Semiconductor-laser narrow pulse driving circuit and working method thereof

A drive circuit and narrow pulse technology, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problem of inability to achieve sub-nanosecond pulse width optical pulse signal output, increase signal rise and fall time, and increase system complexity problems such as high degree of accuracy, and achieve the effect of adjustable pulse width and repetition frequency, large driving current, and simple structure

Inactive Publication Date: 2017-05-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both of the above two patents directly drive the gate of the FET with a narrow pulse signal, but due to the parasitic parameters of the MOSFET, this will increase the rise and fall time of the signal and widen the pulse width of the signal, and by charging the capacitor The way of discharging to obtain high-peak narrow pulse signal needs to provide a very high voltage, which requires adding a pulse shaping

Method used

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  • Semiconductor-laser narrow pulse driving circuit and working method thereof
  • Semiconductor-laser narrow pulse driving circuit and working method thereof
  • Semiconductor-laser narrow pulse driving circuit and working method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0041] Example 1

[0042] Such as figure 1 Shown.

[0043] A semiconductor laser narrow pulse drive circuit includes an external power supply interface circuit, a narrow pulse generation circuit and a MOSFET pulse drive circuit; the external power supply interface circuit supplies power for the narrow pulse generation circuit and the MOSFET pulse drive circuit respectively.

[0044] External power supply interface circuit, used to connect with the external power input terminal to introduce external power; narrow pulse generation circuit, used to generate the required narrow pulse signal, control the MOSFET switch in the MOSFET drive circuit; MOSFET pulse drive circuit, used to drive the laser , Provide the working voltage and working current of the semiconductor laser, and drive the laser to generate the required optical pulse signal.

Example Embodiment

[0045] Example 2

[0046] As the semiconductor laser narrow pulse driving circuit described in embodiment 1, the difference is that the narrow pulse generating circuit includes a CPLD control chip U6, an AND chip U7, a crystal oscillator clock U8, a delay chip U9, a delay chip U10 and Level conversion chip U11; the MOSFET pulse drive circuit includes a MOSFET drive chip U4;

Example Embodiment

[0047] Example 3

[0048] Such as Figure 6-11 Shown.

[0049] As in the semiconductor laser narrow pulse driving circuit described in Embodiment 2, the difference is that the second pin of the crystal oscillator clock U8 is connected to the CPLD control chip U6 pin 12, and the crystal oscillator clock U8’s pin 1 is connected to +3.3V Power supply, the 1st pin of the crystal clock U8 is also grounded through the capacitor C13, and the 4th pin of the crystal clock U8 is grounded;

[0050] The 1st and 3rd pins of the level shifting chip U11 are grounded, the 2nd pin of the level shifting chip U11 is connected to +3.3V power supply, and the 4th pin of the level shifting chip U11 is connected to the 26th pin of the CPLD control chip U6 ; Pins 10, 13, and 18 of the level conversion chip U11 are connected in parallel and then connected to +3.3V power; the pins 10, 13, and 18 of the level conversion chip U11 are connected in parallel and grounded through capacitors C14, C15, C16, and C17 r...

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Abstract

The invention relates to a semiconductor-laser narrow pulse driving circuit and a working method thereof. The semiconductor-laser narrow pulse driving circuit comprises an external power supply interface circuit, a narrow pulse generating circuit and a MOSFET pulse driving circuit. The external power supply interface circuit provides power for the narrow pulse generating circuit and the MOSFET pulse driving circuit respectively. Through controlling a pulse width and a repetition frequency of a narrow pulse generating circuit trigger signal, a semiconductor laser can acquire a light pulse signal with the continuous adjustable pulse width and the repetition frequency. The trigger signal generated by the narrow pulse generating circuit directly drives a drain electrode switch of a MOSFET driving chip field effect transistor and a grid electrode of the field effect transistor is connected to a stable voltage so that a problem that signal rise time and fall time are too long when a pulse signal is directly used to drive the grid electrode of the field effect transistor can be avoided.

Description

technical field [0001] The invention relates to a semiconductor laser narrow pulse driving circuit and a working method thereof, belonging to the technical field of semiconductor lasers. Background technique [0002] In recent years, the semiconductor laser narrow pulse drive circuit has been widely used in optical communication, single photon detection, fiber amplifier seed source, etc. due to its compact structure, high stability, narrow pulse width, high repetition rate, adjustable pulse width and repetition rate, etc. field. Whether it is in the field of optical communication, single photon detection, or fiber amplifier seed source, the smooth waveform, stable central wavelength, high output power, narrow pulse width and other performances of pulsed lasers all depend on the quality of laser pulses emitted by semiconductor lasers. The optical pulse emitted by the semiconductor laser is directly modulated by the electrical pulse generated by the semiconductor laser drive ...

Claims

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Application Information

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IPC IPC(8): H01S5/042
CPCH01S5/042H01S5/0428
Inventor 程文雍王晓倩王军华
Owner SHANDONG UNIV
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