A method for generating mid-infrared supercontinuum in communication band based on silicon nitride waveguide
A production method and technology of silicon nitride, applied in instruments, nonlinear optics, optics, etc., can solve the problems of inconvenient on-chip photon integration, limit the efficiency of nonlinear effects, unstable performance of sulfide waveguides, etc., to overcome nonlinear optical The effect of power consumption
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Embodiment 1
[0034] This embodiment provides a supercontinuum generation method capable of realizing near-infrared to mid-infrared bands.
[0035] Such as figure 1 As shown, the silicon nitride waveguide structure in this embodiment includes a silicon dioxide oxide layer 102 disposed on a silicon wafer 101, and the silicon dioxide oxide layer 102 is etched on the surface to form a groove 103 containing a single silicon dioxide ridge, And fill the grooves 103 on both sides of the ridge-shaped silicon dioxide with silicon nitride, and finally cover the entire structure surface with a layer of silicon nitride reverse structure 104, its dispersion characteristics and mode field distribution are as follows: figure 2 shown.
[0036] refer to image 3 , during specific implementation, the femtosecond laser 301 emits an ultrashort optical pulse with a center wavelength of 1.804 microns, a full width at half maximum and a peak power of 50 femtoseconds and 10 kilowatts respectively, passing throu...
Embodiment 2
[0040] Such as Figure 5 As shown, the supercontinuum is realized based on the nonlinear effect in the flat and highly nonlinear inverted silicon nitride waveguide with dispersion, and the example of the influence of input optical power changes on the performance of the supercontinuum. The femtosecond laser 301 emits a central wavelength of 1.804 microns, half value Ultrashort optical pulses with full width and peak power of 50 femtoseconds and 10 kilowatts respectively, after passing through the polarization control system composed of half-wave plate 302 and polarizing beam splitter 303, are further coupled and injected into the ridge / groove with flat dispersion by lens 304 Slot-mixed inverted silicon nitride waveguide 305, due to the high peak power of the femtosecond pulse, combined with the large nonlinear coefficient of the silicon nitride waveguide 305, self-phase modulation, cross-phase modulation, and four-wave mixing occur inside it , soliton frequency shift, dispersi...
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