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Thin film transistor and preparation method thereof

A thin-film transistor and thin-film layer technology, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing the cost of thin-film transistors, achieve the effects of reducing technology costs, simplifying the preparation process, and broad application prospects

Active Publication Date: 2017-01-04
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thickness of these insulating films ranges from tens of nanometers to hundreds of nanometers, and is usually completed by film preparation technologies such as chemical vapor deposition, radio frequency magnetron sputtering, atomic layer deposition or chemical solution. the cost of thin film transistors

Method used

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  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This embodiment provides a method for preparing a thin film transistor, using PET plastic with a thickness of 50 microns as the insulating substrate layer. The method specifically includes the following steps:

[0029] (1) Clean the PET insulating substrate layer and place it in the magnetron sputtering growth chamber. Under the condition of low-pressure high-purity argon gas with a gas pressure of 5 Pa, use radio frequency magnetron sputtering to deposit the PET insulating substrate layer An ITO conductive thin film layer with a thickness of 60 nm was prepared on the bottom side as the gate electrode, and the sputtering power was controlled at 100 W.

[0030] (2) In a low-pressure pure oxygen environment with a gas pressure of 10 Pa, a pulsed laser with a pulsed laser energy of 100 mJ and a pulsed laser frequency of 5 Hz is used to bombard the high-purity InGaZnO ceramic target, and the resulting plasma plume is deposited on the On the other side of the PET insulating ...

Embodiment 2

[0036] This embodiment provides a method for preparing a thin film transistor, using glass with a thickness of 50 microns as the insulating substrate layer, and the specific preparation steps are roughly the same as those in Embodiment 1, except that:

[0037] The step of preparing the metal oxide semiconductor thin film layer and the source-drain electrodes on the surface of the other side of the insulating substrate layer includes:

[0038] First, fix the metal mask with source and drain electrode patterns on the surface of the glass insulating substrate layer, and fix it in the thermal evaporation coating chamber, under a vacuum pressure of less than 1×10 -4 Under the condition of Pa, an aluminum film with a thickness of 35 nm was prepared on the surface of the other side of the glass insulating substrate layer by thermal evaporation coating method as the transistor source and drain electrode layer, wherein the evaporation current controlled by thermal evaporation coating t...

Embodiment 3

[0042] This embodiment provides a method for preparing a thin film transistor, using paper with a thickness of 75 microns as the insulating substrate. The specific preparation steps are roughly the same as those in Example 1, except that:

[0043] When preparing the metal oxide semiconductor thin film on the other side surface of the insulating substrate layer, in this embodiment, a ZnO thin film is used as the metal oxide semiconductor thin film layer.

[0044] The structure of a thin film transistor prepared by the above preparation method provided in this embodiment is the same as that in Embodiment 1.

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Abstract

The invention provides a thin film transistor which comprises a source electrode layer, a drain electrode layer, a conductive film layer, a metal-oxide semiconductor (MOS) film layer, and an insulated substrate layer, wherein the source electrode layer and the drain electrode layer respectively serve as a source electrode and a drain electrode; the conductive film layer serves as a grid electrode; the MOS film layer serves as an active layer; the insulated substrate layer is arranged between the conductive film layer and the MOS film layer, and simultaneously serves as an insulated layer and a substrate layer. In the structure of the thin film transistor, the insulated substrate layer simultaneously serves as a substrate and an insulated film, so that a preparation process of the thin film transistor is greatly simplified, and the preparation cost is lowered. The invention also provides a preparation method of the thin film transistor. The method is simple in process and low in cost, and has extensive application prospect in large-area electronic circuits.

Description

technical field [0001] The invention relates to the field of electronic materials and components, in particular to a thin film transistor and a preparation method thereof. Background technique [0002] Thin-film transistors are composed of thin films such as conductive layers, active layers, and insulating layers deposited on the substrate. They were developed to meet the needs of full-film thin-film integrated circuits. They are widely used in flat-panel displays, thin-film integrated circuits, etc. , photoelectric image sensors, thin film memory and gas sensors and other fields. In the past ten years, thin film transistors with oxide as the active layer have high field-effect mobility, small sub-threshold swing, large switching ratio, good transparency, can be prepared at low temperature, and are compatible with Silicon-based technology is basically compatible and many other advantages have attracted much attention. [0003] At present, the insulating layer materials com...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336
Inventor 张新安蒋俊华敖天勇张朋林张伟风
Owner HENAN UNIVERSITY
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