Thin film transistor and preparation method thereof
A thin-film transistor and thin-film layer technology, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing the cost of thin-film transistors, achieve the effects of reducing technology costs, simplifying the preparation process, and broad application prospects
Active Publication Date: 2017-01-04
HENAN UNIVERSITY
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Abstract
The invention provides a thin film transistor which comprises a source electrode layer, a drain electrode layer, a conductive film layer, a metal-oxide semiconductor (MOS) film layer, and an insulated substrate layer, wherein the source electrode layer and the drain electrode layer respectively serve as a source electrode and a drain electrode; the conductive film layer serves as a grid electrode; the MOS film layer serves as an active layer; the insulated substrate layer is arranged between the conductive film layer and the MOS film layer, and simultaneously serves as an insulated layer and a substrate layer. In the structure of the thin film transistor, the insulated substrate layer simultaneously serves as a substrate and an insulated film, so that a preparation process of the thin film transistor is greatly simplified, and the preparation cost is lowered. The invention also provides a preparation method of the thin film transistor. The method is simple in process and low in cost, and has extensive application prospect in large-area electronic circuits.
Application Domain
TransistorSemiconductor/solid-state device manufacturing
Technology Topic
Oxide semiconductorElectronic circuit +6
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- Experimental program(3)
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PUM
Property | Measurement | Unit |
Thickness | 10.0 ~ 1000.0 | µm |
Thickness | 30.0 ~ 50.0 | nm |
Thickness | 50.0 ~ 80.0 | nm |
Description & Claims & Application Information
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