Multi-stage magnetic field arc ion plating method for lining positive bias straight pipe
An arc ion plating and positive bias technology, applied in the field of material surface treatment, can solve problems such as large particle defects and low arc plasma transmission efficiency, improve crystal structure and stress state, avoid large particle defects, and improve bonding strength. Effect
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[0015] Specific embodiment one: the following combination figure 1 This embodiment will be described. The device used in the multi-stage magnetic field arc ion plating method lined with a positive bias straight tube in this embodiment includes a bias power source 1, an arc power source 2, an arc ion plating target source 3, a multi-stage magnetic field device 4, and a multi-stage magnetic field device. Level magnetic field power supply 5, lined positive bias straight tube device 6, positive bias power supply 7, sample stage 8, bias power supply waveform oscilloscope 9 and vacuum chamber 10;
[0016] The method includes the following steps:
[0017] Step 1. Place the workpiece to be processed on the sample stage 8 in the vacuum chamber 10, the workpiece is connected to the output end of the bias power supply 1, and the arc ion plating target source 3 installed on the vacuum chamber 10 is connected to the output end of the arc power supply 2. , The magnetic fields of all levels...
Example Embodiment
[0026] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the method further includes:
[0027] Step 3: The pure metal thin film can be prepared by combining traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulse cathode arc with DC bias, pulse bias or DC pulse compound bias for film deposition , Compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structure.
Example Embodiment
[0028] Embodiment 3: The difference between this embodiment and Embodiment 2 is that steps 1 to 3 are repeatedly performed to prepare multilayer structure films with different stress states, microstructures and element ratios. Others are the same as Embodiment 2.
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