Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material

A thermally conductive composite material and carbon nanotube technology, which is applied in the field of preparation of carbon nanotube/silicon carbide thermally conductive composite materials, can solve the problem that the interface between carbon nanotubes and silicon carbide substrates has weak bonding ability, reduces the thermal conductivity of composite materials, and affects composite materials. Mechanical properties and other issues, to achieve the effects of good antioxidant properties, good mechanical properties, and simple methods

Active Publication Date: 2017-04-19
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bonding ability of carbon nanotubes and silicon carbide matrix interface is weak
Interfacial defects seriously affect the mechanical properties of composites
In addition, the i

Method used

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  • Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material
  • Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material
  • Preparation method for carbon nano-tube/silicon carbide heat-conducting composite material

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0030] Example 1

[0031] Place silicon carbide particles in a tube furnace; pass in argon with a flow of 300sccm and hydrogen with a flow of 30sccm; heat up to 750°C; pass in a mixed solution of carbon source and catalyst, where the carbon source is a mixed solution of ethanol and xylene , Ethanol: xylene volume ratio = 1:1, catalyst is ferrocene, dissolved in carbon source mixed solution, its concentration is 0.02g / ml, injection speed is 15ml / h, growth time is 10min; after the growth is over Close H 2 ; After cooling down, take out the silicon carbide with carbon nanotubes; under a vacuum of 0.1MPa, immerse 0.3g / ml polycarbosilane (PCS) solution and silicon carbide for growing carbon nanotubes for 20 minutes; after drying A block is formed; the obtained silicon carbide block is pre-pressed and molded at a pressure of 35MPa and 180°C, and then the obtained blank is placed in a mold, and placed in a vacuum hot pressing furnace for high-temperature hot pressing. At 1350℃, the hot...

Example Embodiment

[0032] Example 2

[0033] Place silicon carbide particles in a tube furnace; pass in argon with a flow of 350sccm and hydrogen with a flow of 40sccm; increase the temperature to 800°C; pass in a mixed solution of carbon source and catalyst, where the carbon source is a mixed solution of ethanol and xylene , Ethanol: xylene volume ratio = 1:1, catalyst is ferrocene, dissolved in carbon source mixed solution, its concentration is 0.02g / ml, injection speed is 18ml / h, growth time is 30min; after the growth is over Close H 2 ; After cooling down, take out the silicon carbide with carbon nanotubes; under a vacuum of 0.1MPa, immerse the 0.35g / ml polycarbosilane (PCS) solution and the silicon carbide for growing carbon nanotubes for 30 minutes; after drying A block is formed; the obtained silicon carbide block is pre-pressed and molded at a pressure of 35MPa and 180°C, and then the obtained blank is placed in a mold, and placed in a vacuum hot pressing furnace for high-temperature hot pr...

Example Embodiment

[0034] Example 3

[0035] Place silicon carbide particles in a tube furnace; pass in argon with a flow of 400sccm and hydrogen with a flow of 40sccm; increase the temperature to 800℃; pass in a mixed solution of carbon source and catalyst, where the carbon source is a mixed solution of ethanol and xylene , Ethanol: Xylene volume ratio = 1:1, catalyst is ferrocene, dissolved in carbon source mixed solution, its concentration is 0.025g / ml, injection speed is 18ml / h, growth time is 30min; after the end of growth Close H 2 ; After cooling down, take out the silicon carbide with carbon nanotubes; under a vacuum of 0.1MPa, immerse 0.4g / ml of polycarbosilane (PCS) solution and silicon carbide for growing carbon nanotubes for 40 minutes; after drying A block is formed; the obtained silicon carbide block is pre-pressed and molded at a pressure of 40MPa and 180°C, and then the obtained blank is placed in a mold, and placed in a vacuum hot pressing furnace for high temperature hot pressing....

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Abstract

The invention relates to a preparation method for a silicon carbide/carbon nano-tube heat-conducting composite material. The preparation method comprises the following steps: placing silicon carbide particles in a tubular furnace; charging argon and hydrogen; heating to 750-850 DEG C; charging a mixed solution of a carbon source and a catalyst, and growing carbon nano-tubes on the silicon carbide; impregnating a polycarbosilane solution and the silicon carbide growing the carbon nano-tubes in a state that a vacuum degree is less than or equal to 0.1MPa; drying to form blocks; and carrying out pre-pressing and hot-pressing forming on the obtained blocks to obtain the silicon carbide/carbon nano-tube heat-conducting composite material. The bending strength of the composite material can achieve more than 125MPa, and the compressive strength thereof can achieve more than 500MPa via a test. The composite material is high in oxidation resistance, and tolerant to high-temperature ablation at 800-1200 DEG C for a long time in air. The thermal conductivity of the composite material can achieve more than 30W/(m.K).

Description

technical field [0001] The invention relates to a preparation method of a carbon nanotube / silicon carbide heat-conducting composite material. Background technique [0002] With the rapid development of science and technology, efficient heat conduction and heat dissipation has become a key issue in the field of thermal management and has attracted widespread attention. With the rapid development of microelectronics integration technology and assembly technology, the volume of logic circuits and electronic components is getting smaller and smaller, and the sharp increase in operating frequency will cause a sudden increase in the heat generated by the system. If there is no sufficient thermal management guarantee, it will easily lead to Related components are prematurely aged or damaged. The surface temperature of microelectronic chips must be maintained at a relatively low temperature (such as silicon devices <100°C) to ensure their high-performance operation. Many electro...

Claims

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Application Information

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IPC IPC(8): C04B35/80C04B35/565C04B35/645
CPCC04B35/565C04B35/645C04B35/806C04B2235/6022C04B2235/6567C04B2235/6581C04B2235/96C04B2235/9607C04B2235/9684
Inventor 封伟尹晓东陈松超冯奕钰秦盟盟
Owner TIANJIN UNIV
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