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A method for preparing aluminum nitride powder based on aluminum carbide and its products

A technology of aluminum nitride and aluminum carbide, applied in the field of preparation of inorganic non-metallic powders, can solve the problems of low output, high reaction temperature, uneven particle size distribution, etc., achieve uniform particle size distribution, reduce reaction temperature, shorten the The effect of the generation cycle

Active Publication Date: 2019-06-28
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a method for preparing aluminum nitride powder based on aluminum carbide and its products, wherein the specific steps of the preparation method and the components in the products are studied and analyzed Design, thereby solving technical problems such as high reaction temperature, low yield and uneven particle size distribution

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  • A method for preparing aluminum nitride powder based on aluminum carbide and its products
  • A method for preparing aluminum nitride powder based on aluminum carbide and its products
  • A method for preparing aluminum nitride powder based on aluminum carbide and its products

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Effect test

Embodiment 1

[0033] Mix 0.9g of micron aluminum powder and 0.3g of carbon powder evenly, the average particle size of the aluminum powder is 10 microns, the purity is 98.5%, the average particle size of the carbon powder is 20 microns, and the purity is 99.2%. In the box-type furnace, argon gas was introduced as a protective gas, and the flow rate of argon gas was 3L / h. The temperature of the box-type furnace was raised to 1000°C and kept for 3h. After the reaction is cooled to room temperature, evenly spread the generated aluminum carbide powder in the reaction vessel and place it in the tube furnace, feed ammonia gas, the flow rate of ammonia gas is 3L / h, raise the temperature of the tube furnace to 1200°C, and keep it warm for 6h. After the reaction is cooled to room temperature, a high-quality aluminum nitride powder product with high purity, fine particle size and low impurity oxygen content is produced.

Embodiment 2

[0035] Mix 0.9g of micron aluminum powder and 0.6g of carbon powder evenly. The average particle size of aluminum powder is 15 microns and the purity is 98%. The average particle size of carbon powder is 30 microns and the purity is 99%. In the box-type furnace, argon gas was introduced as a protective gas, and the flow rate of argon gas was 3L / h. The temperature of the box-type furnace was raised to 600°C and kept for 8h. After the reaction is cooled to room temperature, evenly spread the generated aluminum carbide powder in the reaction vessel and place it in the tube furnace, feed ammonia gas, the flow rate of ammonia gas is 3L / h, raise the temperature of the tube furnace to 1500°C, and keep it warm for 1h. After the reaction is cooled to room temperature, a high-quality aluminum nitride powder product with high purity, fine particle size and low impurity oxygen content is produced.

Embodiment 3

[0037] Mix 0.9g of micron aluminum powder and 0.4g of carbon powder evenly, the average particle size of aluminum powder is 12 microns, the purity is 98.4%, the average particle size of carbon powder is 25 microns, and the purity is 99.5%. In the box-type furnace, argon gas was introduced as a protective gas, and the flow rate of argon gas was 3L / h. The temperature of the box-type furnace was raised to 1300°C and kept for 1h. After the reaction is cooled to room temperature, evenly spread the generated aluminum carbide powder in a reaction vessel and place it in a tube furnace, and feed ammonia gas with a flow rate of 3L / h, raise the temperature of the tube furnace to 600°C, and keep it warm for 10 hours. After the reaction is cooled to room temperature, a high-quality aluminum nitride powder product with high purity, fine particle size and low impurity oxygen content is produced.

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Abstract

The invention belongs to the field of preparation methods for inorganic non-metal powder, and discloses a method for preparing aluminum nitride powder based on aluminum carbide and a product thereof. The method comprises the following steps: (a) uniformly mixing an appropriate amount of micrometer aluminum powder and micrometer carbon powder, placing the mixture in an inert atmosphere, heating the mixture to a predetermined temperature, and performing heat-preservation for a period of time, and enabling a reaction to generate aluminum carbide; and (b) heating aluminum carbide in flowing ammonia or nitrogen to the predetermined temperature and performing heat-preservation for a period of time, enabling aluminum carbide to react with ammonia or nitrogen in a high-temperature environment, and generating aluminum nitride. The method provided by the invention can prepare aluminum nitride powder at a relatively low temperature; the prepared power has high purity, small particle size, uniform particle size distribution, high thermal conductivity and excellent thermal and mechanical properties, and can be widely applied to the fields of substrate materials of integrated circuits and the like on a large scale.

Description

technical field [0001] The invention belongs to the field of preparation methods of inorganic non-metallic powders, and more specifically relates to a method for preparing aluminum nitride powders based on aluminum carbide and its products. Background technique [0002] At present, the substrate materials widely used in industry are mainly alumina ceramics, beryllium oxide ceramics and aluminum nitride ceramics. Alumina ceramics have low dielectric loss, high mechanical strength, and good chemical stability, but their highest thermal conductivity is only 30W / (m·K), which is far from meeting the development of the electronics industry. Although the theoretical thermal conductivity of beryllium oxide ceramic materials is as high as 350W / (m·K), it is expensive, complicated to prepare and highly toxic, and has been gradually discontinued. Aluminum nitride has high thermal conductivity, its theoretical thermal conductivity can be as high as 320W / (m K), and aluminum nitride has r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/581C04B35/626C04B35/65
CPCC04B35/581C04B35/626C04B35/65C04B2235/402C04B2235/422C04B2235/658C04B2235/96
Inventor 胡木林方智威谢长生李晨辉
Owner HUAZHONG UNIV OF SCI & TECH
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