A kind of manufacturing method of ingaasp material buried waveguide structure superluminescence light-emitting diode chip

Abstract

The invention discloses a method for manufacturing a super-radiation light-emitting diode having an InGaAsP material buried waveguide structure. The method comprises the steps: sequentially growing a buffering layer, a lower restraining layer, a multi-quantum-well active region, an upper restraining layer and a P-type ohmic contact layer on a sulfur-doped InP (indium phosphide) substrate through employing the MOCVD epitaxial growth technology, and forming a primary epitaxial wafer; carrying out the etching of the primary epitaxial wafer to form a ridge, carrying out the long-time braking of the primary epitaxial wafer in an MOCVD reaction chamber at high temperature under the protection condition of big-flow PH3 gas, cooling the primary epitaxial wafer to low temperature, and then carrying out the buried growth of a side surface of the ridge through employing the MOCVD epitaxial growth technology; generating a highly-doped coverage layer and a highly-doped contact layer through the MOCVD epitaxial growth technology; and forming the super-radiation light-emitting diode through photoetching, etching, sputtering, alloying, scribing and splitting. The method is characterized in that an interface growing from the material is small in number of defects and is reliable in quality; the manufactured device is high in reliability, is high in power, is wide in spectrum, and is good in high-temperature work performance.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a method for manufacturing an InGaAsP material buried waveguide structure superluminescent diode chip. Background technique [0002] A superluminescent light-emitting diode is a device that spontaneously amplifies radiated light. Its light-emitting mechanism is a directional radiation phenomenon under a strong excitation state. Its photoelectric characteristics are between lasers and light-emitting diodes. The advantages of light-emitting diodes such as wide spectrum characteristics have been widely used in the fields of fiber optic gyroscope (FOG), optical coherence tomography (OCT) imaging technology and optical fiber communication. [0003] In the design of the waveguide structure of superluminescent tubes, the ridge waveguide (RWG) structure is usually used, which has the advantages of simple process and good reliability, but because the RWG structure is a weak refrac...

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Problems solved by technology

[0003] In the design of the waveguide structure of superluminescent tubes, the ridge waveguide (RWG) structure is usually used, which has the advantages of simple process and good reliability, but because the RWG structure is a weak refractive index waveguide, and on the side of the active layer, There is no effective optical field limitation, and the large far-field divergence angle in the material growth direction makes the fiber coupling power loss large and the fiber output power low

At the same time, there is no limit to the injection current, because the leakage current cannot be controlled, so it is not as good as the ridge-type buried waveguide structure in terms of threshold current, far-field characteristics, and reliability.

[0004] However, the ridge-type buried structure is used to confine the light field mode in the buried light-emitting region, which can better confine the current, and at the same time form a lateral refractive index-guided waveguide effect, and the resulting chip has a smaller Threshold current, near-circular spot, stable mode and smaller thermal resistance, but in the process of etching an epitaxial wafer to form a ridge using reactive ion etching technology and chemical etching method wet selective etching technology, the etching process will In the active area of ​​quaternary material, due to the difference in the lateral and vertical etching rates of epitaxial materials, and the etching rate of quaternary material (InGaAsP) is faster than that of binary material (InP); the active area is a quaternary material area, with the etching depth The increase of the ridge will form pits along the side of the ridge, which will cause unevenness on the side of the ridge. When the ridge is buried and grown, it is easy to form a cavity, that is, there are defects, which brings difficulties to the quality of the secondary epitaxial growth.

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