Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination

Abstract

The invention relates to the technical field of thin film transistor copper-molybdenum lamination etching, in particular to a TFT copper-molybdenum lamination film etching liquid composition. For the total weight of the composition, the composition comprises the following components: 1-30% of hydrogen peroxide by weight, 0.01-8% of hydrogen peroxide stabilizing agent by weight, 0.5-8% of phosphates by weight, 0.1-8% of inorganic acid by weight, 1-10% of metal chelating agent by weight, 0.01-5% of metal corrosion inhibitor by weight, and the balance of water. The etching liquid composition contains no fluorochemicals, so that the corrosion of a glass substrate or a silicon plate cannot be generated, no environmental pollution is generated, and the reaction is mild and easy to control; the metal chelating agent can generate copper-molybdenum ions through chelating to prevent decomposition of hydrogen peroxide from causing the life shortening and the production line danger; the copper-molybdenum etching speed is autonomously adjusted through primary cell reaction by phosphates; and the metal corrosion inhibitor is matched to prevent the copper shrinkage or the molybdenum shrinkage, so that the etching process is stable, the etching speed is proper, the etching angle is stabilized at 30-60 degrees, the critical size loss is low, and the later copper production performance is improved.

Description

technical field [0001] The invention relates to the technical field of etching copper-molybdenum laminated films of thin-film transistors, in particular to a TFT copper-molybdenum laminated film etchant composition. Background technique [0002] Thin film transistor (TFT) liquid crystal display is an active matrix display formed by introducing a thin film transistor switch into a twisted nematic liquid crystal display. Commonly, amorphous silicon is usually used in the TFT layer as the wire material of the gate electrode and the original electrode / drain electrode, and aluminum or its alloys and other metals such as molybdenum are sequentially laminated as the metal layer. As the size of LCD TVs continues to increase, the demand for large-sized panels continues to increase. However, a display screen with a metal resistivity of the grid and data lines above 18 inches will seriously affect the picture quality. The wiring material based on aluminum (including pure aluminum, al...

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Problems solved by technology

However, this etching solution has obvious disadvantages, copper etching is too fast, rate control is difficult, and galvanic cell effect is prone to occur; publication numbers CN105316679A and CN102703902A disclose etching solutions containing hydrogen peroxide, from the current mass-produced copper wire manufacturing process and In terms of production yield, this hydrogen peroxide-containing matrix has obvious advantages, but at the same time there are many problems: the hydrogen peroxide itself is unstable and easy to decompose; Decomposition, unstable etching process, uneven etching, shortened service life of etching solution, and risk of explosion

This makes the corrosion ability strong, and it is often difficult to control the etching angle and etching time, and at the same time, it will affect the corrosion of the base glass

A large amount of fluorine-containing wastewater is produced in the production line, which is not conducive to the health of operators. If it is not properly treated, it will cause great environmental hazards and high treatment costs

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