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A kind of preparation method of copper-zinc-tin-sulfur film

A copper-zinc-tin-sulfur and thin-film technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problems of evaporation source pollution, low utilization rate of evaporation source materials, poor reproducibility, etc.

Inactive Publication Date: 2017-12-22
YUNNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the quality of the film prepared by vacuum evaporation is high, but the biggest problem of this technology is the low utilization rate of the evaporation source material, and the pollution between the evaporation sources in the evaporation chamber is serious.
However, the prefabricated layer of copper, zinc, tin and sulfur prepared by vacuum sputtering is easy to control the film thickness, and there is no pollution of various targets in the chamber, but there are problems such as incomplete replication between the prefabricated layer components and target components, and poor reproducibility. question

Method used

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  • A kind of preparation method of copper-zinc-tin-sulfur film
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  • A kind of preparation method of copper-zinc-tin-sulfur film

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Effect test

Embodiment 1

[0023] (1) Substrate cleaning: Clean the soda-lime glass sequentially with detergent, acetone, alcohol, deionized water, soak in potassium dichromate solution for 30 minutes, and dry it with nitrogen for later use;

[0024] (2) Put the cleaned soda-lime glass into the sputtering chamber, and vacuum the background to 5.0×10 -4 Pa, direct current sputtering of Mo electrodes with a multilayer structure, the substrate temperature is room temperature, the sputtering power is 200W, and the sputtering pressure is 1.5Pa (20 minutes), 0.3Pa (60 minutes), and 1μm is obtained on the soda lime glass. Thick Mo electrodes. After plating the Mo electrodes, raise the temperature to 220°C and bake for 30 minutes.

[0025] (3) Preparation of copper-zinc-tin-sulfur prefabricated layer: three-target RF sputtering using CuS target with Cu:S=1:1, SnS target with Sn:S=1:1 and ZnS target with Zn:S=1:1 Injection, background vacuum 5.0×10 -4 Pa, sputtering power 50W, substrate temperature at room te...

Embodiment 2

[0029] (1) Substrate cleaning: Clean the soda-lime glass sequentially with detergent, acetone, alcohol, deionized water, soak in potassium dichromate solution for 30 minutes, and dry it with nitrogen for later use;

[0030] (2) Put the cleaned soda-lime glass into the sputtering chamber, and vacuum the background to 5.0×10 -4 Pa, direct current sputtering of Mo electrodes with a multilayer structure, the substrate temperature is room temperature, the sputtering power is 200W, and the sputtering pressure is 1.5Pa (20 minutes), 0.3Pa (60 minutes), and 1μm is obtained on the soda lime glass. Thick Mo electrodes. After plating the Mo electrodes, raise the temperature to 220°C and bake for 30 minutes.

[0031] (3) Preparation of copper-zinc-tin-sulfur prefabricated layer: three-target RF sputtering using CuS target with Cu:S=1:1, SnS target with Sn:S=1:1 and ZnS target with Zn:S=1:1 Injection, background vacuum 5.0×10 -4 Pa, sputtering power 50W, substrate temperature at room te...

Embodiment 3

[0035] (1) Substrate cleaning: Clean the soda-lime glass sequentially with detergent, acetone, alcohol, deionized water, soak in potassium dichromate solution for 30 minutes, and dry it with nitrogen for later use;

[0036] (2) Put the cleaned soda-lime glass into the sputtering chamber, and vacuum the background to 5.0×10 -4Pa, direct current sputtering of Mo electrodes with a multilayer structure, the substrate temperature is room temperature, the sputtering power is 200W, and the sputtering pressure is 1.5Pa (20 minutes), 0.3Pa (60 minutes), and 1μm is obtained on the soda lime glass. Thick Mo electrodes. After plating the Mo electrodes, raise the temperature to 220°C and bake for 30 minutes.

[0037] (3) Preparation of copper-zinc-tin-sulfur prefabricated layer: three-target RF sputtering using CuS target with Cu:S=1:1, SnS target with Sn:S=1:1 and ZnS target with Zn:S=1:1 Injection, background vacuum 5.0×10 -4 Pa, sputtering power 50W, substrate temperature at room tem...

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Abstract

The invention relates to a preparation method for preparing a copper-zinc-tin-sulfur (CZTS) film through the target layer-by-layer sputtering process of binary compounds. Compared with the traditional multi-target (a unitary target or the combination of the unitary target and a binary target) step-by-step sputtering technique or the multi-target (the unitary target or the binary target) co-sputtering technique, the above method is conducted based on the CZTS formation mechanism of 2CuS+SnS=Cu2SnS3 and Cu2SnS3+ZnS+S(g)=Cu2ZnSnS4, wherein the sputtering based on only one CuS target, one SnS target and one ZnS target is conducted to obtain a CZTS prefabricated layer and then a CZTS film is obtained through the subsequent vulcanizing and annealing process. The preparation method is simple in process, high in film-forming efficiency, flat in formed film and high in compactness. Meanwhile, during the vulcanizing and annealing process of the prefabricated layer, the generation of copper-sulfide phases (Cu2-xS) and tin-sulfide phases (Sn2-xS) can be effectively inhibited. At the same time, the formation of molybdenum sulfide (MoS2) through the reaction of S and Mo can be effectively controlled. Therefore, the uniformity of the CZTS film is greatly improved and the single-phase CZTS film can be obtained.

Description

technical field [0001] The invention relates to a method for preparing a copper-zinc-tin-sulfur thin film by layer-by-layer sputtering of multiple targets and three targets, which is used for preparing an absorbing layer of a thin-film solar cell, and belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] A novel quaternary compound semiconductor copper zinc tin sulfur (Cu 2 ZnSnS 4 , abbreviated as CZTS) and copper indium gallium selenide (CuInGaSe 2 , abbreviated CIGS) all belong to the chalcopyrite structure, the difference is that CZTS is composed of tin (Sn) and zinc (Zn) instead of gallium (Ga) and indium (In) in CIGS, and sulfur (S) instead of selenium (Se). , does not contain rare and noble elements (In and Ga) and toxic elements (Se). Compared with CIGS, the band gap (1.5eV) of CZTS matches the solar spectrum more closely, and CZTS has the same excellent light absorption coefficient as CIGS (greater than 10...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 郝瑞亭刘思佳任洋赵其琛王书荣蒋志李志山杨敏陆熠磊
Owner YUNNAN NORMAL UNIV