Method for preparing copper tungstate photo-anode film

A copper tungstate and photoanode technology, which is applied in photovoltaic power generation, photosensitive equipment, electrolytic capacitors, etc., can solve the problem of low conversion efficiency from solar energy to hydrogen energy, and achieve the effect of performance improvement

Active Publication Date: 2017-02-08
NANJING UNIV
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  • Abstract
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Problems solved by technology

[0003] Copper tungstate can absorb visible light near 550nm, and its theoretical solar-to-hydrogen energy conversion efficiency can reach 10%, but the actual solar-to-hydrogen energy conversion efficiency is very low

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  • Method for preparing copper tungstate photo-anode film
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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the embodiments and accompanying drawings.

[0020] The preparation method of copper tungstate photoanode comprises the steps:

[0021] (1) at first prepare the organic solution that contains copper, tin element, be that copper nitrate trihydrate is dissolved in ethylene glycol methyl ether respectively, and concentration is 0.05mol / L; Dihydrate tin protochloride is dissolved in ethylene glycol methyl ether, concentration 0.05mol / L;

[0022] (2) Get (5-X) ml and the copper and tin solution configured in the step (1) of X ml respectively, mix to uniform, wherein when X=0.15, the tin-doped copper tungstate photoanode has the best performance;

[0023] (3) Add an equimolar amount of ammonium metatungstate, then add 0.1-0.7ml of concentrated nitric acid and 10-100mg of ammonium nitrate, stir the solution until it becomes clear, and obtain the precursor solution. The volume of concentrated nitric acid...

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Abstract

The invention relates to a method for preparing a copper tungstate photo-anode film. The method comprises the steps of (1) preparing organic solutions containing copper and tin, wherein the solutions are ethylene glycol monomethyl ether with the dissolution of copper nitrate trihydrate and the concentration of 0.04-0.08mol/L and ethylene glycol monomethyl ether with the dissolution of stannous chloride dihydrate and the concentration of 0.04-0.08mol/L, (2) mixing (5-x) ml copper solution and X ml tin solution prepared in the step (1) to be uniform, (3) adding ammonium metatungstate with an equimolar amount, adding 0.1-0.7ml concentrated nitric acid and 10 to 100mg ammonium nitrate, stirring the solution to be clear to obtain a precursor solution, (4) using a pipettor to take a certain amount of precursor solution prepared in the step (3), dripping the solution on a fluorine doped tin oxide conductive substrate to be heated for 20 min on a heating plate of 70 DEG C, and removing an organic solvent, and (5) burning the fluorine doped tin oxide conductive substrate covered by a film of precursor in a muffle furnace with the temperature of 550+/-50 DEG C, and taking the substrate out to be naturally cooled to a room temperature to obtain a corresponding tin doped copper tungstate film.

Description

technical field [0001] The invention relates to a method for preparing a copper tungstate film and using tin element doping to increase carrier concentration. Background technique [0002] With the increasing demand for energy consumption in modern society, the shortcomings of traditional fossil energy are also increasingly magnified, and the environmental pollution problems caused by its limited total amount and use process need to be solved urgently. Finding alternatives to traditional fossil energy has long been considered by many The country is on the agenda. Using photoelectrochemical cells to directly convert highly dispersed, volatile, and difficult to store and transport solar energy into high energy density and stable clean hydrogen energy is expected to solve the current energy problem. However, the conversion efficiency of current photoelectrochemical cell water splitting systems is limited by the low photocurrent density and high turn-on potential of photoanode ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042
CPCH01G9/2045Y02E10/542
Inventor 李朝升钱勤枫黄辉庭邹志刚
Owner NANJING UNIV
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