Preparation method of polyimide film with low dielectric constant and low dielectric loss factor

A technology of polyimide film and low dielectric constant, which is applied in the field of preparation of polyimide film, can solve the problems of complex preparation process, expensive polyimide, and high cost, and achieve simple preparation process and excellent mechanical properties performance, low cost

Active Publication Date: 2017-02-01
NINGBO JINSHAN NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is known that polyimide film has high dielectric constant and high dissipation factor, and it still has disadvantages and limitations as a high-frequency material.
At present, reducing the dielectric constant of PI materials mainly focuses on the following aspects: (1) Using fluorine-containing dianhydride and diamine monomers, but due to the complicated preparation process and high cost of fluorine-containing monomers, the prepared polyimide Amines are expensive; (2) Remove additives by heating or solvent extraction to obtain polyimide with a porous structure, and introduce voids into polyimide, such as using melamine as a pore-forming agent in patent CN201410481836.8, CN200610053038.0 The prepared honeycomb polyimide film, CN201410454474

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The preparation method of a polyimide film with low dielectric constant and low dielectric dissipation factor provided in this embodiment, the specific steps are as follows:

[0020] (1) Put 4,4-diaminodiphenyl ether (1 mol, 200.2 g) into the reactor and dissolve it with dimethylacetamide, then add pyromellitic dianhydride (PMDA, 0.8 mol , 174.5 g) and 3,3',4,4'-benzophenonetetra-acid dianhydride (BTDA, 0.2 mol, 64.4 g) into the reactor, stirred, and prepared into the required polyamic acid solution;

[0021] (2) Mix nano-sized polytetrafluoroethylene (PTFE) (50.0 g), nano-sized aluminum oxide powder (30.0 g), and nano-sized silicon dioxide powder (20.0 g) evenly, and then add into dimethylacetyl, fully stirred, and prepared into a slurry;

[0022] (3) Add the prepared slurry into the reaction kettle of the polyamic acid solution prepared above, then add a solvent to adjust and control the viscosity of the final reaction product, and then defoam and cast to form a film...

Embodiment 2

[0025] The preparation method of a polyimide film with low dielectric constant and low dielectric dissipation factor provided by this embodiment is roughly the same as that of Embodiment 1, except that the proportions of the three additives used are different. Vinyl fluoride (PTFE) 60.0 g, nano-sized aluminum oxide powder 20.0 g, nano-sized silicon dioxide powder 20.0 g.

[0026] The dielectric constant of the polyimide film with low dielectric constant and low dielectric loss factor obtained in this embodiment is 2.4, and the dielectric loss factor is 0.002.

Embodiment 3

[0028] The preparation method of a polyimide film with low dielectric constant and low dielectric dissipation factor provided by this embodiment is roughly the same as that of Embodiment 1, except that the proportions of the three additives used are different. Vinyl fluoride (PTFE) 50.0 g, nano-sized aluminum oxide powder 30.0 g, nano-sized silicon dioxide powder 20.0 g.

[0029] The dielectric constant of the polyimide film with low dielectric constant and low dielectric loss factor obtained in this embodiment is 2.6, and the dielectric loss factor is 0.003.

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Abstract

The invention discloses a preparation method of a polyimide film with a low dielectric constant and a low dielectric loss factor. Dianhydride and diamine are adopted for preparing a polyamide acid solution, and the polyamide acid solution and additives such as nanometer fluorine-containing macromolecule powder, nanometer aluminum oxide powder and nanometer silicon dioxide powder are prepared into the polyimide film. The preparation method is characterized in that the additives account for 10-50% of the weight of polyamide acid. The obtained polyimide film with the low dielectric constant and the lower dielectric loss factor can achieve the effects that the dielectric constant is smaller than or equal to 2.6, the dielectric loss factor is smaller than or equal to 0.003 on the basis of keeping good mechanical properties, the technology is simple, and raw materials are easy to purchase and low in price.

Description

technical field [0001] The invention relates to a preparation method of polyimide film, in particular to a preparation method of polyimide film with low dielectric constant and low dielectric loss factor. Background technique [0002] With the development of technology and product demand, the size of printed circuit boards tends to be light, thin, short, and small. In response to the high frequency of wireless networks and communication products, high-frequency substrates with fast transmission rates have gradually become the focus of development. As a material used in high-frequency communication substrates, it is the basic requirement to be able to transmit data quickly, and data loss or interference cannot be caused during the transmission process. It is known that the delay caused by the transmission of electronic signals between metal wires is the main reason for the speed limitation of semiconductor devices. In order to reduce the time delay of signal transmission, ma...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L79/08C08L27/18C08K3/22C08K3/36C08G73/10
CPCC08G73/1071C08J5/18C08J2379/08C08J2427/18C08K2201/011C08L79/08C08L27/18C08K2003/2227C08K3/36
Inventor 岑建军
Owner NINGBO JINSHAN NEW MATERIAL
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