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Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material

A thermally conductive composite material and carbon nanotube technology, which is applied in the field of preparation of carbon nanotube/silicon carbide thermally conductive composite materials, can solve the problem that the interface between carbon nanotubes and silicon carbide substrates has weak bonding ability, reduces the thermal conductivity of composite materials, and affects composite materials. Mechanical properties and other issues, to achieve the effects of good antioxidant properties, good mechanical properties, and simple methods

Active Publication Date: 2017-04-19
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bonding ability of carbon nanotubes and silicon carbide matrix interface is weak
Interfacial defects seriously affect the mechanical properties of composites
In addition, the interface between carbon nanotubes and silicon carbide matrix is ​​prone to gaps, which hinder the propagation of phonons and greatly reduce the thermal conductivity of composite materials.

Method used

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  • Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material
  • Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material
  • Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material

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Experimental program
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Effect test

Embodiment 1

[0031] Place silicon carbide particles in a tube furnace; feed argon with a flow rate of 300 sccm and hydrogen with a flow rate of 30 sccm; heat up to 750°C; feed a mixed solution of carbon source and catalyst, wherein the carbon source is a mixed solution of ethanol and xylene , ethanol:xylene volume ratio=1:1, catalyst is ferrocene, is dissolved in the mixed solution of carbon source, and its concentration is 0.02g / ml, and injection speed is 15ml / h, and growth time is 10min; close H 2 Take out the silicon carbide with carbon nanotubes after cooling down; under the state of vacuum of 0.1MPa, immerse the polycarbosilane (PCS) solution of 0.3g / ml and the silicon carbide of growth carbon nanotubes for 20min; Form a block; pre-press the obtained silicon carbide block at a pressure of 35MPa and 180°C, then place the obtained green body in a mold, and place them together in a vacuum hot-pressing furnace for high-temperature hot-pressing, hot-pressing temperature At 1350°C, the hot...

Embodiment 2

[0033] Place silicon carbide particles in a tube furnace; feed argon with a flow rate of 350 sccm and hydrogen gas with a flow rate of 40 sccm; heat up to 800°C; feed a mixed solution of carbon source and catalyst, wherein the carbon source is a mixed solution of ethanol and xylene , ethanol:xylene volume ratio is=1:1, catalyst is ferrocene, is dissolved in the mixed solution of carbon source, and its concentration is 0.02g / ml, and injection speed is 18ml / h, and growth time is 30min; close H 2 Take out the silicon carbide with carbon nanotubes after cooling down; Under the state of vacuum degree of 0.1MPa, immerse the polycarbosilane (PCS) solution of 0.35g / ml and the silicon carbide of growth carbon nanotubes for 30min; Form a block; pre-press the obtained silicon carbide block at a pressure of 35MPa and 180°C, then place the obtained green body in a mold, and place them together in a vacuum hot-pressing furnace for high-temperature hot-pressing, hot-pressing temperature At ...

Embodiment 3

[0035] Put silicon carbide particles in a tube furnace; feed argon gas with a flow rate of 400 sccm and hydrogen gas with a flow rate of 40 sccm; heat up to 800°C; feed a mixed solution of carbon source and catalyst, wherein the carbon source is a mixed solution of ethanol and xylene , ethanol:xylene volume ratio is=1:1, catalyst is ferrocene, is dissolved in the mixed solution of carbon source, and its concentration is 0.025g / ml, and injection speed is 18ml / h, and growth time is 30min; close H 2Take out the silicon carbide with carbon nanotubes after cooling down; Under the state of vacuum of 0.1MPa, the polycarbosilane (PCS) solution of 0.4g / ml and the silicon carbide of growth carbon nanotubes are impregnated for 40min; Form a block; pre-press the obtained silicon carbide block at a pressure of 40 MPa and 180°C, then place the obtained green body in a mold, and place them together in a vacuum hot-pressing furnace for high-temperature hot-pressing, hot-pressing temperature ...

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Abstract

The invention relates to a preparation method for a silicon carbide / carbon nano-tube heat-conducting composite material. The preparation method comprises the following steps: placing silicon carbide particles in a tubular furnace; charging argon and hydrogen; heating to 750-850 DEG C; charging a mixed solution of a carbon source and a catalyst, and growing carbon nano-tubes on the silicon carbide; impregnating a polycarbosilane solution and the silicon carbide growing the carbon nano-tubes in a state that a vacuum degree is less than or equal to 0.1MPa; drying to form blocks; and carrying out pre-pressing and hot-pressing forming on the obtained blocks to obtain the silicon carbide / carbon nano-tube heat-conducting composite material. The bending strength of the composite material can achieve more than 125MPa, and the compressive strength thereof can achieve more than 500MPa via a test. The composite material is high in oxidation resistance, and tolerant to high-temperature ablation at 800-1200 DEG C for a long time in air. The thermal conductivity of the composite material can achieve more than 30W / (m.K).

Description

technical field [0001] The invention relates to a preparation method of a carbon nanotube / silicon carbide heat-conducting composite material. Background technique [0002] With the rapid development of science and technology, efficient heat conduction and heat dissipation has become a key issue in the field of thermal management and has attracted widespread attention. With the rapid development of microelectronics integration technology and assembly technology, the volume of logic circuits and electronic components is getting smaller and smaller, and the sharp increase in operating frequency will cause a sudden increase in the heat generated by the system. If there is no sufficient thermal management guarantee, it will easily lead to Related components are prematurely aged or damaged. The surface temperature of microelectronic chips must be maintained at a relatively low temperature (such as silicon devices <100°C) to ensure their high-performance operation. Many electro...

Claims

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Application Information

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IPC IPC(8): C04B35/80C04B35/565C04B35/645
CPCC04B35/565C04B35/645C04B35/806C04B2235/6022C04B2235/6567C04B2235/6581C04B2235/96C04B2235/9607C04B2235/9684
Inventor 封伟尹晓东陈松超冯奕钰秦盟盟
Owner TIANJIN UNIV
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