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Perovskite solar cell based on silicon-based micro-nano structure and production method of perovskite solar cell

A micro-nano structure, solar cell technology, applied in the field of solar cells, can solve the problems that the perovskite light absorption layer cannot fully absorb incident light, affect the photo-generated current, and the loss of incident light, so as to promote separation and transport, increase optical Absorb and improve battery performance

Inactive Publication Date: 2016-11-23
SHAANXI COAL & CHEM TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In this structure, since the incident light passes through the TCO electrode and the TiO 2 Reflection loss occurs when the electron transport layer is used, causing the perovskite light-absorbing layer to not fully absorb all the incident light
In addition, since the reflectance of the incident light on the polished surface of single crystal silicon without light trapping treatment is as high as 30%, it also causes a large loss of incident light, which directly affects the size of the photogenerated current.

Method used

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  • Perovskite solar cell based on silicon-based micro-nano structure and production method of perovskite solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Step 1: Prepare the crystal cone structure by irradiating the surface of p-type single crystal silicon with laser pulses, the pulse width is 100-100ps, the wavelength is 1064nm, the power is 5mW, the spot is 30μm, and the irradiation method is continuous marking line by line. The height of the crystal cone is 60 μm, and the width at half maximum is 10 μm.

[0046] Step 2: Using corrosion solution (HF: HNO 3 :H 2 O=2:2:3) Clean the single crystal silicon and the surface crystal cone structure, and the cleaning time is 180s.

[0047] Step 3: Prepare NiO on the surface of the cone by magnetron sputtering 2 The thin film acts as a hole transport layer with a thickness of 50 nm.

[0048] Step 4: Prepare the perovskite light absorbing layer by dual-source co-evaporation on the hole transport layer, and the evaporation source is PbI 2 with CH 3 NH 3 1, the dosage ratio is 1:3. The two react to form CH 3 NH 3 PB 3 The film thickness is 400 nm.

[0049] Step 5: Prepar...

Embodiment 2

[0053] Step 1: Prepare a porous structure on the surface of p-type single crystal silicon by metal-catalyzed chemical etching, the catalyst is 0.05mM HAuCl 4 solution, the corrosion solution is HF and H 2 o 2 deionized aqueous solution (HF: H 2 o 2 :H 2 O=1:5:2), the etching was carried out in an ultrasonic water bath, the etching time was 180s, and the prepared porous silicon had a depth of 20nm and a pore diameter of 50nm.

[0054] Step 2: Using corrosion solution (HF: HNO 3 :H 2 O=2:2:3) Clean the single crystal silicon and the surface crystal cone structure, and the cleaning time is 150s.

[0055] Step 3: Prepare NiO on the surface of the cone by magnetron sputtering 2 The thin film acts as a hole transport layer with a thickness of 50 nm.

[0056] Step 4: Prepare the perovskite light absorbing layer by dual-source co-evaporation on the hole transport layer, and the evaporation source is PbI 2 with CH 3 NH 3 1, the dosage ratio is 1:3. The two react to form CH ...

Embodiment 3

[0061] Step 1: Use laser pulses to irradiate the surface of p-type single crystal silicon to prepare crystal cone structures. The pulse width is 1-100ns, the wavelength is 870nm, the power is 30mW, and the irradiation method is continuous marking line by line. The height of the prepared crystal cones is 0.05μm, the full width at half maximum is 0.05μm.

[0062] Step 2: Using corrosion solution (HF: HNO 3 :H 2 O=3:2:3) Clean the single crystal silicon and the surface crystal cone structure, and the cleaning time is 120s.

[0063] Step 3: Prepare NiO on the surface of the cone by magnetron sputtering 2 The thin film acts as a hole transport layer with a thickness of 100 nm.

[0064] Step 4: Prepare the perovskite light absorbing layer by dual-source co-evaporation on the hole transport layer, and the evaporation source is PbI 2 with CH 3 NH 3 1, the dosage ratio is 1:1. The two react to form CH 3 NH 3 PB 3 The film thickness is 300 nm.

[0065] Step 5: On the perovski...

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Abstract

The invention provides a perovskite solar cell based on silicon-based micro-nano structure and a production method of the perovskite solar cell. The perovskite solar cell has the advantages that a light trapping structure is formed on the surface of monocrystalline silicon, so that the optical loss of a hetero-junction interface formed by perovskite and the monocrystalline silicon can be lowered; the light trapping structure can also effectively increase the area of a hetero-junction so as to form more carrier transmission channels, the photon absorption of the perovskite is promoted to allowing generated excitons (electron hole pairs) to be effectively separated and transported on the hetero-junction interface, and the performance of the solar cell is further increased; to be specific, the design of light trapping structure can allow incident light to be reflected and absorbed on the multiple interfaces of the perovskite / micro-nano structure, and the optical absorption of the perovskite layer is increased.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a perovskite solar cell based on a silicon-based micro-nano structure and a preparation method thereof. Background technique [0002] Perovskite cells are currently one of the most rapidly developing new solar cells. At the end of 2013, the journal Science listed an all-solid-state perovskite solar cell using an organometallic halide perovskite structure as a light-absorbing material as one of the top ten scientific and technological advances in the world that year, and called it an important breakthrough in solar technology. Since then, perovskite solar cells have become a hot spot in the field of solar cell research at home and abroad, and the conversion efficiency has increased from 15.9% in 2013 to 20.2% in 2015, surpassing dye-sensitized, organic, quantum dot and other solar cells for many years in terms of efficiency. The research results have made the photovoltaic tec...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/231H10K30/10H10K30/87Y02E10/549
Inventor 朱小宁黄林泉常远程吴强田占元邓增社
Owner SHAANXI COAL & CHEM TECH INST