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Manufacturing method for wafer-level uniaxial strain Ge on SiN buried insulating layer based on silicon nitride stress thin film and scale effect

A scale effect and uniaxial strain technology, applied in the field of microelectronics, can solve problems such as poor reliability, poor compatibility, and small strain, and achieve the effects of low cost, avoiding disc fragmentation, and large strain

Active Publication Date: 2016-11-09
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, this method has the following disadvantages: 1) Poor compatibility with traditional integrated circuit technology: In order to obtain GeOI with different strains, this method needs to make additional bending tables with different curvature radii, and the manufactured bending tables need to be compatible with existing With annealing equipment
2) Poor reliability: This process requires the use of pressure rods to apply mechanical force to bend the GeOI wafer, which will introduce defects into the top layer of Ge; if the GeOI wafer bends too much, it will cause wafer fragmentation
3) Due to the fear of breaking the GeOI wafer, the bending degree of the mechanical bending cannot be too large, which limits the amount of strain introduced in the top layer Ge, and the amount of strain that can be achieved is small

Method used

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  • Manufacturing method for wafer-level uniaxial strain Ge on SiN buried insulating layer based on silicon nitride stress thin film and scale effect
  • Manufacturing method for wafer-level uniaxial strain Ge on SiN buried insulating layer based on silicon nitride stress thin film and scale effect
  • Manufacturing method for wafer-level uniaxial strain Ge on SiN buried insulating layer based on silicon nitride stress thin film and scale effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Example 1, preparing a 4-inch SiN buried insulating layer uniaxially strained GeOI wafer material.

[0039] Step 1: Clean the SiN buried insulating layer GeOI wafer to remove surface pollutants.

[0040] (1.1) Use acetone and isopropanol to alternately perform ultrasonic cleaning on the GeOI wafer to remove organic contamination on the substrate surface;

[0041] (1.2) Prepare a 1:1:3 mixed solution of ammonia, hydrogen peroxide, and deionized water, and heat it to 120°C. Place the GeOI wafer in the mixed solution for 12 minutes, take it out and rinse it with a large amount of deionized water. To remove inorganic pollutants on the surface of GeOI wafers;

[0042] (1.3) Soak the GeOI wafer in HF acid buffer for 2 minutes to remove the oxide layer on the surface.

[0043] Step 2: Ion implantation.

[0044] Ion implantation is carried out to the cleaned GeOI wafer, so that the interface 4 of the Si substrate 3 and the SiN buried insulating layer 2 is loose, such as fi...

Embodiment 2

[0057] Example 2, preparing an 8-inch SiN buried insulating layer uniaxially compressively strained GeOI wafer material.

[0058] Step 1: cleaning the SiN buried insulating layer GeOI wafer to remove surface pollutants.

[0059] The implementation of this step is the same as step 1 of Embodiment 1.

[0060] Step 2: Implant the cleaned GeOI wafer with a dose of 1.1E15cm -2 , He ions with an energy of 110Kev to loosen the interface 4 between the Si substrate 3 and the SiN buried insulating layer 2, such as figure 2 as shown in b.

[0061] Step 3: Using the PECVD plasma enhanced chemical vapor deposition process, deposit a tensile stress SiN thin film 5 with a thickness of 1.1 μm and a stress of 1.2 GPa on the surface of the top Ge layer 1 of the ion-implanted GeOI wafer, such as figure 2 as shown in c.

[0062] The deposition process conditions are: high-frequency HF power is 1.3KW, low-frequency LF power is 0.31KW, high-purity SiH 4 The flow rate is 0.31slm, high-purity ...

Embodiment 3

[0070] Example 3, preparing a 12-inch SiN buried insulating layer uniaxially strained GeOI wafer material.

[0071] Step A: cleaning the SiN buried insulating layer GeOI wafer to remove surface pollutants.

[0072] The implementation of this step is the same as step 1 of Embodiment 1.

[0073] Step B: Perform ion implantation on the cleaned GeOI wafer to loosen the interface 4 between the Si substrate 3 and the SiN buried insulating layer 2, such as figure 2 as shown in b.

[0074] The ion implantation process is: the implanted ions are He ions, and the implantation dose is 1.1E16cm -2 , inject energy 150Kev.

[0075] Step C: Depositing a SiN film under high pressure stress.

[0076] Using PECVD plasma enhanced chemical vapor deposition process, the high frequency HF power is 0.41KW, the low frequency LF power is 0.61KW, high purity SiH 4 The flow rate is 0.21slm, high-purity NH 3 The flow rate is 2.4slm, the flow rate of high-purity nitrogen gas is 2.6slm, the pressure...

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Abstract

The invention discloses a manufacturing method for a wafer-level uniaxial strain Ge on a SiN buried insulating layer based on a silicon nitride stress thin film and scale effect. The manufacturing method is implemented by the steps of cleaning a GeOI wafer, and performing He ion implantation; depositing a SiN thin film with the pressure stress of greater than minus 1.1GPa or an SiN thin film with the tensile stress of greater than 1.1GPa on the Ge layer on the top layer of the GeOI wafer after ion implantation, and etching the SiN thin film to form a strip-shaped array; performing annealing processing on the GeOI wafer with the SiN thin film array; and etching and removing the SiN thin film array from the surface of the GeOI wafer to obtain the wafer-level uniaxial strain GeOI material. According to the manufacturing method, due to the uniaxial stretching or uniaxial compression plastic deformation of the SiN buried insulating layer under the effect of the strip-shaped SiN thin film, strain is introduced to the Ge layer on the top layer, so that the wafer-level uniaxial strain Ge can be used for manufacturing the GeOI wafers required by the ultra-high-speed, low-power-consumption and radiation-resisting semiconductor devices and chips.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to the manufacturing technology of semiconductor substrate materials, specifically a method for manufacturing wafer-level uniaxially strained Ge materials on SiN buried insulating layers, which can be manufactured for ultra-high speed and low power consumption , GeOI wafers required for radiation-resistant, high-power integrated semiconductor devices and chips. Background technique [0002] It is well known in the industry that the mobility of electrons and holes of the semiconductor Ge is 2.8 times and 4.2 times that of Si, respectively, and its hole mobility is the highest among all semiconductors. The strained Ge technology that introduces strain technology into Ge devices and integrated circuits can significantly improve carrier mobility, for example, the hole mobility of strained Ge buried trenches can be increased by 6-8 times. Therefore, Ge and strained Ge will be th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/265H01L21/324
CPCH01L21/265H01L21/324H01L21/7624
Inventor 戴显英祁林林郝跃底琳佳苗东铭梁彬焦帅
Owner XIDIAN UNIV