BiOCl / SnO 2 Semiconductor nano-heterojunction and its preparation method. Background technique [0002] Semiconductor nano-heterostructure materials, that is, the combination of two or more nano-materials with different chemical compositions, sizes, and shapes can realize a wide range of control over the energy band structure of materials, thereby further enriching the energy band structure of semiconductor materials. And physical and chemical properties, it can not only exert the functional characteristics of their respective components, but also produce new properties due to the combination of different components, because of its unparalleled excellent performance, it has become one of the most active research contents at present. It is used in optoelectronics, Research work in the fields of biomedical imaging, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/135B01J35/02C02F1/32
CPCB01J27/135B01J35/004B01J35/023C02F1/32C02F2101/308C02F2305/10
Inventor 乔秀清李东升赵君侯东芳吴亚盘董文文
Owner CHINA THREE GORGES UNIV
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