Preparation method of high quality p-type cuprous oxide film

A cuprous oxide, high-quality technology, applied in copper oxide/copper hydroxide and other directions, can solve the problems of unfavorable large-scale industrial production, uneven film thickness distribution, low film density, etc., and achieves abundant storage capacity and simple method. Feasible, large grain size effect

Inactive Publication Date: 2016-09-28
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the cuprous oxide film grown by physical method has the disadvantages of small grain size and low film density.
Electrochemical deposition can deposit cuprous oxide film with good crystal quality, but it has the disadvantages of slow growth rate and uneven film thickness distribution, which is not conducive to large-scale industrial production

Method used

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  • Preparation method of high quality p-type cuprous oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] 1) Cut a copper sheet with a purity of 99.999% and a thickness of 0.01mm to a size of 20mm×20mm, prepare a nitric acid solution with a mass fraction of 20%, and clean the copper sheet with tweezers in nitric acid for 30 seconds, then use deionized water Rinse well and blow dry with nitrogen gas for later use.

[0015] 2) Put the cleaned copper piece in the quartz boat and put it into the tube furnace, first use the mechanical pump to pump out the air, then pass in the argon, repeat several times until the air is completely removed, turn off the mechanical pump, and keep the argon in . Raise the temperature to 1050°C at a rate of 15°C / min, and keep it warm for one hour.

[0016] 3) At a temperature of 1050°C, stop feeding argon, start feeding air into one end of the tube furnace, and use a mechanical pump to pump air at the other end to make the air flow unimpeded, and keep warm for one hour.

[0017] 4) At a temperature of 1050° C., repeat the steps in step 2), and ke...

Embodiment 2

[0021] 1) Cut a copper sheet with a purity of 99.999% and a thickness of 0.2mm to a size of 10mm×10mm, prepare a nitric acid solution with a mass fraction of 20%, and clean the copper sheet in nitric acid for 30 seconds with tweezers, and then use deionized water Rinse well and blow dry with nitrogen gas for later use.

[0022] 2) Put the cleaned copper sheet in the quartz boat and put it into the tube furnace, first use the mechanical pump to pump out the air, then pass in the argon, repeat several times until the air is completely removed, turn off the mechanical pump, and keep the argon in . Raise the temperature to 1100°C at a rate of 15°C / min, and keep it warm for one hour.

[0023] 3) At a temperature of 1100°C, stop feeding argon, start feeding air into one end of the tube furnace, and use a mechanical pump to pump air at the other end to make the air flow unimpeded, and keep warm for one hour.

[0024] 4) At a temperature of 1100° C., repeat the steps in step 2), and...

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Abstract

The invention discloses a method for preparing a high-quality p-type cuprous oxide thin film. The steps are as follows: clean the copper sheet and dry it with nitrogen gas; Raise the temperature to 1050-1100°C at a rate of 15°C / min, and keep it warm for one hour; at 1050-1100°C, pass air into it to oxidize the copper sheet, and keep it warm for one hour; then at 1050-1100°C, use argon again to Drive out and keep warm for two hours in an argon atmosphere; finally, under the protection of argon, cool down to 500°C at a rate of 10°C / min, and then naturally cool to room temperature to obtain a high-quality p-type cuprous oxide film. The cuprous oxide obtained by the present invention has a large grain size and a carrier mobility of 60 cm 2 / V·s or more. The invention has the advantages of simple operation, stable result and high-quality cuprous oxide thin film.

Description

technical field [0001] The invention relates to a preparation method of a p-type cuprous oxide thin film, in particular to a preparation method of a high-quality p-type cuprous oxide thin film, and belongs to the technical field of material preparation. Background technique [0002] A recent research report lists nine inorganic semiconductor materials that are considered to have both the advantage of lower material extraction costs than crystalline silicon and excellent potential for power generation. Among them, the application potential of cuprous oxide as the light-absorbing layer of solar cells has received great attention. Cuprous oxide is an intrinsic p-type semiconductor material with a forbidden band width of 2.1eV, and its intrinsic p-type conduction is caused by acceptor energy levels formed by copper vacancies inside the crystal. Cuprous oxide has a high absorption coefficient and photoelectric conversion efficiency in the visible light region. According to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/02
CPCC01G3/02C01P2002/72C01P2006/40
Inventor 朱丽萍牛文哲王怡尘
Owner ZHEJIANG UNIV
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