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Method for producing internal member of dry etching chamber

A technology of dry etching and internal parts, applied in semiconductor/solid-state device manufacturing, electrical components, coatings, etc., can solve problems such as recording, no increase in argon flow, etc., and achieve high corrosion resistance and high corrosion resistance. Effect

Inactive Publication Date: 2016-07-20
KURASHIKI BORING KIKO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no description of increasing the flow rate of argon gas relative to hydrogen gas when thermal spraying is performed.

Method used

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  • Method for producing internal member of dry etching chamber
  • Method for producing internal member of dry etching chamber
  • Method for producing internal member of dry etching chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Yttrium oxide (Y) having a particle size distribution in the range of 10 to 20 μm and a particle size distribution peak with a purity of 99.9% was used 2 O 3 ) thermal spray material as raw material powder. Using argon and hydrogen as working gas, based on figure 1 The measured values ​​of the flow meters 34, 38 adjust the flow of the working gas to make Ar / H 2 The flow ratio was 7.6, and air plasma thermal spraying was performed on the aluminum circular plate. The output of the thermal sprayer was set at 32kW.

Embodiment 2

[0037] [Example 2] and [Comparative Examples 1 to 6]

[0038] In addition to changing the flow rate of argon gas and the flow rate of hydrogen gas as described in Table 1, Ar / H was changed respectively 2 Under the same conditions as in Example 1, except that the flow rate ratio of the The aluminum circular plate is thermally sprayed with air plasma.

[0039] After the treatment as described above, the aluminum disc after spraying was subjected to evaluation by visual confirmation, measurement of porosity by the following method, and evaluation of corrosion resistance by the following method.

[0040] [Measurement of porosity]

[0041] The yttrium oxide coatings formed in Examples 1 and 2 and Comparative Examples 1 to 6 were photographed with cross-sectional microstructure images of the sprayed coatings by an optical microscope, and the porosity was measured by image analysis (binarization) of the images.

[0042] [Corrosion resistance test]

[0043] Using an inductively co...

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Abstract

The invention provides a method for producing an internal member of a dry etching chamber that can be formed at the internal member of a dry etching chamber by means of a spray method that can easily implement a sprayed coating layer having high corrosion resistance and low porosity. The problem is solved by means of a method that, by means of plasma spraying, forms a yttria coating layer at a member used within a dry etching chamber. Using Ar gas and H2 gas as the working gas, by means of supplying Ar gas and H2 gas to a plasma sprayer in a manner such that the flow rate of Ar gas is 60-75 liters / min and the volume ratio of the flow rate of Ar gas / H2 gas is 6-8, and then increasing the flow rate of Ar gas with respect to H2 gas, the speed of a plasma jet is increased and the temperature of the plasma jet is decreased, a yttria fine powder having a particle size of 10-20 [mu]m as a starting material powder is introduced to the plasma jet, and the plasma jet containing melted yttria fine powder is jetted to the surface of the member.

Description

technical field [0001] The present invention relates to a method for producing an in-chamber member for dry etching in which a yttrium oxide coating is formed on a member in a chamber for dry etching (hereinafter referred to as an in-chamber member for dry etching or an in-chamber member). Background technique [0002] In a dry etching apparatus used in the manufacture of semiconductor devices, a cavity is filled with a halogen gas such as chlorine fluoride, and plasma of the halogen gas is generated in the cavity to etch the surface of a silicon wafer. Although the inner wall of the chamber, the gas supply part, the chamber member such as the shield, etc. are generally made of metal material such as aluminum or aluminum alloy, the metal material is corroded by the plasma of the halogen gas. [0003] In order to prevent corrosion of the cavity member, as shown in Patent Document 1, it is known to form a coating layer of yttrium oxide on the surface of the cavity member by th...

Claims

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Application Information

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IPC IPC(8): C23C4/134B05B7/20C23C4/11H01L21/3065
CPCB05B7/20C23C4/11C23C4/134
Inventor 峪田宜明曾珍素佐古纱雅香
Owner KURASHIKI BORING KIKO
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