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Manufacturing method of high-strength micro-fine silver alloy bonding wire for small-chip LED packaging

A technology of LED packaging and silver alloy bonding, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effect of improving alloy consistency, reducing costs, and optimizing the entrance angle

Active Publication Date: 2017-08-18
ZHEJIANG TONY ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a high-strength micro-bonding silver alloy wire for small chip LED packaging and its manufacturing method, which can solve the shortcomings of the existing bonding silver alloy wire and meet the use requirements of small chip LED packaging

Method used

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  • Manufacturing method of high-strength micro-fine silver alloy bonding wire for small-chip LED packaging

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] The manufacturing method of high-strength micro-bonding silver alloy bonding wire is as follows:

[0013] (1) Smelting and continuous casting of silver alloy bonding wire billets: a. Manufacture of Ag / Ni master alloy: layer Ag with a mass fraction of 90% and Ni with a mass fraction of 10% into the boron nitride crucible of the vacuum intermediate frequency melting furnace, and vacuum the hearth of the vacuum intermediate frequency melting furnace, and the vacuum degree is higher than 3.0 ×10 -2 After Pa, the temperature starts to rise to 1450°C, and the vacuum degree in the melting process is higher than 3.0×10 -2 Pa, then let it stand for 10 minutes, after the Ag / Ni alloy is completely dissolved and the metal liquid becomes clear, fill the Ag / Ni alloy liquid with Ar through a boron nitride tube and stir for 5 minutes, then pour the alloy into a water-cooled mold to cool , to obtain the Ag / Ni master alloy; press the Ag / Ni master alloy into a thin plate with a thicknes...

Embodiment 2

[0015] The manufacturing method of high-strength fine silver-gold alloy bonding wire is as follows:

[0016] (1) Smelting and continuous casting of silver alloy bonding wire billets: a. Manufacture of Ag / Ni master alloy: layer Ag with a mass fraction of 90% and Ni with a mass fraction of 10% into the boron nitride crucible of the vacuum intermediate frequency melting furnace, and vacuum the hearth of the vacuum intermediate frequency melting furnace, and the vacuum degree is higher than 3.0 ×10 -2 After Pa, the temperature starts to rise to 1650°C, and the vacuum degree in the melting process is higher than 3.0×10 -2 Pa, then let it stand for 15 minutes, after the Ag / Ni alloy is completely dissolved and the molten metal becomes clear, fill the Ag / Ni alloy liquid with Ar through a boron nitride tube and stir for 8 minutes, then pour the alloy into a water-cooled mold to cool , to obtain the Ag / Ni master alloy; press the Ag / Ni master alloy into a thin plate with a thickness of...

Embodiment 3

[0018] The manufacturing method of high-strength fine silver-gold alloy bonding wire is as follows:

[0019](1) Smelting and continuous casting of silver alloy bonding wire billets: a. Manufacture of Ag / Ni master alloy: layer Ag with a mass fraction of 90% and Ni with a mass fraction of 10% into the boron nitride crucible of the vacuum intermediate frequency melting furnace, and vacuum the hearth of the vacuum intermediate frequency melting furnace, and the vacuum degree is higher than 3.0 ×10 -2 After Pa, the temperature starts to rise to 1850°C, and the vacuum degree in the melting process is higher than 3.0×10 -2 Pa, then let it stand for 20 minutes, after the Ag / Ni alloy is completely dissolved and the metal liquid becomes clear, fill the Ag / Ni alloy liquid with Ar through a boron nitride tube and stir for 10 minutes, then pour the alloy into a water-cooled mold to cool , to obtain the Ag / Ni master alloy; press the Ag / Ni master alloy into a thin plate with a thickness of...

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Abstract

The invention discloses a manufacturing method of a high-strength micro-fine silver alloy bonding wire for small wafer LED packaging. The manufacturing method comprises the following steps that 1, smelting and continuous casting of a silver alloy bonding wire blank are conducted; 2, drawing of a silver alloy wire is conducted; 3, intermediate heat treatment of the silver alloy wire is conducted; 4, the silver alloy wire subjected to intermediate heat treatment is manufactured into a silver alloy wire body with the diameter being 1.0-1.5 mm through a wire drawing machine in a drawing mode; 5, intermediate heat treatment of a fine silver alloy wire is conducted; and 6, the fine silver alloy wire subjected to intermediate heat treatment is manufactured into the silver alloy wire with the diameter being 0.06-0.08 mm through the wire drawing machine in a drawing mode. According to the manufacturing method of the high-strength micro-fine silver alloy bonding wire for small wafer LED packaging, the defects of low strength and poor oxidation resistance of a bonding silver wire and other bonding silver alloy wires are overcome by optimizing alloy components; by using the vacuum melting ultrasonic vibration continuous casting technology, a high-quality alloy wire blank is obtained; the alloy structure in the machining process is controlled through appropriate intermediate heat treatment, and local stress concentration during wire drawing is reduced; and the inlet angle of a wire drawing die is further optimized, wire breaking times in the wire drawing process are decreased, and the finished product rate of the micro-fine silver alloy bonding wire is ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and mainly relates to a high-strength micro-bonded silver alloy wire for small-chip LED packaging and a manufacturing method thereof. Background technique [0002] The bonding wire plays the role of connecting the silicon chip electrode and the external lead frame of the lead frame, and transmits the chip's electrical signal and dissipates the heat generated in the chip. It is a key material for integrated circuit packaging. Wire bonding is a concentrated expression of the extremely small feature size and the extremely high yield of semiconductor production. The former is reflected in the shrinking lead pitch, and the latter is reflected in the gradually increasing production efficiency. Fine-pitch bonding requires higher strength and rigidity connections. By controlling the length of the free air ball (Free AirBall) and the heat-affected zone (Heat Affect Zone) to meet the needs ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C5/06C22C1/03C22C1/02C22F1/02C22F1/14B22D11/053B21C1/02H01L33/62
CPCB21C1/02B22D11/053C22C1/02C22C1/03C22C5/06C22F1/02C22F1/14H01L33/62H01L2933/0066
Inventor 曹军胡鹏何芳范俊玲王福荣
Owner ZHEJIANG TONY ELECTRONICS CO LTD