Chemical method for semiconductor film materials of ternary wide bandgap compound of synthesis of copper-zinc iodide

A thin film material and chemical method technology, applied in the field of material chemistry, can solve the problems of large environmental impact, high reaction temperature, complicated operation, etc., and achieve the effects of simple reaction device, simple operation and controllable reaction process.
CN106449367AActive Publication Date: 2017-02-22XUCHANG UNIV
2 Cites 11 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
XUCHANG UNIV
Publication Date
2017-02-22

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention belongs to chemical technical field, in particular to a chemical method for semiconductor film materials of ternary wide bandgap compound of synthesis of copper-zinc iodide. The method is that putting the copper-zinc alloy film into iodine vapor with a temperature of 45 DEG C to 80 DEG C for co-oxidation reaction of the copper-zinc alloy. The reaction time takes 3 to 8 hours. After reacting for certain time, Cu2ZnI4 films can be produced in situ on the surface of substrate, and that is the semiconductor film materials of the synthesis of the copper-zinc iodide. The preparation method does not require organic solvents to participate in the reaction or reaction medium. The crystal is crystallized well. The product can be used directly without complicated processing. The method has the advantages of simple operation, rapid reaction, better environmental protection, low energy consumption, low cost and good reproducibility. In addition, a film can be directly formed on the substrate surface in the method. The material is more beneficial for the application in photoelectric conversion devices.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] Technical field:

[0002] The invention belongs to the technical field of material chemistry, in particular to a chemical method for synthesizing a copper-zinc iodide ternary wide-bandgap compound semiconductor thin film material.

[0003] Background technique:

[0004] Wide-bandgap semiconductors are generally semiconductor materials with a bandgap greater than 2.0 eV at room temperature, so they can transmit most of the sunlight and are widely used in the neighborhood of optoelectronic devices. In recent years, new solar cells with low-cost and high-efficiency lead halide perovskite materials as light absorbing layers have developed rapidly, and their photoelectric conversion efficiency has exceeded 20%, which is expected to be applied in solar energy utilization. But lead halide-based perovskite solar cell devices need to use expensive wide-bandgap organic compounds (Sprio-MEOTAD, P3HT, etc.) as hole transport layer materials. The price of these organic compounds is a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More