Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination

An etching solution and stacking technology, which is applied in the field of copper-molybdenum laminated film etching of thin film transistors, can solve the problems of difficult rate control, fast copper etching, and large environmental hazards, and achieve small loss of critical size, stable etching angle, and easy reaction The effect of control

Inactive Publication Date: 2016-08-31
HANGZHOU GREENDA CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this etching solution has obvious disadvantages, copper etching is too fast, rate control is difficult, and galvanic cell effect is prone to occur; publication numbers CN105316679A and CN102703902A disclose etching solutions containing hydrogen peroxide, from the current mass-produced copper wire manufacturing process and In terms of production yield, this hydrogen peroxide-containing matrix has obvious advantages, but at the same time there are many problems: the hydrogen peroxide itself is unstable and easy to decompose;

Method used

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  • Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination
  • Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination

Examples

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Effect test

Embodiment 1

[0037] Example 1 The components and weight percentages of the hydrogen peroxide etching solution used for TFT copper-molybdenum lamination are: 20% hydrogen peroxide, 0.5% sulfuric acid, 1.2% potassium dihydrogen phosphate, 1.5% hydrogen peroxide stabilizer, metal Chelating agent 2%, metal corrosion inhibitor 1% and balance water. The hydrogen peroxide stabilizer is polyacrylamide, the metal chelating agent is iminodiacetic acid, and the metal corrosion inhibitor is imidazole.

Embodiment 2

[0039] Example 2 The components and weight percentages of the hydrogen peroxide-based etching solution used for TFT copper-molybdenum lamination are: 20% hydrogen peroxide, 1% sulfuric acid, 2% potassium phosphate, 1.5% hydrogen peroxide stabilizer, metal chelating agent 2%, metal corrosion inhibitor 1%, and the balance water. The hydrogen peroxide stabilizer is polyacrylamide, the metal chelating agent is iminodiacetic acid, and the metal corrosion inhibitor is imidazole.

Embodiment 3

[0041] Example 3 The components and weight percentages of the hydrogen peroxide-based etching solution used for TFT copper-molybdenum lamination are: 15% hydrogen peroxide, 2% sulfuric acid; 2.5% ammonium phosphate, 1.5% hydrogen peroxide stabilizer, and metal chelating agent 2%, metal corrosion inhibitor 1.5% and the balance water. The hydrogen peroxide stabilizer is polyacrylamide, the metal chelating agent is iminodiacetic acid, and the metal corrosion inhibitor is imidazole.

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Abstract

The invention relates to the technical field of thin film transistor copper-molybdenum lamination etching, in particular to a TFT copper-molybdenum lamination film etching liquid composition. For the total weight of the composition, the composition comprises the following components: 1-30% of hydrogen peroxide by weight, 0.01-8% of hydrogen peroxide stabilizing agent by weight, 0.5-8% of phosphates by weight, 0.1-8% of inorganic acid by weight, 1-10% of metal chelating agent by weight, 0.01-5% of metal corrosion inhibitor by weight, and the balance of water. The etching liquid composition contains no fluorochemicals, so that the corrosion of a glass substrate or a silicon plate cannot be generated, no environmental pollution is generated, and the reaction is mild and easy to control; the metal chelating agent can generate copper-molybdenum ions through chelating to prevent decomposition of hydrogen peroxide from causing the life shortening and the production line danger; the copper-molybdenum etching speed is autonomously adjusted through primary cell reaction by phosphates; and the metal corrosion inhibitor is matched to prevent the copper shrinkage or the molybdenum shrinkage, so that the etching process is stable, the etching speed is proper, the etching angle is stabilized at 30-60 degrees, the critical size loss is low, and the later copper production performance is improved.

Description

technical field [0001] The invention relates to the technical field of etching copper-molybdenum laminated films of thin-film transistors, in particular to a TFT copper-molybdenum laminated film etchant composition. Background technique [0002] Thin film transistor (TFT) liquid crystal display is an active matrix display formed by introducing a thin film transistor switch into a twisted nematic liquid crystal display. Commonly, amorphous silicon is usually used in the TFT layer as the wire material of the gate electrode and the original electrode / drain electrode, and aluminum or its alloys and other metals such as molybdenum are sequentially laminated as the metal layer. As the size of LCD TVs continues to increase, the demand for large-sized panels continues to increase. However, a display screen with a metal resistivity of the grid and data lines above 18 inches will seriously affect the picture quality. The wiring material based on aluminum (including pure aluminum, al...

Claims

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Application Information

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IPC IPC(8): C23F1/44C23F1/18C23F1/26
CPCC23F1/44C23F1/18C23F1/26
Inventor 洪明卫邢攸美李盈盈高立江
Owner HANGZHOU GREENDA CHEM
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