Preparation method of copper zinc tin sulfur selenium nanocrystal

A technology of copper, zinc, tin, sulfur, selenium and nanocrystals, which is applied in the field of nanomaterials, can solve the problems of high price, easy pollution of the environment, and high energy consumption, and achieve the effects of low cost, simple preparation, and high purity

Inactive Publication Date: 2017-02-01
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The commonly used vacuum technology to prepare copper zinc tin sulfur selenium requires expensive equipment cost, large investment and high energy consumption
At present, the colloidal solution method is often used to prepare copper zinc tin sulfur selenium, but this method needs to use organic solvents, which is expensive, toxic or pungent, and easy to pollute the environment; moreover, it still needs higher heating conditions (≥200 ° C), can consumption is still large

Method used

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  • Preparation method of copper zinc tin sulfur selenium nanocrystal
  • Preparation method of copper zinc tin sulfur selenium nanocrystal
  • Preparation method of copper zinc tin sulfur selenium nanocrystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] This embodiment prepares Cu according to the following steps 2 ZnSn(S 1-x Se x ) 4 Nanocrystalline (x=0):

[0046] a, dissolving 10.0mmol S powder into 9.0mL mass concentration is 20.0% (NH 4 ) 2 In the S solution, magnetically stir for 1 hour to completely dissolve; then add 5.0 mmol of Sn powder and continue stirring for 0.5 hour to completely dissolve the Sn powder to obtain a clear yellow-green solution A;

[0047] b. Mix 5.0mmol Zn(NO 3 ) 2 ·6H 2 O was added to 6.0 mL of ammonia solution with a mass concentration of 25.0%, and ultrasonically treated for 3 minutes to obtain a colorless and transparent solution B;

[0048] c, respectively prepare 70mL 1.0M thiourea aqueous solution (colorless and clear) and 3mL 1.68M Cu(NO 3 ) 2 aqueous solution (dark blue), then Cu(NO 3 ) 2 The aqueous solution was added dropwise to the thiourea aqueous solution, and magnetically stirred for 20 minutes to obtain a colorless and clear solution C;

[0049] d. Pour solutio...

Embodiment 2

[0058] This embodiment prepares Cu according to the following steps 2 ZnSn(S 1-x Se x ) 4 Nanocrystalline (x=0.52):

[0059] a, 4mmol S powder and 6mmol Se powder are dissolved to 9.0mL mass concentration and are 20.0% (NH 4 ) 2 In the S solution, magnetically stir for 1 hour to completely dissolve; then add 5.0 mmol of Sn powder and continue stirring for 1 hour to completely dissolve the Sn powder to obtain black solution A;

[0060] b. Mix 5.0mmol Zn(NO 3 ) 2 ·6H 2 O was added to 6.0 mL of ammonia solution with a mass concentration of 25.0%, and ultrasonically treated for 3 minutes to obtain a colorless and transparent solution B;

[0061] c, respectively prepare 70mL 1.0M thiourea aqueous solution (colorless and clear) and 3mL 1.68M Cu(NO 3 ) 2 aqueous solution (dark blue), then Cu(NO 3 ) 2 The aqueous solution was added dropwise to the thiourea aqueous solution, and magnetically stirred for 20 minutes to obtain a colorless and clear solution C;

[0062] d. Pou...

Embodiment 3

[0069] This embodiment prepares Cu according to the following steps 2 ZnSn(S 1-x Se x ) 4 Nanocrystalline (x=0.65):

[0070] a, dissolving 10.0mmol Se powder into 9.0mL mass concentration is 20.0% (NH 4 ) 2 In the S solution, stir magnetically for 1 hour to completely dissolve; then add 5.0 mmol of Sn powder and continue stirring for 0.5 hour to completely dissolve the Sn powder to obtain black solution A;

[0071] b. Add 5.0mmol Zn(NO 3 ) 2 ·6H 2 O was added to 6.0 mL of ammonia solution with a mass concentration of 25.0%, and ultrasonically treated for 3 minutes to obtain a colorless and transparent solution B;

[0072] c, respectively prepare 70mL 1.0M thiourea aqueous solution (colorless and clear) and 3mL 1.68M Cu(NO 3 ) 2 aqueous solution (dark blue), then Cu(NO 3 ) 2 The aqueous solution was added dropwise to the thiourea aqueous solution, and magnetically stirred for 20 minutes to obtain a colorless and clear solution C;

[0073] d. Pour solution A and sol...

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Abstract

The invention discloses a preparation method of a copper zinc tin sulfur selenium nanocrystal. Novel complex ions are designed and reacted at room temperature to prepare the water-soluble Cu2ZnSn(S[1-x]Sex)4(CZTSSe) nanocrystal ink by one step, wherein the selenium content x is greater than or equal to 0 and less than or equal to 0.65. The preparation method is carried out at room temperature without heating, so the energy consumption is zero. The solvent is a water solution which is free of other organic solvents, so the method has the characteristics of environment friendliness, simple preparation process and low cost.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, in particular to a Cu 2 ZnSn(S 1-x Se x ) 4 Methods of preparing nanocrystals. Background technique [0002] Copper Zinc Tin Sulfur Selenium Cu 2 ZnSn(S 1-x Se x ) 4 (CZTSSe) is a p-type direct band gap semiconductor material with excellent electrical and optical properties, adjustable band gap, high light absorption coefficient, abundant reserves of constituent elements in the earth's crust, low price, and non-toxicity. It has broad application prospects in optoelectronic devices and is a research hotspot in the field of advanced materials and functional materials at home and abroad. [0003] The commonly used vacuum technology to prepare copper zinc tin sulfur selenium requires expensive equipment cost, large investment and high energy consumption. At present, the colloidal solution method is often used to prepare copper zinc tin sulfur selenium, but this method needs to use orga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00B82Y40/00
CPCC01B19/002C01P2002/72C01P2002/80C01P2002/82C01P2004/03C01P2004/04C01P2004/64C01P2006/80
Inventor 许俊胡正乔黄艳艳孙联领
Owner HEFEI UNIV OF TECH
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