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Preparation method of semiconductor electrothermal film

An electrothermal film and semiconductor technology, which is applied in the field of semiconductor electrothermal film preparation, can solve the problems of insufficient bonding between the electrothermal film and the substrate, insufficient stability of the electrothermal film, and difficulty in controlling the sheet resistance, so as to achieve stable electrothermal conversion performance and low leakage current Small, the effect of improving electrical performance

Inactive Publication Date: 2016-07-06
顾伟
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The semiconductor electrothermal film preparation method in the prior art still has the following technical problems: the prepared electrothermal film is not stable enough, the electrothermal film is not tightly combined with the substrate, and it is easy to crack or fall off under the action of external force or thermal stress; the sheet resistance is difficult to control; the leakage current Larger and other defects

Method used

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  • Preparation method of semiconductor electrothermal film
  • Preparation method of semiconductor electrothermal film

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Effect test

Embodiment 1

[0030] (1) Cleaning the substrate: Clean the substrate with distilled water and dry it for later use;

[0031] (2) Prepare the source solution: weigh the following components by weight, mix them, heat to 50°C, and stir for 1-2 hours to obtain the source solution of the semiconductor electric heating film: 22 parts of tin tetrachloride, 15 parts of graphite, trichloride 10 parts of antimony, 6 parts of titanium tetrachloride, 1.0 part of fluoroboric acid, 0.4 part of fullerene, 0.5 part of sodium chloride, 1 part of water, 4 parts of toluene, 45 parts of ethanol;

[0032] (3) Spray the substrate: place the substrate in step (1) in the heating chamber, control the temperature of the heating chamber in the range of 450-500°C, and start to spray the semiconductor obtained in step (2) when the surface temperature of the substrate reaches about 350°C The electrothermal film source solution is atomized and sprayed onto the surface of the substrate;

[0033] (4) The first heat treatm...

Embodiment 2

[0037] (1) Cleaning the substrate: Clean the substrate with distilled water and dry it for later use;

[0038] (2) Prepare the source solution: weigh the following components by weight, mix them, heat to 75°C, and stir for 2 hours to obtain the source solution of the semiconductor electric heating film: 25 parts of tin tetrachloride, 20 parts of graphite, and 13 parts of antimony trichloride 4 parts of titanium tetrachloride, 0.9 part of fluoboric acid, 0.6 part of fullerene, 0.3 part of sodium chloride, 3 parts of water, 2 parts of toluene, 35 parts of ethanol;

[0039] (3) Spray the substrate: place the substrate in step (1) in the heating chamber, control the temperature of the heating chamber in the range of 500-550°C, and start to spray the semiconductor obtained in step (2) when the surface temperature of the substrate reaches about 400°C The electrothermal film source solution is atomized and sprayed onto the surface of the substrate;

[0040] (4) The first heat treatm...

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Abstract

The invention relates to a preparation method of a semiconductor electrothermal film. The method mainly comprises the following steps: cleaning a substrate; preparing a source solution, wherein the source solution is prepared from the following components in parts by weight: 20-30 parts of stannic chloride, 10-30 parts of graphite, 10-20 parts of antimony trichloride and the like; spraying the substrate; carrying out first thermal treatment; carrying out dipping for film formation; and carrying out second thermal treatment. The semiconductor electrothermal film prepared according to the preparation method has relatively high adhesive force on the substrate and is over 190N; the leakage current is smaller than 0.10mA; the electrothermal conversion efficiency is greater than or equal to 99%; the square resistance is 45-400ohm / square; and the lifetime is over 5,000 hours.

Description

technical field [0001] The invention belongs to the field of electric heating films, in particular to a preparation method of a semiconductor electric heating film. Background technique [0002] In recent years, traditional electric heating materials have been gradually replaced by new electric heating materials due to their shortcomings such as large amount of consumables, short service life, difficult processing and forming, and unstable working conditions. Among them, the semiconductor electrothermal film, because it can be tightly combined on the surface of the dielectric, becomes a thin-film semiconductor electrothermal material that becomes a planar heat source after being energized. It has the characteristics of high melting point, high hardness, low resistance, high thermal efficiency, and good chemical stability. It is resistant to acid and alkali, and has no open flame in the heating process. It has attracted people's attention in the field of electric heating and ...

Claims

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Application Information

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IPC IPC(8): H05B3/34H05B3/14
CPCH05B3/143H05B3/34H05B2203/013H05B2203/017
Inventor 顾伟
Owner 顾伟
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