Preparation method of aluminum nitride coating adjustable in relative permittivity

A technology of dielectric coefficient and aluminum nitride, which is applied in the field of preparing AlN coating with adjustable relative permittivity on the surface of copper-carbon alloy substrate, can solve the problems of limited applicability and achieve low dielectric loss and high thermal conductivity film -Effect of base binding

Inactive Publication Date: 2016-07-27
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It should be pointed out that the AlN dielectric coating prepared in the above research report has a relative permittivity of about 10, and its applicability to electronic devices with different frequency bands is limited.

Method used

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  • Preparation method of aluminum nitride coating adjustable in relative permittivity
  • Preparation method of aluminum nitride coating adjustable in relative permittivity
  • Preparation method of aluminum nitride coating adjustable in relative permittivity

Examples

Experimental program
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Effect test

Embodiment 1

[0055] 1. Substrate pretreatment: (1) Solvent cleaning treatment. First use isopropanol to ultrasonically clean for 10 minutes, then use 98% alcohol solution to ultrasonically clean for 10 minutes, and then use ultrapure water to ultrasonically clean for 3 minutes after taking it out. (2) Ion source bombardment cleaning treatment. The substrate was cleaned by Hall ion source for 5 min, and the ambient pressure was 2.2×10 -2 Pa, Ar flow rate is 11.5sccm, substrate bias voltage is -180V, cathode current is 22.5A, cathode voltage is 32.5V, anode current is 6.2A, anode voltage is 65V.

[0056] 2. Deposit the metal Cr transition layer on the surface of the copper-carbon alloy substrate by pulse DC sputtering

[0057] (1) Pretreatment of metal Cr, Al and ceramic BN targets. The working temperature of the deposition chamber is heated to 250° C., the substrate is heated to 350° C., and the gas in the deposition chamber is extracted. Heat and bake the cavity for a long time to remo...

Embodiment 2

[0062] 1. Substrate pretreatment: (1) Solvent cleaning treatment. With embodiment 1. (2) Ion source bombardment cleaning treatment. With embodiment 1.

[0063]2. Depositing a metallic Cr transition layer by magnetron sputtering on the surface of the copper-carbon alloy substrate: (1) Target pre-sputtering. With embodiment 1. (2) Depositing a metal transition layer. With embodiment 1.

[0064] 3. Deposition of AlN-BN nanocomposite structure coating: After the metal Cr transition layer is deposited, maintain the chamber temperature at 200°C and the substrate at 250°C, and rotate the sample stage so that the copper-carbon alloy substrate is placed between the metal Al target and the BN The middle position of the target, and the distance from the two targets is 200mm. At this time, N 2 gas, adjust the flow rate so that Ar gas and N 2 The total gas flow is 50sccm, N 2 The partial pressure ratio is 30%. Adjust the pressure of the deposition chamber to 0.35Pa, use an interme...

Embodiment 3

[0068] 1. Substrate pretreatment: 1) Solvent cleaning treatment. Same as Example 1. 2) Ion source bombardment cleaning treatment. With embodiment 1.

[0069] 2. Depositing a metallic Cr transition layer by magnetron sputtering on the surface of the copper-carbon alloy substrate: (1) Target pre-sputtering. With embodiment 1. (2) Depositing a metal transition layer. With embodiment 1.

[0070] 3. Deposition of AlN-BN nanocomposite structure coating: After the metal Cr transition layer is deposited, maintain the chamber temperature at 200°C and the substrate at 250°C, and rotate the sample stage so that the copper-carbon alloy substrate is placed between the metal Al target and the BN The middle position of the target, and the distance from the two targets is 200mm. At this time, N 2 gas, adjust the flow rate so that Ar gas and N 2 The total gas flow is 50sccm, N 2 The partial pressure ratio is 30%. Adjust the pressure of the deposition chamber to 0.35Pa, use an intermedi...

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Abstract

The invention relates to a preparation method of an aluminum nitride coating adjustable in relative permittivity and relates to copper-carbon alloy surface treatment. The preparation method includes the steps of (1), depositing a Cr transition layer on a copper-carbon alloy surface by means of direct-current pulse sputtering; (2), twinning a cathode Al target and a cathode BN target by means of medium-frequency power supply co-sputtering to obtain an AlN-BN coating of a nano-composite structure; (3), depositing an AlN monofilm and a BN monofilm by alternate reactive sputtering so as to complete preparation of the AlN coating adjustable in relative permittivity based on the copper-carbon alloy substrate surface. The aluminum nitride coating adjustable in relative permittivity has the advantages of adjustability in relative permittivity, low dielectric loss, high insulativity, high thermal conductivity, good film-substrate adhesion performance and the like.

Description

technical field [0001] The invention relates to copper-carbon alloy surface treatment, in particular to a method for preparing an AlN coating with adjustable relative permittivity on the surface of a copper-carbon alloy substrate. Background technique [0002] In the field of integrated circuits, due to the rapid increase in integration, the heat generated by the chip rises sharply, and the life of the chip decreases rapidly. Thermal fatigue and thermal stress caused by thermal expansion coefficient mismatch, so the packaging material must meet the requirements of excellent heat dissipation and matching the thermal expansion coefficient of silicon materials [1]. The key to solving this problem is to carry out reasonable encapsulation. Judging from the current development trend of electronic packaging technology, various packaging materials with a single substrate cannot meet the comprehensive requirements of various performances, while metal matrix composite materials can m...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/06C23C14/16
CPCC23C14/0036C23C14/0617C23C14/0647C23C14/165C23C14/3464C23C14/3485C23C28/32C23C28/34
Inventor 王周成吴正涛张东方魏斌斌
Owner XIAMEN UNIV
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